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2. Evaluation of ELDRS Mechanisms Using Dose Rate Switching Experiments on Gated Lateral PNP Transistors

Author

Gonzalez-Velo, Yago, primary, Boch, Jérôme, additional, Saigne, Frédéric, additional, Roche, Nicolas J.-H., additional, Perez, Stephanie, additional, Vaille, Jean-Roch, additional, Deneau, Christelle, additional, Dusseau, Laurent, additional, Lorfevre, Eric, additional, Schrimpf, Ronald D., additional, Chatry, Christian, additional, Legoulven, Enoal, additional, and Platteter, Dale G., additional

Published
2011
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4. Study of Synergism Effect Between TID and ATREE on the Response of the LM124 Operational Amplifier

Author

Roche, Nicolas J.-H., primary, Perez, Stephanie, additional, Mekki, Julien, additional, Gonzalez Velo, Y., additional, Dusseau, Laurent, additional, Boch, Jérôme, additional, Vaille, Jean-Roch, additional, Saigne, Frédéric, additional, Marec, Ronan, additional, Calvel, Philippe, additional, Bezerra, Francoise, additional, Auriel, Gérard, additional, Azais, Bruno, additional, and Buchner, Stephen P., additional

Published
2011
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6. Experimental Characterization of an Atmospheric Environment With a Stratospheric Balloon

Author

Wrobel, Frédéric, primary, Vaille, Jean-Roch, additional, Pantel, Denis, additional, Dilillo, Luigi, additional, Rech, Paolo, additional, Galliere, Jean-Marc, additional, Touboul, Antoine, additional, Chadoutaud, Pierre, additional, Cocquerez, Philippe, additional, Lacourty, Michel, additional, Lam-Trong, Thien, additional, Autran, Jean-Luc, additional, Chatry, Christian, additional, Laplanche, Florent, additional, Azais, Bruno, additional, and Saigne, Frédéric, additional

Published
2011
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7. Impact of Switched Dose-Rate Irradiation on the Response of the LM124 Operational Amplifier to Pulsed X-Rays

Author

Roche, Nicolas J.-H., primary, Dusseau, Laurent, additional, Mekki, Julien, additional, Perez, Stephanie, additional, Vaille, Jean-Roch, additional, Gonzalez Velo, Yago, additional, Boch, Jérome, additional, Saigne, Frédéric, additional, Marec, Ronan, additional, Calvel, Philippe, additional, Bezerra, Francoise, additional, Auriel, Gérard, additional, Azais, Bruno, additional, and Buchner, Stephen P., additional

Published
2011
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10. Bias Effects on Total Dose-Induced Degradation of Bipolar Linear Microcircuits for Switched Dose-Rate Irradiation

Author

Velo, Y. Gonzalez, primary, Boch, Jérôme, additional, Roche, Nicolas Jean-Henri, additional, Perez, Stephanie, additional, Vaille, Jean-Roch, additional, Dusseau, Laurent, additional, Saigne, Frédéric, additional, Lorfevre, Eric, additional, Schrimpf, Ronald. D., additional, Chatry, Christian, additional, and Canals, Anna, additional

Published
2010
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12. The Use of a Dose-Rate Switching Technique to Characterize Bipolar Devices

Author

Boch, JÉrÔme, primary, Gonzalez Velo, Yago, additional, Saigne, FrÉdÉric, additional, Roche, Nicolas J.-H., additional, Schrimpf, Ronald D., additional, Vaille, Jean-Roch, additional, Dusseau, Laurent, additional, Chatry, Christian, additional, Lorfevre, Eric, additional, Ecoffet, Robert, additional, and Touboul, Antoine D., additional

Published
2009
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13. Accelerated Irradiation Method to Study Synergy Effects in Bipolar Integrated Circuits

Author

Roche, Nicolas Jean-Henri, primary, Gonzalez Velo, Yago, additional, Dusseau, Laurent, additional, Boch, JÉrÔme, additional, Vaille, Jean-Roch, additional, Saigne, FrÉdÉric, additional, Azais, Bruno, additional, Auriel, GÉrard, additional, Lorfevre, Eric, additional, Pouget, Vincent, additional, Buchner, Stephen P., additional, David, Jean-Pierre, additional, Marec, Ronan, additional, and Calvel, Philippe, additional

