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8. CVD Grown Single Crystal Diamond: A Review

Author

Arnault, Jean-Charles, Saada, Samuel, Ralchenko, V., Laboratoire Edifices Nanométriques (LEDNA), Nanosciences et Innovation pour les Matériaux, la Biomédecine et l'Energie (ex SIS2M) (NIMBE UMR 3685), Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC), Laboratoire Capteurs Diamant (LCD-LIST), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, A. M. Prokhorov General Physics Institute (GPI), Russian Academy of Sciences [Moscow] (RAS), Harbin Institute of Technology (HIT), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut Rayonnement Matière de Saclay (IRAMIS), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA))

Subjects
diamond, chemical vapor deposition (CVD), homoepitaxy, Applications, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], single crystal diamond, Thin film, State of the art, heteroepitaxy
Abstract

International audience; With its outstanding physical properties, single crystal diamond is the material of choice for future power electronics and quantum devices. The later application field is based on the optical and spin properties of color centers hosted in diamond lattice. Two synthesis methods are currently developed to grow high quality diamond: high pressure and high temperature (HPHT) synthesis and chemical vapor deposition (CVD). This review describes the state of the art of single crystal diamond growth by CVD, either starting with diamond substrate (homoepitaxy) or controlling diamond epitaxial nucleation on a foreign substrate (heteroepitaxy). Progress on substrates, dislocation propagation and reduction of structural defects, doping, upscaling and applications are reviewed. In light of recent progress, future challenges and the respective roles of homoepitaxial and heteroepitaxial materials in the applications roadmap are discussed.

Published
2021
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9. Chemical Vapor Deposition Single‐Crystal Diamond: A Review.

Author

Arnault, Jean-Charles, Saada, Samuel, and Ralchenko, Victor

Subjects
*CHEMICAL vapor deposition, *DIAMOND crystals, *QUANTUM electronics, *DIAMONDS, *POWER electronics, *CHEMICAL synthesis
Abstract

With its outstanding physical properties, single‐crystal diamond is the material of choice for future power electronics and quantum devices. The later application field is based on the optical and spin properties of color centers hosted in diamond lattice. Two synthesis methods are currently developed to grow high‐quality diamond: high pressure and high temperature (HPHT) synthesis and chemical vapor deposition (CVD). Herein, the state of the art of single‐crystal diamond growth by CVD, either starting with diamond substrate (homoepitaxy) or controlling diamond epitaxial nucleation on a foreign substrate (heteroepitaxy) is described. Progress on substrates, dislocation propagation, and reduction of structural defects, doping, upscaling, and applications are reviewed. In light of recent progress, future challenges and the respective roles of homoepitaxial and heteroepitaxial materials in the applications roadmap are discussed. [ABSTRACT FROM AUTHOR]

Published
2022
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13. Nucleation of heteroepitaxial diamond films: toward in situ characterization of domain formation

Author

Delchevalrie, Julien, Saint-Girons, Guillaume, Bachelet, Romain, Saada, Samuel, Arnault, Jean-Charles, Saint-Girons, Guillaume, Substrats de diamant conducteur pour des applications industrielles en électronique de puissance - - DIAMWAFEL2015 - ANR-15-CE08-0034 - AAPG2015 - VALID, Laboratoire Capteurs Diamant (LCD-LIST), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, INL - Hétéroepitaxie et Nanostructures (INL - H&N), Institut des Nanotechnologies de Lyon (INL), Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Université de Lyon-Institut National des Sciences Appliquées (INSA)-École Centrale de Lyon (ECL), Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE)-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-École supérieure de Chimie Physique Electronique de Lyon (CPE), ANR-15-CE08-0034,DIAMWAFEL,Substrats de diamant conducteur pour des applications industrielles en électronique de puissance(2015), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), and Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)

Subjects
instrumentation, Etching, nucleation, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], monocrystalline diamond, Heteroepitaxial diamond, iridium, film, diamond detector, Bias Enhanced Nucleation (BEN), [PHYS.COND.CM-MS] Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Abstract

