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298 results on '"Scarselli, M. A."'

2. Electronic correlations in graphite and carbon nanotubes from Auger spectroscopy

Author

Perfetto, E., Cini, M., Ugenti, S., Castrucci, P., Scarselli, M., De Crescenzi, M., Rosei, F., and Khakani, M. A. El

Subjects
Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We have determined the screened on-site Coulomb repulsion in graphite and single wall carbon nanotubes by measuring their Auger spectra and performing a new theoretical analysis based on an extended Cini-Sawatzky approach where only one fit parameter is employed. The experimental lineshape is very well reproduced by the theory and this allows to determine the value of the screened on-site repulsion between $2p$ states, which is found to be 2.1 eV in graphite and 4.6 eV in nanotubes. The latter is robust by varying the nanotube radius from 1 to 2 nm., Comment: 5 pages, 3 figures, to appear in Phys. Rev. B

Published
2007
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5. Light induced tunnel effect in CNT-Si photodiode

Author

Aramo, C., Ambrosio, M., Bonavolontà, C., Boscardin, M., Castrucci, P., Crivellari, M., De Crescenzi, M., de Lisio, C., Fiandrini, E., Grossi, V., Maddalena, P., Passacantando, M., Santucci, S., Scarselli, M., Valentini, A., and Valentino, M.

Published
2016
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20. High graphene permeability for silicon atoms during deposition at room temperature: the role of defects

Author

Ronci, F., Colonna, S., Flammini, R., De Crescenzi, M., Scarselli, M., Salvato, M., Berbezier, I., Jardali, F., Lechner, C., Pochet, P., VACH, HOLGER, Castrucci, P., Istituto di Struttura della Materia (CNR-ISM), National Research Council of Italy | Consiglio Nazionale delle Ricerche (CNR), Dipartimento di Fisica [Roma Tor Vergata], Università degli Studi di Roma Tor Vergata [Roma], Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM), École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Consiglio Nazionale delle Ricerche [Roma] (CNR), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Condensed Matter::Materials Science, ab initio molecular dynamics, Physics::Atomic and Molecular Clusters, Silicene, [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci], Graphene, Scanning tunneling microscopy, Graphene intercalation, 2D Si clusters
Abstract

International audience; Graphene (Gr) is known to be an excellent barrier preventing atoms and molecules to diffuse through it. This is due to the carbon atom arrangement in a two-dimensional (2D) honeycomb structure with a very small lattice parameter thus forming an electron cloud that prevents atoms and molecules crossing. Nonetheless at high temperature of annealing, intercalation of atoms through graphene occurs, opening the path for formation of vertical heterojunctions formed of two-dimensional layers. In this paper, we report on the ability of silicon atoms to penetrate the graphene network, fully epitaxially grown on a Ni(111) surface, even at room temperature. Our scanning tunneling microscopy (STM) shows that defects like vacancies and dislocations of the graphene lattice favor the Si intercalation below the Gr layer forming two-dimensional, flat and disordered islands. Ab-initio molecular dynamics calculations confirm that Gr defects are necessary for Si intercalation at room temperature and show that a hypothetical intercalated silicene layer cannot be stable for more than 8 ps and that the corresponding Si atoms completely lose their in-plane order resulting in a random planar distribution and form strong covalent bonds with Ni atoms.

Published
2020
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24. RECENT RESULTS IN SILICON-CNT PHOTODETECTORS

Author

ARAMO, C., primary, Ambrosio, A., additional, Ambrosio, M., additional, Cilmo, M., additional, Guarino, F., additional, Maddalena, P., additional, Grossi, V., additional, Passacantando, M., additional, Santucci, S., additional, Nappi, E., additional, Tinti, A., additional, Valentini, A., additional, Fiandrini, E., additional, Pignatel, G., additional, Castrucci, P., additional, De Crescenzi, M., additional, and Scarselli, M., additional

Published
2012
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34. Development of new photon detection device for Cherenkov and fluorescence radiation

Author

Tinti A., Scarselli M., Santucci S., Pignatel G., Passacantando M., Nappi E., Guarino F., Grossi V., Maddalena P., Fiandrini E., Cilmo M., De Crescenzi M., Castrucci P., Ambrosio M., Battiston R., