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Background: Pecha Kucha presentation is the new promising approach to student learning in the classroom that improve students’ student speaking skills, motivates the learning process, increases creativity, and enhances student engagement in learning. Pecha Kucha presentation originated from the Japanese word “chit chat” which represents a fast-paced presentation used in different discipline. It involves 20 slides, each shown in 20 seconds making a total of 6 minutes and 40 seconds. The study will assess the role of Pecha Kucha presentation on presentation preparation knowledge, presentation skills and learning satisfaction among nursing students in Tanzania. Methods: The study proposes to employ uncontrolled quasi experimental study design with quantitative approach among 230 nursing students at University of Dodoma using purposeful and stratified sampling techniques. The study proposes to use the interviewer administered questionnaire to assess study variables when using Pecha Kucha presentation format to prepare and present their assignments of project works. The study will involve training of research assistants, pre-assessment of study variables, training and demonstration of Pecha Kucha presentations format to study participants, assigning topic to the study participants, submission and evaluation of participants assignments, participants presentations using Pecha Kucha format, post-intervention assessment of variables, data analysis using SPSS version 25 and reporting Discussion: This study will address and complement the global need to invest in nursing to prepare competent nurses and midwives to solve complex health challenges through critical thinking, analysis, collaboration, and effective communication. Also, the study will address the need for WHO to increase the number of nurses and midwives with knowledge and skills to handle global economic and primary health care challenges, by ensuring all people have equal opportunity and access to health care. The study will inform policy makers, health training institutions, educators on new engaging and innovative nursing student presentation approach that enhance student creativity, critical thinking skills and consequently meaningful learning which are good indicators of learning while equipping them with survival and life skills in the 21st century to meeting the global economy and job opportunities. Trial registration: Not applicable as this is not a trial

Isocitrate dehydrogenase 1 and 2 (IDH1 and IDH2) are key metabolic enzymes that convert isocitrate to alpha-ketoglutarate (alphaKG). Somatic point mutations in IDH1/2 that are found in rare distinct subsets of cancers confer a gain of function in cancer cells which results in the accumulation and secretion in vast excess of the oncometabolite D-2-hydroxyglutarate (D-2HG). Overproduction of D-2HG interferes with cellular metabolism and epigenetic regulation, contributing to oncogenesis. High levels of D-2HG inhibit alphaKG-dependent dioxygenases including histone, DNA and RNA demethylases, resulting in histone, DNA and RNA hypermethylation and cell differentiation blockade. In addition, D-2HG is a biomarker suitable for the detection of IDH1/2 mutations at diagnosis, and is also predictive of clinical response. The U.S. Food and Drug Administration (FDA) approved ivosidenib, a mutant-IDH1 enzyme inhibitor, for patients with relapsed or refractory IDH1-mutated acute myeloid leukemia (AML) in 2018, and also as front-line therapy for newly diagnosed elderly patients 75 years or older or who are ineligible to receive intensive chemotherapy in 2019. Ivosidenib represents a novel drug class for targeted therapy in AML.

Presentation at the IEEE International Microwave Symposium. TechnicalSession 203AB, Presented by Dr A. Pothier,June 12th 2018,Philadelphia, USA.

Presentation at IEEE IMBioC conference. Technical Session 201C. Presented by Dr A. Pothier.Philadelphia, USA, June 15th 2018.

International audience; One of the major reproach for diamond power device in comparison with other semiconductor materials is the substrate size. For example, for High Pressure High Temperature (HPHT) substrate used to create power devices, the size is currently 4x4mm2, which is far away from the silicon technology (wafer of 450mm). One way to overcome this issue is to use heteroepitaxial diamond substrates. Some similar works have already been done by different groups around the world [1], [2]. The French consortium DIAMWAFEL is actively working on diamond heteroepitaxial films grown onto Ir/SrTiO3/Si(001) substrates [3]. The crystalline quality reported for this heteroepitaxial material is at the state of the art [4]. Nevertheless, an electrical characterization is needed to check if this material is suitable for power device application. To do so, we firstly grew a slightly doped p-type layer (1016 atoms.cm-3) on the as received substrate to obtain an active layer on top of the thick intrinsic layer already grown. After that, Schottky and ohmic contacts have been deposited. The purpose of this study is to electrically characterize this new material by using the lateral Schottky diodes created. In that matter, we performed some current-voltage (I-V) measurements under different condition as well as capacity-voltage (C-V) ones an example is shown in figure 1 b). Those results will be presented and discussed in this work.

Dogal ürünlerin antioksidan aktivitelerinin çalışılması bu yapıları serbest radikaller ve onların etkilerine karşı yüksek koruma özelliklerinden dolayı avantajdır. Bu çalışmada Stachys cretica bitkisinin yaprakları fenolic ve flavonoid içerik açısından incelenmiş, anti oksidan enzimler üzerine etkisi araştırılmıştır. Kolon kromatagrafisi ve ince tabaka kromatografileri kullanılarak fraksiyon ayrıştırması yapılmıştır. Anti oksian enzim çalışmaları için Glutatyon-S-transferaz, süperoksit dismutaz ve katalaz enzimleri kullanılmıştır. Bitki özleri, metanol yöntemleriyle hazırlanmıştır. Fraksiyonların toplam fenolik ve flavonoid içeriği açısından karşılaştırılmış, en yüksek toplam fenolik bileşi içeren fraksiyon enzim analizlerinde kullanılmıştır..Glutatiyon-S-transferaz (GST) enzimi üzerine bitki yapraklarının inhibitör etkisi % 100 olarak bulunmuş ve bu enzim için IC50 değeri2.639 g / L olarak hesaplanmıştır.Bitki yapraklarının superoksit dismutaz (SOD) ve Katalaz enzimleri üzerine inhibitör etkisi sırsıyla % 80 ve % 90 dan az olarak bulunmuş yine bu enzimlere ait , yarım maksimum inhibisyon konsantrasyon değeri IC50 degerleri SOD için 0.7230 g / L iken katalaz için 0.1474g/L olarak hesaplanmıştır. The advantage of studying antioxidant activity of natural products is they have high protection of body from free radicals and their effects. In this study the antioxidant effect of stachys cretica plant leaves extract was analyzed due to their total phenolic and flavonoid contents, and their effects on antioxidant systems.The chromatographic techniques such as column chromatography (CC) and thin layer chromatography (TLC) were also used. By measuring the effect of plant on the activity of the antioxidant system; glutathione-S-transferase, superoxide dismutase and catalase enzymes are used.The plant extracts were prepared by methanol extraction. The total phenolic and flavonoid contents of the fractions were compared; the fraction with highest total phenolic compounds was used for further analyses.The inhibitory effects of leaves of plant on Glutathione-S-transferase (GST) was 100% with half maximal inhibitory concentration value IC50 of 2.639g/L and superoxide dismutase (SOD) activities were 80% with IC50 of 0.7230g/L and the inhibitory effect of catalase enzyme was less than 90%with IC50 of 0.1474g/L. 3855

