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Direct thermal-to-electric energy converters typically operate in the linear regime, where the ratio of actual maximum power relative to the ideal maximum power, the so-called fill factor (FF), is 0.25. By increasing the FF one can potentially increase maximum power by up to four times, but this is only possible in the nonlinear regime of transport and has previously rarely been considered. Here we show, based on fundamental symmetry considerations, that the leading order non-linear terms that can increase the FF require devices with broken spatial symmetry. To experimentally demonstrate such a system, we study nonlinear, thermoelectric transport across an asymmetric energy barrier epitaxially defined in a single semiconductor nanowire. We find in both experiment and theory that we can increase the FF above the linear-response limit of 0.25, accompanied by a drastic increase in short circuit current, open-circuit voltage and maximum power. Our results show that geometric symmetry breaking combined with the design of nonlinear behaviour represent a design strategy for increasing the performance of thermal-to-electric energy converters such as in hot-carrier photovoltaics, thermophotovoltaics or in anisotropic thermoelectric materials., Comment: 11 pages, 3 figures. Submitted to Nature Physics

The Josephson junction of a strong spin-orbit material under a magnetic field is a promising Majorana fermion candidate. Supercurrent enhancement by a magnetic field has been observed in the InAs nanowire Josephson junctions and assigned to a topological transition. In this work we observe a similar phenomenon but discuss the non-topological origin by considering trapping of quasiparticles by vortices that penetrate the superconductor under a finite magnetic field. This assignment is supported by the observed hysteresis of the switching current when sweeping up and down the magnetic field. Our experiment shows the importance of quasiparticles in superconducting devices with a magnetic field, which can provide important insights for the design of quantum qubits using superconductors., Comment: 10 pages, 8 figures

Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device, especially considering the piezoelectric properties of GaN. Investigation of influence of the metallic contacts on the structure of the NWs is of high importance for their applications in real devices. We have studied a series of different type of contacts and influence of the applied voltage bias on the contacted GaN NWs with the length of about 3 to 4 micrometers and with two different diameters of 200 nm and 350 nm. It was demonstrated that the NWs with the diameter of 200 nm are bend already by the interaction with the substrate. For all GaN NWs, significant structural changes were revealed after the contacts deposition. The results of our research may contribute to the future optoelectronic applications of the GaN nanowires., Comment: 18 pages, 7 figures, 14 references

We report on half-integer Shapiro steps observed in an InAs nanowire Josephson junction. We observed the Shapiro steps of the short ballistic InAs nanowire Josephson junction and found anomalous half-integer steps in addition to the conventional integer steps. The half-integer steps disappear as the temperature increases or transmission of the junction decreases. These experimental results agree closely with numerical calculation of the Shapiro response for the skewed current phase relation in a short ballistic Josephson junction.

The separation of hot carriers in semiconductors is of interest for applications such as thermovoltaic photodetection and third-generation photovoltaics. Semiconductor nanowires offer several potential advantages for effective hot-carrier separation such as: a high degree of control and flexibility in heterostructure-based band engineering, increased hot-carrier temperatures compared to bulk, and a geometry well suited for local control of light absorption. Indeed, InAs nanowires with a short InP energy barrier have been observed to produce electric power under global illumination, with an open-circuit voltage exceeding the Shockley-Queisser limit. To understand this behaviour in more detail, it is necessary to maintain control over the precise location of electron-hole pair-generation in the nanowire. In this work we perform electron-beam induced current measurements with high spatial resolution, and demonstrate the role of the InP barrier in extracting energetic electrons. We interprete the results in terms of hot-carrier separation, and extract estimates of the hot carrier mean free path.

Cooper pair splitting (CPS) can induce non-local correlation between two normal conductors coupling to a superconductor. CPS into a double one-dimensional electron gas is an appropriate platform for extracting large amount of entangled electron pairs and one of the key ingredients for engineering Majorana Fermions with no magnetic field. Here we study CPS using a Josephson junction of a gate-tunable ballistic InAs double nanowire. The measured switching current into the two nanowires significantly larger than sum of that into the respective nanowires, indicating the inter-wire superconductivity dominant compared to the intra-wire superconductivity. From dependence on the number of propagating channels in the nanowires, the observed CPS is assigned to one-dimensional electron-electron interaction. Our results will pave the way for utilizing one-dimensional electron-electron interaction to reveal physics of high-efficient CPS and engineer Majorana Fermions in double nanowire systems via CPS.

We investigate the Josephson radiation of nanowire (NW)-based Josephson junctions in a parallel magnetic field. The Josephson junction made of an InAs NW with superconducting Al leads shows the emission spectra which follow the Josephson frequency $f_{J}$ over the range 4-8 GHz at zero magnetic field. We observe an apparent deviation of the emission spectra from the Josephson frequency which is accompanied by a strong enhancement of the switching current above a magnetic field of $\sim 300$ mT. The observed modulations can be understood to reflect trivial changes in the superconducting circuit surrounding the device which is strongly affected by the applied magnetic field. Our findings will provide a way to accurately investigate topological properties in NW-based systems., Comment: 18 pages, 6 figures

We report on the fabrication and electrical characterization of an InAs double - nanowire (NW) device consisting of two closely placed parallel NWs coupled to a common superconducting electrode on one side and individual normal metal leads on the other. In this new type of device we detect Cooper-pair splitting (CPS) with a sizeable efficiency of correlated currents in both NWs. In contrast to earlier experiments, where CPS was realized in a single NW, demonstrating an intrawire electron pairing mediated by the superconductor (SC), our experiment demonstrates an inter- wire interaction mediated by the common SC. The latter is the key for the realization of zero-magnetic field Majorana bound states, or Parafermions; in NWs and therefore constitutes a milestone towards topological superconductivity. In addition, we observe transport resonances that occur only in the superconducting state, which we tentatively attribute to Andreev Bound states and/or Yu-Shiba resonances that form in the proximitized section of one NW.

