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Spin-transfer torque magnetic random-access memory (STT-MRAM) based on a single-barrier magnetic tunnel junction (SBMTJ) and a double-barrier magnetic tunnel junction (DBMTJ) has evolved along with a low switching current and low energy consumption to obtain a high areal density and a fast switching speed. The increment of initial temperature, ${T}_{{\text {in}}}$ , in STT-MRAM can achieve low switching energy, ${E}_{{\text {SW}}}$. However, this leads to an unavoidable decrease in $\Delta $ and switching efficiency. In this paper, SBMTJ and DBMTJ were analyzed in terms of the switching efficiency factor with ${E}_{{\text {SW}}}$ reduction by increasing the ${T}_{{\text {in}}}$. The switching temperature, ${T}_{{\text {SW}}}$ , was investigated using a finite-element method simulation. The results show that the DBMTJ(A) and SBMTJ with the same MgO layer thickness of 0.9 nm provide a higher switching current, ${I}_{{\text {C}}}$ , than the DBMTJ(B) with a MgO layer thickness of 1.3 nm. The ${T}_{{\text {SW}}}$ in a DBMTJ(A) is higher than that in an SBMTJ, while ${T}_{{\text {SW}}}$ for a DBMTJ(B) is the smallest because of its low ${I}_{{\text {C}}}$. The DBMTJ(A) and DBMTJ(B) can be applied in a higher temperature range than the SBMTJ at a $\Delta $ of 40. In addition, the STT efficiency factor, $\Delta /{I}_{{\text {C0}}}$ , for a DBMTJ is better than the factor for an SBMTJ. Although the temperature increment would cause an undesirable reduction in $\Delta $ , it can reach a low ${E}_{{\text {SW}}}$ for the requirement of a fast write access time. Therefore, the control device for increasing the ${T}_{{\text {in}}}$ in the MTJs is attractive and should be promoted in the advancement of memory technology. [ABSTRACT FROM AUTHOR]