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The strategy of incorporating self‐assembled monolayers (SAMs) with anchoring groups is an effective and promising method for interface engineering in perovskite solar cells with metal oxide charge‐transporting layers. However, coating SAM layers in upscaled perovskite solar modules (PSMs) using slot‐die coating is challenging due to the low viscosity and wettability of the solutions. In this study, a triphenylamine‐based polymer poly([{5‐[4‐(diphenylamino)phenyl]‐2‐thienyl}(4‐fluorophenyl)methylene]malononitrile) (pTPA)–TDP, blended with SAM based on 5‐[4‐[4‐(diphenylamino)phenyl]thiophene‐2‐carboxylic acid, is integrated to address these challenges. And, p–i–n‐oriented PSMs on 50 × 50 mm2 substrates (12 sub‐cells) are fabricated with a NiO hole‐transport layer and organic interlayers for surface modification. Wetting angle mapping shows that ununiform regions of the slot‐die‐coated SAM has extreme hydrophobicity, causing absorber thickness fluctuations and macro‐defects at buried interfaces. The blended interlayer at the NiO/perovskite junction homogenizes surface wettability and mitigates lattice strain, enabling the effective use of SAM properties on large surfaces. This improved energy level alignment, enhancing the power conversion efficiency of the modules from 13.98% to 15.83% and stability (ISOS‐L‐2, T80 period) from 500 to 1630 h. In these results, the complex effects of using SAM in slot‐die‐coating technology for large‐scale perovskite photovoltaics are highlighted. [ABSTRACT FROM AUTHOR]

p-NiO/n-Ga2O3 heterojunction (HJ) diodes exhibit much larger changes in their properties upon 1.1 MeV proton irradiation than Schottky diodes (SDs) prepared on the same material. In p-NiO/Ga2O3 HJ diodes, the narrow region adjacent to the HJ boundary is found to contain a high density of relatively deep centers with levels near EC-0.17 eV and a depleted region in the immediate vicinity of the HJ boundary. The series resistance of the HJ diodes is slightly higher than for the Schottky diodes and shows a temperature dependence with activation energy ~ 0.12 eV, like the temperature dependence of the NiO film resistivity. Irradiation with 1.1 MeV protons leads to a decrease of the hole concentration in the NiO, with a high carrier removal rate of ~ 1.3 × 105 cm−1 and a strong compensation of the interfacial region where the concentration of the EC-0.17 eV centers decreases with a high rate of ~ 7 × 103 cm−1. The combined action of these two effects gives rise to the much stronger increase of the series resistance of the HJ diodes compared to Schottky diodes. The observed differences between the radiation response of the HJs and SDs cannot be credibly attributed to the changes of the density of any of the deep electron and hole traps detected in our experiments. [ABSTRACT FROM AUTHOR]

no Abstract [ABSTRACT FROM AUTHOR]

Liquid-phase exfoliation of zirconium trisulfide (ZrS 3 ) was used to produce stable and ready-to-use inks for solution-processed semiconductor thin-film deposition. Ribbon-like layered crystals of ZrS 3 were produced by the chemical vapor transport method and were then exfoliated in three different solvents: dimethylformamide, ethanol, and isopropyl alcohol. The resulting ZrS 3 dispersions were compared for stability and the ability to form continuous films on top of the perovskite layer in light-emitting diodes with the ITO/PEDOT:PSS/MAPbBr 3 /2D-ZrS 3 /LiF/Al structure. Film deposition was performed by using either spray or slot-die coating methods. The slot-die coating route proved to produce better and more uniform films with respect to spray coating. We found that the 2D ZrS 3 electron injection layer (EIL) stabilized the interface between the perovskite and LiF/Al cathode, reducing the turn-on voltage to 2.8 V and showing a luminance that does not degrade during voltage sweep. On the other hand, EIL-free devices show electroluminescence on the first voltage sweep that reduces almost to zero in the subsequent sweeps. Combining physical device simulation and density functional theory calculation, we are able to explain these results in terms of lowering the electron injection barrier at the cathode.