International audience; Unique properties of monocrystalline diamond make it a highly used material for power electronics or detectors applications. One of the major issues remains the upscaling of monocrystalline substrates limited to a few mm². Heteroepitaxial diamond appears to be a credible alternative [1]. However, the crystalline quality of heteroepitaxial diamond films is still lower than monocrystalline substrates.The key step is the Bias Enhanced Nucleation (BEN) during which “domains” are created [2]. During BEN, a kinetic occurs associated to nucleation and 2D growth of domains coupled with an iridium roughening. Nucleation mechanisms implied are not fully understood [3]. In some conditions, domains evolves toward diamond foam [4]. An in situ characterization would be beneficial to identify the mechanisms and to control the diamond/iridium interface.We succeeded in getting an in situ signature of the beginning of diamond foam formation by laser reflectometry. However, this technique was unsensitive to domains formation. We investigated here the Ellipsometric Spectroscopy (ES) which is a promising technique because of its sensitivity to optical properties and surface roughness. To first make ex situ ES analysis, we analyzed the morphology, the roughness and the surface chemistry by combined measurements done before and after BEN: FE-SEM on the same area of the substrate, AFM and XPS. This allowed us to create an ES model of domains which reports on the influence of domains and/or the iridium roughening. To decouple their influence in ex situ ES analysis, we succeeded to develop an etching technique to selectively remove domains without changing the iridium morphology.Such ES characterization could be further implemented for in situ nucleation monitoring.Acknowledgments to ANR & DGA for funding DIAMWAFEL (ANR-15-CE08-0034).[1] Schreck, MRS Bulletin, 2014, 39, 504-510[2] Vaissiere, DRM, 2013, 36, 16-25[3] Schreck, Scientific Reports, 2017, 7, 44462[4] Vaissière, DRM, 2016, 68, 23-27

Published
2019

17. Improved electronic properties of p-epitaxial layers grown on HPHT (100) substrates after a surface pretreatment

Author

Barbay, Cyrille, Mer-Calfati, Christine, Tranchant, Nicolas, Saada, Samuel, Arnault, Jean-Charles, Stenger, Ingrid, Zuerbig, Verena, Lang, N., Kirste, Lutz, Oyelami, Oluwasayo, Eon, David, Laboratoire Capteurs Diamant (LCD-LIST), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Fraunhofer Institute for Applied Solid State Physics (Fraunhofer IAF), Fraunhofer (Fraunhofer-Gesellschaft), Institut Néel (NEEL), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Hasselt university, and European Project: 640947,H2020,H2020-LCE-2014-1,GreenDiamond(2015)

Subjects
mechanical polishing, diamond, surface roughness, surface pretreatment, etching, boron doping, Thin film, [CHIM.MATE]Chemical Sciences/Material chemistry, crystalline quality, Chemical Vapor Deposition (CVD), dislocations
Abstract

Single-crystal diamond synthesis of high crystaliine quality remains de challenge for power electronic devices. Reaching very smooth substrate surface before Chemical Vapour Deposition (CVD) growth is primordial to better control the crystalline quality of diamond epitaxial layers. We investigaed the effect of Ar/O2 etching on substrates by optimizing the RF-power, the pressure and the O2 content in regard to the etching rate and RMS roughness. Pretreatment efficiency was evaluated by the enhancement of crystalline quality using Raman spectroscopy and High-Resolution X-ray Diffraction.

Published
2018

18. scCVD Diamond Membrane based Microdosimeter for Hadron Therapy

Author

Zahradnik, Izabella A., primary, Pomorski, Michal T., additional, De Marzi, Ludovic, additional, Tromson, Dominique, additional, Barberet, Philippe, additional, Skukan, Natko, additional, Bergonzo, Philippe, additional, Devès, Guillaume, additional, Herault, Joël, additional, Kada, Wataru, additional, Pourcher, Thierry, additional, and Saada, Samuel, additional

Published
2018
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19. Enhanced thermal performances of silicon-on-diamond wafers incorporating ultrathin nanocrystalline diamond and silicon layers: Raman and micro-Raman analysis.