Semiconductor nanowires offer great potential for realizing broadband photodetectors that are compatible with silicon technology. However, the spectral range of such detectors has so far been limited to selected regions in the ultraviolet, visible and near infrared. Here, we report on broadband nanowire heterostructure array photodetectors exhibiting a photoresponse from the visible to long-wavelength infrared. In particular, the infrared response from 3-20 um is enabled by normal incidence excitation of intersubband transitions in low-bandgap InAsP quantum discs synthesized axially within InP nanowires. The optical characteristics are explained by the excitation of the longitudinal component of optical modes in the photonic crystal formed by the nanostructured portion of the detectors, combined with a non-symmetric potential profile of the discs resulting from synthesis. Our results provide a generalizable insight into how broadband nanowire photodetectors may be designed, and how engineered nanowire heterostructures open up new fascinating opportunities for optoelectronics.

Avalanche photodetectors (APDs) are key components in optical communication systems due to their increased photocurrent gain and short response time as compared to conventional photodetectors. A detector design where the multiplication region is implemented in a large bandgap material is desired to avoid detrimental Zener tunneling leakage currents, a concern otherwise in smaller bandgap materials required for absorption at 1.3/1.55 um. Self-assembled III-V semiconductor nanowires offer key advantages such as enhanced absorption due to optical resonance effects, strain-relaxed heterostructures and compatibility with main-stream silicon technology. Here, we present electrical and optical characteristics of single InP and InP/InAsP nanowire APD structures. Temperature-dependent breakdown characteristics of p+-n-n+ InP nanowire devices were investigated first. A clear trap-induced shift in breakdown voltage was inferred from I-V measurements. An improved contact formation to the p+-InP segment was observed upon annealing, and its effect on breakdown characteristics was investigated. The bandgap in the absorption region was subsequently varied from pure InP to InAsP to realize spatially separate absorption and multiplication APDs in heterostructure nanowires. In contrast to the homojunction APDs, no trap-induced shifts were observed for the heterostructure APDs. A gain of 12 was demonstrated for selective optical excitation of the InAsP segment. Additional electron beam-induced current measurements were carried out to investigate the effect of local excitation along the nanowire on the I-V characteristics. Our results provide important insight for optimization of avalanche photodetector devices based on III-V nanowires.

We report low-temperature transport studies of parallel double quantum dots formed in GaSb/InAsSb core-shell nanowires. At negative gate voltages, regular patterns of Coulomb diamonds are observed in the charge stability diagrams, which we ascribe to single-hole tunneling through a quantum dot in the GaSb core. As the gate voltage increases, the measured charge stability diagram indicates the appearance of an additional quantum dot, which we suggest is an electron quantum dot formed in the InAsSb shell. We find that an electron-hole interaction induces shifts of transport resonances in the source-drain voltage from which an average electron-hole interaction strength of 2.9 meV is extracted. We also carry out magnetotransport measurements of a hole quantum dot in the GaSb core and extract level-dependent g- factors and a spin-orbit interaction., Comment: 26 page, 14 figures

An important consideration in miniaturizing transistors is maximizing the coupling between the gate and the semiconductor channel. A nanowire with a coaxial metal gate provides optimal gate-channel coupling, but has only been realized for vertically oriented nanowire transistors. We report a method for producing laterally oriented wrap-gated nanowire field-effect transistors that provides exquisite control over the gate length via a single wet etch step, eliminating the need for additional lithography beyond that required to define the source/drain contacts and gate lead. It allows the contacts and nanowire segments extending beyond the wrap-gate to be controlled independently by biasing the doped substrate, significantly improving the sub-threshold electrical characteristics. Our devices provide stronger, more symmetric gating of the nanowire, operate at temperatures between 300 to 4 Kelvin, and offer new opportunities in applications ranging from studies of one-dimensional quantum transport through to chemical and biological sensing., Comment: 16 pages, 5 figures. Submitted version, published version available at http://http://pubs.acs.org/journal/nalefd

We demonstrate the Au-assisted growth of semiconductor nanowires on different engineered substrates. Two relevant cases are investigated: GaAs/AlGaAs heterostructures capped by a $50 {\rm nm}$-thick InAs layer grown by molecular beam epitaxy and a $2 {\rm \mu m}$-thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures., Comment: 5 pages, 5 figures, suppl.mat

We present a capacitance-voltage study for arrays of vertical InAs nanowires. MOS capacitors are obtained by insulating the nanowires with a conformal 10nm HfO2 layer and using a top Cr/Au metallization as one of the capacitor's electrodes. The described fabrication and characterization technique enables a systematic investigation of the carrier density in the nanowires as well as of the quality of the MOS interface., Comment: 8 pages, 3 figures

We have fabricated and studied the photoluminescence from microdisks containing single, selected self-assembled quantum dots. Using two electron beam lithography exposures and a two-step selective wet etching process, the dots were positioned at the microdisks edges with sub-micron precision. The selection and positioning of quantum dots enables an optimum coupling of the dot emission to the microdisks whispering modes., Comment: 3 pages, 2 eps-figures

We investigate the transport properties of a new class of ratchets. The device is constructed by applying an ac voltage to the metallic single electron tunneling transistor, and a net transport current is induced by the time-dependent bias-voltage, although the voltage value is on the average zero. The mechanism underlying this phenomenon is the Coulomb blockade of the single electron tunneling. The directions and the values of the induced net currents can be well controlled by the gate-voltage. A net transport current has also been observed even in the absence of the external bias-voltages, which is attributed to the noise in the circuit., Comment: 7 pages, 4 eps-figures