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38 results on '"Saad, Sehmi"'

8. A 270 Hz, Fine Frequency Tuning Class-C Oscillator Using Capacitive--Inductive Degeneration Technique in 130 -nm CMOS

Author

Haddad, Fayrouz., Saad, Sehmi, Haddad, Fayrouz, Hammadi, Aymen Ben, Aix Marseille Université (AMU), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), École Nationale Supérieure d'Ingénieurs de Caen (ENSICAEN), and Normandie Université (NU)

Subjects
Materials science, Oscillator phase noise, business.industry, Transconductance, Capacitive sensing, CMOS, dBc, LC circuit, Class-C oscillator, Voltage-controlled oscillator, Capacitive-Inductive Degeneration Coupling, Phase noise, LC-VCO, Optoelectronics, robust start-up, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

International audience; This paper presents a high-resolution Class-C type voltage-controlled oscillator (VCO) with a robust startup. The proposed oscillator achieves a minimum frequency quantification step of 270 Hz without adding any additional dithering approach. The very fine tuning is obtained through a capacitive-inductive degeneration coupling (CIDC) technique which reduces the capacitance value without appreciably affecting the intrinsic oscillator phase noise (PN). This technique also provides a negative transconductance to compensate for losses in the LC tank, resulting in high oscillation amplitude and relatively low power consumption in the oscillator core. The proposed design, implemented in 130 nm CMOS technology, achieves 45% tuning range. It exhibits a phase noise of-107 dBc/Hz @ 1-MHz offset, while it draws 5.75 mA from a supply of 1.2 V, resulting in a FoM of 165 dBc/Hz.

Published
2021

10. Effect of Multi-Finger Gate MOSFET on RF Analog Integrated Circuit

Author

Haddad, Fayrouz., Haddad, Fayrouz, Hammadi, Aymen Ben, Saad, Sehmi, Aix Marseille Université (AMU), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
Materials science, business.industry, Transistor, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Integrated circuit, Noise figure, law.invention, Band-pass filter, law, MOSFET, Hardware_INTEGRATEDCIRCUITS, RFIC, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, AND gate, ComputingMilieux_MISCELLANEOUS, Voltage
Abstract

Multi-finger gate technique has been extensively used in RF analog circuit design. In addition to its small silicon area, the main advantage of this method is that all parasitic capacitances and gate resistance can be simultaneously reduced. In this work, an active bandpass filter, with and without multi-finger optimization, are presented. Designs of performances are analyzed in detail as a function of number of fingers. The BPF design using multi-finger transistors together with lowering supply voltage can introduce reductions in noise Figure around 25%, and in chip area from 698 to $545 \mu m^{2}$ with a decrease in maximal power consumption about 12%.

Published
2020

12. VHF, UHF Voltage-Controlled Bandpass Filter Employing Tunable Active Inductor

Author

Haddad, Fayrouz., Mhiri, Mongia, Ben Hammadi, Aymen, Haddad, Fayrouz, Saad, Sehmi, Besbes, Kamel, Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), Aix Marseille Université (AMU), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), and HADDAD, Fayrouz

Subjects
Materials science, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Transmission loss, 020208 electrical & electronic engineering, Electrical engineering, 020206 networking & telecommunications, 02 engineering and technology, Inductor, Noise figure, CMOS, Band-pass filter, Ultra high frequency, 0202 electrical engineering, electronic engineering, information engineering, Center frequency, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, Active filter, ComputingMilieux_MISCELLANEOUS
Abstract

In this paper, a voltage-controlled bandpass filter employing tunable active inductor for VHF and UHF applications is presented. In order to provide a systematic approach to the realization of tunable active filters with high selectivity, low power consumption and small chip area, several optimization techniques and reconfiguration methods are adopted in this design. Designed with 0.13μm CMOS technology, the presented BPF prototype occupies a 0.00025 mm2area with pads, draws 2.34/3.45 mA from 1- V voltage supply for an operating center frequency from 145.2 MHz up to 436.2 MHz respectively, and demonstrates 1-dB compression points respectively of 1.23/2.67 dBm. For this tuning, the transmission loss are between −3.52 dB (UHF) and 14.77 dB (VHF) with a minimum noise figure varying respectively from 1.77 up to 1.82 dB.