Author

Mazellier, Jean-Paul, Mermoux, Michel, Andrieu, Francois, Widiez, Julie, Dechamp, Jérôme, Saada, Samuel, Lions, Mathieu, Hasegawa, Masataka, Tsugawa, Kazuo, Bergonzo, Philippe, and Faynot, Olivier

Subjects
SEMICONDUCTOR wafers, THIN film research, RAMAN spectroscopy, SCANNING electron microscopy, TRANSMISSION electron microscopy
Abstract

Silicon-on-diamond (SOD) wafers potentially present thermal advantages over standard silicon-on-insulator (SOI) counterparts based on SiO2 as the buried insulating layer. This work reports the fabrication of high quality SOD wafers by the bond and etch back SOI process. One key parameter in the CVD diamond growth process is the substrate temperature. We focused here on two processes based on either high or low processing temperature to produce nanocrystalline diamond (NCD) on silicon. Both type of NCD films have been analyzed via Raman spectroscopy. Results have been correlated with scanning electron microscopy observations. In a second part, SOD wafers are fabricated and the crystalline quality of the active silicon layer is assessed via Raman measurements and high resolution transmission electron microscopy imaging. It is shown that the growth of diamond did not induce any structural defect or strain in the thin top silicon layer. Eventually, we demonstrate the efficiency of diamond integration thanks to micro-Raman spectroscopy, where the probing laser simultaneously generates Raman signal and controlled local heating. Our SOD wafers evidence a thermal resistance reduction of about 70% compared to conventional SOI materials, with heat source spatial extension in the micron range. [ABSTRACT FROM AUTHOR]

Published
2011
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20. Single α-particle irradiation permits real-time visualization of RNF8 accumulation at DNA damaged sites

Author

Muggiolu, Giovanna, Pomorski, Michal, Claverie, Gérard, Berthet, Guillaume, Mer-Calfati, Christine, Saada, Samuel, Devès, Guillaume, Simon, Marina, Seznec, Hervé, Barberet, Philippe, Centre d'Etudes Nucléaires de Bordeaux Gradignan (CENBG), Université Sciences et Technologies - Bordeaux 1 (UB)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Capteurs Diamant (LCD-LIST), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay

Subjects
instrumentation, radiation-induced damage, Recombinant Fusion Proteins, Ubiquitin-Protein Ligases, Membranes, Artificial, Alpha Particles, Time-Lapse Imaging, alpha-rays, Article, DNA-Binding Proteins, Histones, diamond, Genes, Reporter, radioactivity, Cell Line, Tumor, [PHYS.PHYS.PHYS-MED-PH]Physics [physics]/Physics [physics]/Medical Physics [physics.med-ph], nano-crystalline diamond, Humans, boron doping, [PHYS.PHYS.PHYS-INS-DET]Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det], ionizing radiation, nuclear instrumentation, radiotherapy, DNA Damage
Abstract

International audience; As well as being a significant source of environmental radiation exposure, α-particles are increasingly considered for use in targeted radiation therapy. A better understanding of α-particle induced damage at the DNA scale can be achieved by following their tracks in real-time in targeted living cells. Focused α-particle microbeams can facilitate this but, due to their low energy (up to a few MeV) and limited range, α-particles detection, delivery, and follow-up observations of radiation-induced damage remain difficult. In this study, we developed a thin Boron-doped Nano-Crystalline Diamond membrane that allows reliable single α-particles detection and single cell irradiation with negligible beam scattering. The radiation-induced responses of single 3 MeV α-particles delivered with focused microbeam are visualized in situ over thirty minutes after irradiation by the accumulation of the GFP-tagged RNF8 protein at DNA damaged sites.

