1. 1/f-Noise Characteristics in 100 nm-MOSFETs and Its Modeling for Circuit Simulation
- Author
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Toshihiko Kitamura, Shizunori Matsumoto, Hiroaki Ueno, Hans Jurgen Mattausch, Tatsuya Ohguro, Kyoji Yamashita, Shigetaka Kumashiro, Tetsuya Yamaguchi, Satoshi Kure Hosokawa, Noriaki Nakayama, and Mitiko Miura-Mattausch
- Subjects
Physics ,Noise measurement ,Gate oxide ,Noise spectral density ,MOSFET ,Electronic engineering ,Wafer ,Flicker noise ,Electrical and Electronic Engineering ,Noise (electronics) ,Spectral line ,Electronic, Optical and Magnetic Materials ,Computational physics - Abstract
SUMMARY A systematic experimental and modeling study is reported, which characterizes the low-frequency noise spectrum of 100 nmMOSFETs accurately. Two kinds of measured spectra are observed: 1/f and non-1/f spectra. The non-1/f spectrum is analysed by forward and backward measurements with exchanged source and drain, and shown to be due to a randomly distributed inhomogeneity of the trap density along the channel and within the gate oxide. By averaging the spectra of identical MOSFETs on a wafer the measured non-1/f noise spectra reduce to a 1/f characteristics. On the basis of these measurement data a noise model for circuit simulation is developed, which reproduces the low-frequency noise spectrum with a single model parameter for all gate lengths and under any bias conditions.
- Published
- 2005