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This research paper discusses the performance enhancement techniques of multi-layered OLED structures. OLED's electrical behaviour is evaluated using an analytical model using benchmarked industry-standard Atlas 2-D numerical device simulator. It highlights the extraction of emission and charge transport phenomena and charges injection role. Multilayer OLED device has been investigated by extracting the key performance parameters, including the current density and luminescent power as a function of anode voltage. There is an improvement of 15% in the current density. Furthermore, this work has proceeded with internal analysis and using a mathematical model, where the electric field, total current density, electron and hole concentration, and internal device parameters have been extracted to understand the performance of OLED devices better. Additionally, the internal physics and behaviour of the device have been studied in terms of Langevin recombination. Internal analysis is performed by making cutlines in a vertical fashion so that device physics and the process occurring in the internal part can be clearly understood. The OLED device behaviour analysis is performed using the industry standard state of art device simulation tool. [ABSTRACT FROM AUTHOR]

The non-toxic and organic–inorganic double perovskite material (FA)2BiCuI6, has garnered significant curiosity as a double perovskites solar cell (DPSC) absorber layer owing to its exceptional optoelectronic characteristics, making it well-suited for photovoltaic (PV) applications. To assess the viability of (FA)2BiCuI6 as a prospective material for the solar cell absorption layer, the SCAPS-1D simulation tool is used to explore the optimal configuration of solar cell involving the different electron transport layer (ETL) and hole transport layer (HTL). ETLs such as PCBM, Ag2S, ZnO0.3S0.7, C60, Nb2O5, and ZnSe, along with HTLs like Mg-CuCrO2, CBTS, CFTS, GO, SWCNT, and CuI, are thoroughly considered for integration with the absorber layer. Each ETL is methodically examined in combination with each HTL to identify the optimal pairing with (FA)2BiCuI6. This analysis leads to the identification of a champion DPSC configuration, which is then further optimized to achieve higher efficiency. The champion device structured as FTO/Nb2O5/(FA)2BiCuI6/Mg-CuCrO2/Se demonstrates highest power conversion efficiency approximately 24.42%, open-circuit voltage = 1.077 V, short-circuit current density = 26.03 mA/cm2 and fill factor of 87.12% are observed after optimization of various solar cell parameters. This proposed configuration aims to optimize light absorption, charge carrier transport, and extraction efficiency to achieve high solar cell performance. This work proposes the most suitable DPSC configurations for PV applications, analysing on the basis of variables such as absorber layer thickness, shallow acceptor density, defect density, and interfacial defect density. Additionally, the investigation delves into the influence of series and shunt resistances on proposed DPSC structures. To gain deeper insights, the analysis incorporates JV curves and quantum efficiency plots for the proposed champion configuration. Device performance is stable with temperature at 300 K. [ABSTRACT FROM AUTHOR]

In this study, an environmental-friendly heterostructure perovskite solar cell is constructed using non-toxic, lead-free double perovskite material (FA)2BiCuI6 as an active layer. The proposed device architecture is FTO/STO/(FA)2BiCuI6/GO/Pd. An extensive theoretical analysis and optimization is conducted using SCAPS-1D simulation tool. The thickness of absorber layer, shallow acceptor density, back metal contact and operating temperature are varied to optimize performance parameter of device. Optimized results have been observed at 700 nm absorber thickness for shallow acceptor density 1.0 × 1019 cm−3 and 300 K operating temperature. A small value of series resistance 1 Ω cm2 along with high shunt resistance 100,000 Ω cm2 is incorporated from the initial condition. The solar cell characteristics obtained are as open circuit voltage 1.10 V, short circuit current density 26.03 mA/cm2, fill factor 86.62% and device power conversion efficiency 24.69%. The study concludes that the metal-work function can be carefully modulated to further enhance the performance characteristics of a device. Generation recombination has been studied. Further current density–voltage characteristics (J–V), capacitance–voltage (C–V), and capacitance–frequency (C–f) characteristics have also been studied to explore the electrical characteristics of device. These findings suggest that a thorough analysis of materials could lead to their potential use as a high-performance active material for solar applications. [ABSTRACT FROM AUTHOR]