International audience; The up-scaling of heteroepitaxial diamond remains one challenge for the development of power electronics. One option is to consider heterosubstrates compatible with silicon based technologies, such as Ir / YSZ / Si [1]. We have developed diamond heteroepitaxy on iridium buffer layers grown on SrTiO3 / Si (001) [2]. The SrTiO3 has a low lattice mismatch with Ir (1.7 %) whereas the silicon substrate ensures a closer thermal expansion mismatch with diamond.This study provides an extended characterization of the heteroepitaxial process on SrTiO3 / Si (001): from the iridium deposition, to the bias enhanced nucleation (BEN) and the growth of heteroepitaxial diamond films (200 nm up to 240 m thick).High quality iridium buffer layers were grown on SrTiO3 / Si (001) with mosaicities of 0.3° (polar) and 0.1° (azimuthal) according to XRD. After the BEN step, the surface and the interfaces of Ir / SrTiO3 / Si (001) multilayer were investigated by SEM and HRTEM in cross-section. The morphology and the crystalline quality of a 200 nm thick heteroepitaxial diamond film were characterized using SEM and UV Raman. A cross-section of this film was investigated by High Resolution TEM. Thicker diamond films were grown under MPCVD growth conditions close to homoepitaxy [3]. Structural and chemical characterizations of diamond heteroepitaxial films grown on Ir / SrTiO3 / Si (001) were performed by XRD, Raman and Cathodoluminescence. The obtained results demonstrate the potential of Ir / SrTiO3 / Si (001) to achieve heteroepitaxial diamond films with characteristics at the state-of-the-art. The up-scaling has already proved successful allowing the substrate size to be increased from 5x5 to 7x7 mm2. References[1] M. Schreck et al., MRS Bulletin 39 (2014) 504 [2] K. H. Lee et al., Diam. Relat. Mater. 66 (2016) 67.[3] J. Achard et al., J. Phys. D, 40 (2007) 6175

International audience; Heteroepitaxial diamond grown on iridium buffer layer has been proven to have a promising potential for diamond based electronic devices [1,2] and sensors. Heteroepitaxy has the potential to unlock the path towards large-area single-crystal diamond substrates. The use of thin SrTiO3 films epitaxially grown on silicon is a great alternative for up-scaling [3]. The understanding of the effect of different parameters of the BEN (Bias Enhanced Nucleation) process is crucial for future single-crystal diamond up-scaling.Several nanometers thick (30-40nm) SrTiO3 films deposited by MBE on silicon (001) has been used as substrates. High quality iridium layers with a thickness of 100-200nm were grown on these 5x5mm2SrTiO3/Si multi-layer substrates by e-beam evaporation (M-EV) at 700°C [4]. The FWHM of the rocking curve (ω) and the azimuthal curve (ϕ) of the iridium film measured by XRD were 0.33° and 0.09° respectively.Effects of different BEN parameters, such as the bias voltage (-270V to -307V), the mole fraction of methane (2% to 6%), the microwave power (400W to 550W) and the pressure (15mbar to 25mbar) were studied while other parameters are kept identical. On iridium, diamond nuclei are formed during BEN in localized areas called domains [5]. The variation of BEN parameters led to the formation of domains with different homogeneity, surface coverage and shape, The surface coverage of the domains on iridium has been calculated by image analysis considering several hundreds of HRSEM (Scanning Electronic Microscope) images. The highest coverage of the domains obtained during this study was 98% and it was obtained with 4% of CH4 at 20mbar and a microwave power of 500W by applying a bias voltage of -290V. A 260nm thick, homogeneous and covering diamond film template was grown on this sample for XRD and Raman analysis.[1] D. Takeuchi, et al., Free exciton luminescence from a diamond p–i–n diode grown on a substrate produced by heteroepitaxy, Phys. Status Solidi A, 211, No. 10, 2251-2256, 2014[2] H. Kawashima, et al., Electronic properties of diamond Schottky barrier diodes fabricated on silicon-based heteroepitaxially grown diamond substrates, Applied Physics Express, 8, 104103, 2015[3] T. Bauer, et al., Growth of epitaxial diamond on silicon via iridium/SrTiO3 buffer layers, Diamond & Related Materials, 14, 314-317, 2005[4] K.H. Lee, et al., Ir / SrTiO3 / Si multilayers: A promising substrate for diamond heteroepitaxy, International Conference on Diamond and Carbon Materials, YSA 1, 6-10 Sept. 2015[5]N. Vaissière et al., Diamond and Related Materials, 36, 16-25, 2013

