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We report on the study of electron transport and band offset across β -Ga 2 O 3 /4H-SiC N–n isotype heterojunction. N-type β -Ga 2 O 3 of thickness 2.7 μ m was grown using low-pressure chemical vapor deposition using germanium (Ge) as the dopant on an n-type 4H-SiC substrate. The grown epilayer having (− 201) orientation was verified through XRD. Temperature-dependent I–V and C–V measurements were performed (50–300 K) to investigate the transport properties across the heterojunction. First, lateral diodes were fabricated on β -Ga 2 O 3 , and from C–V, n-doping was estimated to be 2.3 × 10 17 cm − 3 in the epilayer while the Schottky barrier height was estimated to be 1.75 eV. In top-down I–V sweeps, the reverse current across the heterojunction exhibited marginal dependence on temperature, indicating a possible tunnelling-based transport mechanism, while the forward current exhibited an exponential dependence on both temperature and the applied bias. The band diagram indicated the formation of a two-dimensional electron gas (2DEG) at the hetero-interface, which was indirectly confirmed using C–V measurement and TCAD simulation at low temperatures. From the position of the Fermi level in SiC and band diagram, a conduction band offset of 0.4–0.5 eV was estimated between β -Ga 2 O 3 and 4H-SiC. [ABSTRACT FROM AUTHOR]

Background: CLS causes severe yield loss in mung bean. To sustain mung bean health, it is vital to include alleles that may be useful in resisting CLS. Therefore, in the present study, 90 mung bean genotypes were included for assessing genetic diversity using 66 SSR markers for CLS resistance. Methods: The mung bean crop was regularly monitored for the presence of pathogen and development of CLS disease in natural field conditions during pre rabi 2018 and pre rabi 2019. CLS screening assessments of germplasms were carried out using a 1-5 rating scale. Total genomic DNA was isolated from the leaf samples of all the genotypes and SSR genotyping was performed. The genotyping data were analysed by using GenAlEx 6.51b2 and TASSEL 5.0 software programme for genetic diversity parameters. Result: A moderate molecular diversity was observed in the panel population as a wide variation in alleles showed a range of 80 bp to 300 bp with the average PIC value of 0.40. The maximum percentage of polymorphic loci was 75.76% in the resistance genotypes followed by 56.06% in moderately resistant genotypes. The percentages of Shannon information among and within the population were found to be 44% and 56%, respectively. The archaeopterx tree differentiated the panel population into two major clusters, i.e., cluster I and cluster II, which were again sub divided into different sub-clusters and sub-sub clusters. These findings indicate that, the mung bean germplasm panel used in the present study could enrich the local gene pool and provide information for CLS resistance breeding. [ABSTRACT FROM AUTHOR]

Background: Cowpea [Vigna unguiculata (L.) Walp.] is an important food legume in the drier region and an essential component of the tropics and subtropics for the cropping system. Heavy infestation of cowpea by root knot nematode Meloidogyne incognita led to early senescence of the crop. The experiment was carried out to determine the potential level and the extent of yield loss in cowpea due to root knot nematode. Methods: A pot culture study and a field experiment were conducted to determine pathogenic potential level of root knot nematode and to determine the yield loss in cowpea with various treatment of 10, 100, 1000 and 10000 freshly hatched juveniles. Result: The treatment with nematicide, Carbofuran 3G @ 3 kg a.i./ha, reduced the final nematode population i.e., 50.94% in soil, 46.12% on root and 46.51% decrease in root knot index. The present study revealed that 1000 J2/pot was the ETL level that reduced all the growth parameters of cowpea and avoidable yield loss of 15.78% was recorded in Ccowpea due to M. incognita. [ABSTRACT FROM AUTHOR]