Published
2018

13. Compact Tunable Bandpass Filter for RF and Microwave Applications

Author

Haddad, Fayrouz., Hammadi, Aymen Ben, Haddad, Fayrouz, Mhiri, Mongia, Saad, Sehmi, Besbes, Kamel, HADDAD, Fayrouz, Aix Marseille Université (AMU), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Faculté des Sciences de Monastir (FSM), Université de Monastir - University of Monastir (UM), and Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)

Subjects
010302 applied physics, Materials science, business.industry, [SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 020208 electrical & electronic engineering, 02 engineering and technology, Noise figure, Inductor, 01 natural sciences, CMOS, Band-pass filter, Filter (video), Q factor, 0103 physical sciences, 0202 electrical engineering, electronic engineering, information engineering, Optoelectronics, Radio frequency, Cascode, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business, ComputingMilieux_MISCELLANEOUS
Abstract

In this paper, a fully CMOS bandpass filter with wide tunable frequency band suitable for radiofrequency (RF) and microwave applications is presented. The circuit has been realized in 130 nm CMOS technology using differential cascode grounded active inductor in place of spiral inductors, significantly improving the overall performances of the filter. The proposed design achieves a tuning range about 300% around 2 GHz indicating a very high slope factor. The filter draws between 3.68 and 6.44 mW from 1 V power supply, while attaining a maximum voltage gain of 33.45 dB at 1.84 GHz, a quality factor of 76.66 and a noise figure of 14.93 dB. It achieves a 1-dB compression point of −1.5 dBm and a surface area of only $(427\text{x}576)\mu \text{m}^{2}$.

Published
2018

16. An Ultra-Compact Multi-Band VCO Achieving − 196 dB FoMAwith Single-Ended Tunable Active Inductor

Author

Saad, Sehmi and Ben Hammadi, Aymen

Abstract

This paper presents a wide tuning-range LC-tank voltage controlled oscillator (VCO). To perform large frequency tuning range, the proposed circuit topology uses a tunable active inductor (TAI) for the coarse frequency tuning, while the fine-tuning is controlled only by a MOS varactor. The TAI design is based on toggling varactor arrays by which four channels are able to be selected for multi-band applications. The proposed VCO is designed in 90-nm CMOS process. Simulation results show that the VCO can operate from 760 MHz to 4.370 GHz representing an FTR of 140.74%, with a tuning gain Kvcofrom 654 to 1882 MHz/V. The achieved phase noise is lower than − 105 dBc/Hz at an offset frequency of 1 MHz from the carrier tuned to 2.52 GHz. The VCO core circuit draws 3.3 mA from a 1V voltage supply and occupies a small active area of (45 × 37) μm2. The fully implemented VCO provides excellent performances such as attractive FOMAvalue of − 196 dBc/Hz.

Published
2021
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33. An Enhanced Design of Multi-Band RF Band Pass Filter Based on Tunable High-Q Active Inductor for Nano-Satellite Applications.

Author

Hammadi, Aymen Ben, Mhiri, Mongia, Haddad, Fayrouz, Saad, Sehmi, and Besbes, Kamel

Subjects
RADIO frequency, NANOSATELLITES, ELECTRIC inductors, P-type semiconductors, METAL oxide semiconductors, COMPUTER simulation
Abstract

This paper describes the design of a novel cascode-grounded tunable active inductor and its application in an active band-pass filter (BPF) suitable for multi-band radio frequency (RF) front-end circuits. The proposed active inductor circuit uses feedback resistance to improve the equivalent inductance and the quality factor. The novelty of this work lies on the use of a few number of multi-finger transistors, which allows reducing strongly the power consumption and the silicon area. In other words, we demonstrate that the use of variable P-type Metal-Oxide-Semiconductor (PMOS) resistor and controllable current source have a good potential for wide tuning in terms of inductance value, quality factor and frequency operation. The RF BPF is realized using the proposed active inductor with suitable input and output buffer stages. The tuning of the center frequency for multi-band operation is achieved through control voltages. The designed active inductor and RF BPF have been implemented in a standard 0.13m Complementary Metal Oxide Semiconductor (CMOS) technology. The simulation results are compared between schematic and post-layout design for inductance value, quality factor, transmission coefficient S21 and noise. This design yields encouraging results: the inductance value can be tuned from 10.94 to 44.17nH with an optimal quality factor around 2,581. In addition, the center frequency of the BPF can be tuned between 2 and 4.84GHz with an average insertion loss of dB. Throughout this range, the noise figure is between 10.49 and 9.22dB with an input referred 1dB compression point of dBm and IIP3 of 7.36dBm. The filter occupies 25.43m of active area without pads and consumes between 2.38 and 2.84mW from a 1V supplying voltage. [ABSTRACT FROM AUTHOR]

Published
2017
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36. A New Low-power, High- Q , Wide Tunable CMOS Active Inductor for RF Applications.

Author

Saad, Sehmi, Mhiri, Mongia, Hammadi, Aymen Ben, and Besbes, Kamel

Subjects
*COMPLEMENTARY metal oxide semiconductors, *ELECTRIC inductors, *GYRATORS
Abstract

This paper presents a new topology for realizing a single-ended inductor employing a minimum number of passive components. The active inductor achieves a high quality factor of 895 over a frequency range of 1700 MHz. Its self-resonance frequency is 5.5 GHz. The achieved range of sweep for inductance (L) varies from 3.55 to 26 nH. The circuit draws 0.5 mA current from 1.0-V supply and occupies an effective active area of 22 × 27.5 µm2, while the noise voltage is less than. The proposed inductor is designed and simulated in a 90-nm TSMC MS/RF CMOS process. [ABSTRACT FROM AUTHOR]

Published
2016
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