23 results on '"Sathiyanarayanan, Rajesh"'
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2. Coupling Reactor-scale and Feature-Scale Simulations: ProcessTwin™ for Unit Processes
3. Process Modeling as a Powerful Semiconductor Industry Tool: PVD of W as Case Study
4. Stoichiometry tuning of TaN films through ion treatment: Molecular dynamics study
5. Ab-initio calculations of interactions between Cu adatoms on Cu(1 1 0): Sensitivity of strong multi-site interactions to adatom relaxations
6. Sensitivity of short-range trio interactions to lateral relaxation of adatoms: Challenges for detailed lattice-gas modeling
7. Effective Work Function Computation of HfO2/TiN/W Bi-metal System: Role of Barrier-TiN
8. Nitrogen diffusion in hafnia and the impact of nitridation on oxygen and hydrogen diffusion: A first-principles study.
9. Dielectric properties of Si3-ξGeξN4 and Si3-ξCξN4: A density functional study.
10. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
11. Role of codeposited impurities during growth. II. Dependence of morphology on binding and barrier energies
12. Terrace-width distributions of touching steps: Modification of the fermion analogy with implications for measuring step-step interactions
13. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices.
14. Role of codeposited impurities during growth. I. Explaining distinctive experimental morphology on Cu(0 0 1)
15. STEPS ON VICINAL SURFACES: DENSITY-FUNCTIONAL THEORY CALCULATIONS AND TRANSCENDING MINIMAL STATISTICAL-MECHANICAL MODELS
16. Role of point defects and HfO2/TiN interface stoichiometry on effective work function modulation in ultra-scaled complementary metal–oxide–semiconductor devices
17. Dielectric properties of Si3−ξGeξN4 and Si3−ξCξN4: A density functional study
18. Role of Solvent in the Shape-Controlled Synthesis of Anisotropic Colloidal Nanostructures
19. Role of codeposited impurities during growth. II. Dependence of morphology on binding and barrier energies
20. Role of codeposited impurities during growth. I. Explaining distinctive experimental morphology on Cu(0 0 1)
21. Terrace-width distributions of touching steps: Modification of the fermion analogy with implications for measuring step-step interactions
22. Ab-initio calculations of interactions between Cu adatoms on Cu(110): Sensitivity of strong multi-site interactions to adatom relaxations
23. Impact of oxygen plasma on nitrided and annealed atomic layer deposited SiO2/high-k/metal gate for high-voltage input and output fin-shaped field effect transistor devices
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