International audience; The HIRIS project funded by the French research agency aims to develop heteroepitaxial diamond on iridium buffer layers grown on SrTiO3 / Si (001) substrates elaborated by MBE [1]. Indeed, this substrate is promising due to its compatibility with silicon based technologies and it allows up-scaling. Four French groups are involved in this project.A first step consisted in the determination of proper conditions to get epitaxial iridium layers on SrTiO3 / Si (001) substrates. The thermal stability of SrTiO3 overlayers with different thicknesses (between 12 and 40 nm) was investigated by SEM and spectroscopic ellipsometry. This study showed that SrTiO3 layers should be thicker than 30 nm to avoid degradation during iridium deposition. The crystalline quality of SrTiO3 layers grown on Si (001) was improved by optimization of MBE conditions. The best parameters for iridium deposition were determined and high quality iridium buffer layers were grown on SrTiO3 / Si (001) substrates with mosaicity of 0.3° (polar) and 0.1° (azimuthal) measured by XRD. The bias enhanced nucleation (BEN) process which consists in applying a voltage between the CH4/H2 plasma and the sample is up to now the most efficient nucleation technique to obtain diamond heteroepitaxy [2]. BEN was previously applied to Ir buffer layers deposited on bulk SrTiO3 (001) substrates [3]. BEN conditions were successfully tuned to obtain a homogeneous nucleation on 5x5 mm2 Ir / SrTiO3 / Si (001) multilayers [4]. Thin diamond films (i. e. templates) were grown by microwave plasma CVD directly after BEN. These templates were characterized using UV Raman and SEM. A cross-section of a template grown on Ir / SrTiO3 / Si (001) was investigated by High Resolution TEM. The size of diamond templates was recently up-scaled to 7x7 mm2. A thickening of templates was performed under dense MPCVD plasma with growth conditions close to homoepitaxy [5]. Diamond heteroepitaxial films grown on Ir / SrTiO3 / Si (001) were then characterized by XRD, Raman and Cathodoluminescence [6]. The work performed during the HIRIS project well demonstrates the potential of Ir / SrTiO3 / Si (001) substrates to achieve the up-scaling of heteroepitaxial diamond wafers.References[1] G. Niu et al., Appl. Phys. Lett. 95 (2009) 062902.[2] M. Schreck et al., MRS Bulletin 39 (2014) 504-510. [3] N. Vaissière et al., Diam. Relat. Mater. 36 (2013) 16-25.[4] K. H. Lee et al. (to be submitted)[5] J. Achard et al, J. Phys. D, 40 (2007) 6175-6188[6] H. Bensalah et al. (to be submitted)

The present paper aims to provide a better insight to the dielectric charging phenomena of nano-crystalline diamond (NCD) films that are used in RF MEMS capacitive switches. The electrical properties of NCD films of various thicknesses are investigated with the aid of metal-insulator-metal (MIM) capacitors. The dominant conduction mechanisms have been identified by obtaining current-voltage characteristics in the temperature range from 300 K to 400 K and dielectric charging phenomena have been investigated by using thermally stimulated depolarization currents (TSDC) technique. The experimental results indicate a thermally activated conductivity for low electric field intensities while Hill-type conduction takes place for field intensities > 130 kV/cm. The conductivity as well as the defect density seems to increase with film thickness. Enhanced dielectric charging phenomena have been observed on thicker films and the injected charges are found to be trapped through the material's volume. These results indicate that thinner NCD films seem to be more promising for RF MEMS capacitive switches. © 2016 Elsevier Ltd

This paper presents the electrical assessment and modeling of the discharge process in RF MEMS capacitive switches with nanocrystalline diamond dielectric film. The assessment is performed by taking into account the detailed dc electrical characterization of the dielectric film at different temperatures with the aid of metal-insulator-metal (MIM) capacitors fabricated on the same die. The model assumes screening of trapped charges through carriers that are injected from the bottom electrode, transported through grain boundaries and redistributed across the diamond film surface through the sp2 state of non-diamond carbon. Simulated data and experimental results are found to be in excellent agreement, clearly indicating that nanocrystalline diamond can be considered as a MEMS dielectric with predictable discharging process. © 2014 IOP Publishing Ltd.