Published
2009
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14. Contribution of Latent Defects Induced by High-Energy Heavy Ion Irradiation on the Gate Oxide Breakdown

Author

Marinoni, Mathias, primary, Touboul, Antoine D., additional, Zander, Damien, additional, Petit, Christian, additional, Carvalho, Aminata M. J. F., additional, Wrobel, FrÉdÉric, additional, Saigne, FrÉdÉric, additional, Weulersse, Cecile, additional, Miller, Florent, additional, Carreire, Thierry, additional, and Lorfevre, Eric, additional

Published
2009
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15. High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects

Author

Marinoni, Mathias, primary, Touboul, Antoine D., additional, Zander, Damien, additional, Petit, Christian, additional, Wrobel, FrÉdÉric, additional, Carvalho, Aminata M. J. F., additional, Arinero, Richard, additional, Ramonda, Michel, additional, Saigne, FrÉdÉric, additional, Weulersse, Cecile, additional, Buard, Nadine, additional, Carriere, Thierry, additional, and Lorfevre, Eric, additional

Published
2008
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22. Impact of Resistive-Open Defects on SRAM Error Rate Induced by Alpha Particles and Neutrons.

Author

Rech, Paolo, Galliere, Jean-Marc, Girard, Patrick, Wrobel, Frédéric, Saigne, Frédéric, and Dilillo, Luigi

Subjects
ALPHA rays, NEUTRONS, ERROR rates, ERROR analysis in mathematics, ELECTRIC resistance, STRAINS & stresses (Mechanics), TERRESTRIAL radiation, RANDOM access memory, ELECTRIC resistors
Abstract

This paper presents the results of SPICE simulations of terrestrial radiation induced effects on SRAM cells in which resistive-open defects are introduced. This kind of defect is difficult to be detected with standard manufacturing tests. Although the presence of the defect may not affect the memory functionality when not exposed to radiation, it alters the radiation induced error rate of the cell both under static and dynamic conditions. Moreover, the defect can increase the SRAM radiation-induced error rate when operations are applied to the cell (dynamic mode). For the purpose of estimating the impact of resistive-open defects on SRAM radiation sensitivity, we consider defects with different resistive values and compare the analytically calculated error rates during different SRAM operating modes. [ABSTRACT FROM AUTHOR]

Published
2011
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23. RADECS 2005 Conference Overview.

Author

Dusseau, Laurent, Saigne, Frédéric, and Gasiot, Jean

Subjects
*CONFERENCES & conventions, *ELECTRONICS conventions, *RADIATION, *SPECIAL events
Abstract

Information about the 8th European Conference on Radiation and its Effects on Components and Systems which was held in France on September 19-23, 2005 is presented. The conference was attended by several scientists, students, and engineers from industry, government organizations, and research institutes. Moreover, it featured several experts in dealing with radiation related issues including Fred Wrobel, D. Fleetwood, and Michael Moll.

Published
2006
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24. SiO2–Si under swift heavy ion irradiation: A comparison between normal and grazing incidence features

Author

Carvalho, Aminata M.J.F., Touboul, Antoine D., Marinoni, Mathias, Carlotti, Jean-François, Guasch, Cathy, Ramonda, Michel, Lebius, Henning, Saigne, Frédéric, and Bonnet, Jacques

Subjects
*SILICON oxide, *SILICON, *HEAVY ions, *GRAZING incidence
Abstract

Abstract: A comparison between experimental results on SiO2–Si under swift heavy ion irradiation at normal and grazing incidence is dealt with. After irradiation, the samples were gradually etched in an aqueous hydrofluoric acid solution. Atomic force microscopy has been used to study the evolution of the tracks regarding their extension and shape. At normal incidence, the latent tracks are revealed by chemical etching. Increasing the etching time, nano-hillocks appeared in the depths of each of the conical holes formed at the beginning of the chemical process. When the SiO2 layer is completely removed, nano-bumps are clearly visible at the interface between the two materials. Under grazing incidence (1° of beam inclination), elongated discontinuous tracks are directly observable after irradiation on the SiO2 surface. While with a sequential chemical etching, the intermittent tracks leave room to lengthy craters of decreasing depth, which disappear when the oxide layer is completely etched-away. [Copyright &y& Elsevier]

Published
2008
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