The purpose of this work is comparative analysis of two different lead-free perovskite material in perovskite/CIGS solar cell. The proposed model is numerically simulated using solar cell capacitance one-dimensional software (SCAPS). The motive of the work is to enhance the efficiency by optimizing the photovoltaic (PV) performance parameter of perovskite/CIGS solar cell by varying thickness, acceptor density, defect density of absorber layer and by changing the thickness of back surface field (BSF) layer. Methylammonium tin iodide (MASnI3) and potassium tin chloride (KSnCl3) have been used as absorber layer in two different proposed structure along with copper indium gallium selenide (CIGS) as a second absorber layer in perovskite/CIGS solar cell. The thickness of CIGS and BSF Layer is varied from 0.1μm to 2 μm and 0.1μm to 1.0 μm, respectively, to optimize the structure. Optimized structure shows the power conversion efficiency 28.11% for MASnI3 and 29.08% for KSnCl3. Molybdenum is used as back contact having work function 5 eV. [ABSTRACT FROM AUTHOR]

In this study, halide double perovskite (FA)2BiCuI6 is used as a light-harvesting layer for device structure FTO/WO3/(FA)2BiCuI6/Zn2P3/Pd. The device unveils best photovoltaic performance having fill factor (FF) of 78.54% and power conversion efficiency (PCE) of 19.89%. The double perovskite solar cell configuration FTO/WO3/(FA)2BiCuI6/Zn2P3/Pd is modeled further for optimum input specification of absorber layer. The most favorable absorber layer's thickness and defect density of (FA)2BiCuI6 layer are 0.7 µm and 1.0 × 1013 cm−3, respectively. The variation in temperature is made in the range of 300 to 480 K, and it has been observed that at 300 K temperature solar cell performance is enhanced. For maximum performance, device framework works on series resistance of 3 Ω cm and shunt resistance of 8000 Ω cm2. The estimation of optimum parameters of device input is done by the SCAPS-1D tool. Optimization of the device framework is done, and palladium (Pd) is used instead of popular back contact metal gold (Au). The results obtained for the proposed double perovskites solar cell (DPSC) show improved performance from the earlier reported work. [ABSTRACT FROM AUTHOR]

We report a case of Wildervanck syndrome exhibiting Klippel-Feil anomaly, Duane retraction syndrome and deafness. Since the first case was reported in 1952, there have been more reports describing this triad, either complete or incomplete. Our patient had the complete triad of the syndrome along with cleft palate and short stature. Also, a review of the literature regarding this syndrome is presented here.

In this article, the thin-film solar cell (TFSC) based on a non-toxic In2Se3 buffer layer and low-cost ultra-thin BaSi2 Back Surface Field (BSF) has been proposed to enhance the performance of copper indium gallium diselenide (CIGS) solar cell. The proposed AI/SnO2/In2Se3/CIGS/BaSi2/Mo TFSC also aims to be cost-effective with reduced use of toxic material. Consequently, the CIGS layer thickness has been optimized (varied from 0.1–1 μm) and the non-toxic In2Se3 buffer layer has been used compared to conventional toxic CdS-based AI/ZnO/CdS/CIGS/Mo TFSC. The proposed TFSC achieves the conversion efficiency (CE) of 28.15% for the optimized CIGS thickness of 0.7 μm and BaSi2 BSF layer thickness of 0.3 μm. Further, the proposed TFSC has been investigated for variation in defect density, acceptor impurity of the CIGS absorber layer, and operating temperature of the device. Additionally, the results obtained for the proposed TFSC show improvement in the performance from the previously reported TFSC. [ABSTRACT FROM AUTHOR]