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The qualification work is devoted to the study of theoretical and practical aspects of the world transport and logistics business. Trends, scales and prospects of development of the transport industry are revealed. Factors of competitiveness of domestic logistics enterprises in world markets are determined. Attention is paid to material flows and processes of fulfillment of consumer orders, promotion of products in the country and abroad. Recommendations for the development of a universal competitiveness strategy for logistics companies in the context of international business development are provided. Кваліфікаційна робота присвячена дослідженню теоретичних та практичних аспектів розвитку світового транспортно-логістичного бізнесу. Виявлено тенденції, масштаби та перспективи розвитку транспортної галузі. Визначено фактори конкурентоспроможністі вітчизняних логістичних підприємств на світових ринках. Приділена увага матеріальним потокам, та процесам виконання замовлень споживачів, просування продукції по країні та за її межами. Надані рекомендації, щодо розробки універсальної стратегії конкурентоспроможності для логістичних компаній в контексті розвитку міжнародного бізнесу.

Nonstoichiometric B-SiC nanoparticles (np-SiC) have been studied by electron paramagnetic resonance (EPR) and pulsed magnetic resonance methods including field swept electron spin echo (FS ESE), pulsed electron nuclear double resonance (ENDOR) and hyperfine sublevel correlation spectroscopy (HYSCORE). Four ESE signals related to the paramagnetic centers labeled D1, D2, D3, D4 with g = 2.0043, g = 2.0029, g = 2.0031, g = 2.0037 were resolved in FS ESE spectrum due to their different spin relaxation times. As deduced from the study of the superhyperfine structure of the D2 defect by FS ESE, pulse ENDOR and HYSCORE methods the dominant paramagnetic center is a carbon vacancy (Vc) localized in B-SiC crystalline phase of the np-SiC. The parameters of the D2 center coincide with those found for the Vc in np-SiC obtained by laser pyrolysis method. Three other defects were identified by comparison of their EPR parameters with the microstructure of the np-SiC. The D1 defect was attributed to the Vc vacancy located in a-SiC crystalline phase. The D3 defect is identified with the carbon dangling bonds located in the carbon excess phase. The D4 defect was assigned to a threefold-coordinated Si atom bonded with one nitrogen atom, resulting in the formation of the local bonding Si-Si2N configuration in a-Si3N4 phase.

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