Published
2017
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25. Single crystal CVD diamond membranes for betavoltaic cell

Author

Delfaure, Colin, Pomorski, Michal, de Sanoit, Jacques, Bergonzo, Philippe, and Saada, Samuel

Subjects
Diamond, Betavoltaïc, nuclear battery, membranes, detector
Abstract

A single crystal diamond large area thin membrane was assembled as a p-doped/Intrinsic/Metal (PIM) structure and used in a betavoltaic configuration. When tested with a 20 keV electron beam from a high resolution scanning electron microscope, we measured an open circuit voltage (Voc) of 1.85 V, a charge collection efficiency (CCE) of 98%, a fill-factor of 80%, and a total conversion efficiency of 9.4%. These parameters are inherently linked to the diamond membrane PIM structure that allows full device depletion even at 0 V and are among the highest reported up to now for any other material tested for betavoltaic devices. It enables to drive a high short-circuit current Isc up to 7.12 μA, to reach a maximum power Pmax of 10.48 μW, a remarkable value demonstrating the high-benefit of diamond for the realization of long-life radioisotope based micro-batteries.

Published
2015
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30. Sequential analysis of diamond nucleation on silicon (001) with bias enhanced nucleation using X-ray photoelectron spectroscopy and reflection high energy electron diffraction investigations

Author

Sarrieu, C., Barth, N., Guise, A., Arnault, Jean-Charles, Saada, Samuel, Barrat, S., Bauer-Grosse, E., Scalian [Rennes], Laboratoire des sciences de l'ingénieur, de l'informatique et de l'imagerie (ICube), École Nationale du Génie de l'Eau et de l'Environnement de Strasbourg (ENGEES)-Université de Strasbourg (UNISTRA)-Institut National des Sciences Appliquées - Strasbourg (INSA Strasbourg), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-Matériaux et nanosciences d'Alsace (FMNGE), Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Institut National de la Santé et de la Recherche Médicale (INSERM)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Réseau nanophotonique et optique, Université de Strasbourg (UNISTRA)-Université de Haute-Alsace (UHA) Mulhouse - Colmar (Université de Haute-Alsace (UHA))-Centre National de la Recherche Scientifique (CNRS)-Université de Strasbourg (UNISTRA)-Centre National de la Recherche Scientifique (CNRS), Boostec, MERSEN, Laboratoire d'aérologie (LAERO), Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Observatoire Midi-Pyrénées (OMP), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Institut de Recherche pour le Développement (IRD)-Institut national des sciences de l'Univers (INSU - CNRS)-Centre National d'Études Spatiales [Toulouse] (CNES)-Centre National de la Recherche Scientifique (CNRS)-Météo-France -Centre National de la Recherche Scientifique (CNRS), Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie du CNRS (INC)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Laboratoire Capteurs Diamant (LCD-LIST), Département Métrologie Instrumentation & Information (DM2I), Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay-Laboratoire d'Intégration des Systèmes et des Technologies (LIST (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay

Subjects
diamond, reflection high-energy electron diffraction (RHEED), [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], bias enhanced nucleation (BEN), [CHIM]Chemical Sciences, X-ray photoelectron spectroscopy (XPS), amorphous carbon, crystalline silicon carbide, diamond nucleation density, Chemical Vapor Deposition (CVD), heteroepitaxy
Abstract

International audience; Diamond synthesis by microwave plasma assisted chemical vapour deposition (MPCVD) with a bias enhanced nucleation (BEN) step constitutes the most efficient method to obtain heteroepitaxy and is also useful to reach high nucleation densities. In this study, sequential reflection high-energy electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS) investigations enabled us to highlight the formation of amorphous carbon and crystalline silicon carbide on the surface before diamond growth. By varying the bias voltage, we underlined an optimized value corresponding to a higher quantity of amorphous carbon. This quantity is strongly correlated to the diamond nucleation density. As for the quality of the SiC texture, this seems to be directly linked to bias voltage too: low bias voltages enable us to obtain high oriented 3C-SiC whereas high bias voltages lead to a completely misoriented polycrystalline SiC film.

