111 results on '"Saraswat, K. C."'
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2. Germanium Nanodevices and Technology
3. 3-D ICS DSM Interconnect Performance Modeling and Analysis
4. Three Dimensional Simulation for Sputter Deposition Equipment and Processes
5. Improved gradual resistive switching range and 1000× on/off ratio in HfOx RRAM achieved with a Ge2Sb2Te5 thermal barrier.
6. Growth and Characterization of Thin Wet Oxides Grown by Rapid Thermal Processing
7. Simulation of the Effect of Dielectric Air Gaps on Interconnect Reliability
8. (Invited) The Effect of Germanium/Silicon Interface on Germanium Photonics
9. (Invited) Low Resistance Contacts to Nanoscale Semiconductor Devices
10. A 3-dimensional model for low-pressure chemical-vapor-deposition step coverage in trenches and circular vias.
11. Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge.
12. Thermal oxidation of silicides.
13. Statistical limits of contact resistivity due to atomistic variation in nanoscale contacts
14. A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase & Endurance to 10^5 Cycles
15. Silicon Epitaxy and Oxidation
16. Germanium Nanodevices and Technology
17. (Invited) Light Emission from Highly-Strained Germanium for On-Chip Optical Interconnects
18. Germanium on insulator (GOI) structure locally grown on silicon using hetero epitaxial lateral overgrowth
19. Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium $\hbox{n}^{+}/\hbox{p}$ Junction
20. Beyond interface: The impact of oxide border traps on InGaAs and Ge n-MOSFETs
21. Towards high mobility GeSn channel nMOSFETs: Improved surface passivation using novel ozone oxidation method
22. InGaSb: Single channel solution for realizing III–V CMOS
23. Germanium on Insulator (GOI) Structure Using Hetero-Epitaxial Lateral Overgrowth on Silicon
24. III-Sb MOSFETS : Opportunities and Challenges
25. Solid phase epitaxial re-growth of Sn ion implanted germanium thin films
26. Fermi-level pinning at metal/antimonides interface and demonstration of antimonides-based metal S/D Schottky pMOSFETs
27. Engineering the complete MANOS-type NVM stack for best in class retention performance
28. A Modulator Design Methodology Minimizing Power Dissipation in a Quantum Well Modulator-Based Optical Interconnect
29. Low Temperature Processes using Ni-induced Crystallization Technique for Monolithic Three Dimensional Integration
30. Electro-Thermally Coupled Power Optimization for Future Transistors
31. Germanium Nanodevices and Technology.
32. Abatement of perfluorocarbons with an inductively coupled plasma reactor
33. In Situ Monitoring of Crystallinity and Temperature during Rapid Thermal Crystallization of Silicon on Glass
34. A novel technique for in-situ monitoring of crystallinity and temperature during rapid thermal annealing of thin Si/Si-Ge films on quartz/glass
35. Effect of annealing ambient on performance and reliability of low pressure chemical vapor deposited oxides for thin film transistors
36. A New Flexible Rapid Thermal Processing System
37. ChemInform Abstract: Deposition and Properties of Low‐Pressure Chemical‐Vapor Deposited Polycrystalline Silicon‐Germanium Films.
38. Temperature measurement in rapid thermal processing using acoustic techniques
39. Backscattered deposition in Ar sputter etch of silicon dioxide
40. Development of Design Rules for Reliable Tungsten Plugs using Simulations
41. Simulation of Mass Transport for Deposition in Via Holes and Trenches
42. Diffusion of arsenic in polycrystalline silicon.
43. Method for angular sputter yield extraction for high-density plasma chemical vapor deposition simulators.
44. Two precursor model for low-pressure chemical vapor deposition of silicon dioxide from tetraethylorthosilicate.
45. Reliability Studies on Multilevel Interconnection with Intermetal Dielectric Air Gaps
46. Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium n+/p Junction.
47. The Effect of Fixed Charge in Tunnel-Barrier Contacts for Fermi-Level Depinning in Germanium.
48. Time-dependent compositional variation in SiO2 films nitrided in ammonia.
49. Studies of steam-oxidized WSi2 by Auger sputter profiling.
50. Arsenic segregation in polycrystalline silicon.
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