Published
2009
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33. Fabrication of a 3 GHz oscillator based on nano-carbon-diamond-film-based guided wave resonators

Author

Salut, Roland, primary, Gesset, Celine, additional, Martin, Gilles, additional, Saada, Samuel, additional, Assouar, Badreddine, additional, Bergonzo, Philippe, additional, Boudot, Rodolphe, additional, Benedic, Fabien, additional, Elmazria, Omar, additional, Omnes, Franck, additional, Remiens, Demis, additional, and Ballandras, Sylvain, additional

Published
2010
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34. Fabrication of GHz range oscillators stabilized by nano-carbon-diamond-based surface acoustic wave resonators

Author

Salut, Roland, primary, Ballandras, Sylvamn, additional, Gesset, Celine, additional, Saada, Samuel, additional, Bergonzo, Philippe, additional, Yantchev, Ventsislav, additional, Kartadjiev, Ilia, additional, Assouar, Badreddine, additional, Elmazria, Omar, additional, Benedic, Fabien, additional, Omnes, Frank, additional, Edon, Vincent, additional, and Remiens, Denis, additional

Published
2009
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39. Local Structure of Nanocrystalline Diamond - Evolution with Thermal Treatments

Author

Ballutaud, Dominique, Pinault, Amandine, Lusson, Alain, Vigneron, Jacky, and Saada, Samuel

Abstract

The modifications of the sp2 carbon phases in CVD nanocrystalline diamond with 25 nm grain size are analysed by ultra-violet source Raman spectroscopy, Fourier transformed infra-red spectroscopy (FTIR) and and X-ray photoelectron spectroscopy (XPS), according to different thermal annealing treatments. Hydrogen concentration is measured by secondary ion mass spectrometry. The hydrogen outdiffusion of the sample as a function of temperature is recorded by mass spectrometry. The Raman spectra show evolution of the signal of the two G and D bands at 1360 and 1530 cm-1 related to more or less disordered sp2 phases, and of the 1150 cm-1 peak attributed to acetylenic chains located at grain boundaries. Thermal annealing breaks the short distance order in sp2 phases. FTIR and XPS analysis show that the sp2 CHx bonds are the less stable and that the superficial sp3 diamond carbon bonds recover as a result of the hydrogen departure.

Published
2009

40. Single $\alpha$-particle irradiation permits real-time visualization of RNF8 accumulation at DNA damaged sites

Author

Muggiolu, Giovanna, Pomorski, Michal, Claverie, Gérard, Berthet, Guillaume, Mer-Calfati, Christine, Saada, Samuel, Devès Guillaume, Simon, Marina, Seznec, Hervé, Barberet, Philippe, Centre d'Etudes Nucléaires de Bordeaux Gradignan (CENBG), Université Sciences et Technologies - Bordeaux 1-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Laboratoire d'Intégration des Systèmes et des Technologies (LIST), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Paris-Saclay, and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)

Subjects
[PHYS]Physics [physics]
Abstract

International audience; As well as being a significant source of environmental radiation exposure, α-particles are increasinglyconsidered for use in targeted radiation therapy. A better understanding of α-particle induced damageat the DNA scale can be achieved by following their tracks in real-time in targeted living cells. Focusedα-particle microbeams can facilitate this but, due to their low energy (up to a few MeV) and limitedrange, α-particles detection, delivery, and follow-up observations of radiation-induced damage remaindifficult. In this study, we developed a thin Boron-doped Nano-Crystalline Diamond membrane thatallows reliable single α-particles detection and single cell irradiation with negligible beam scattering.The radiation-induced responses of single 3MeV α-particles delivered with focused microbeam arevisualized in situ over thirty minutes after irradiation by the accumulation of the GFP-tagged RNF8protein at DNA damaged sites.

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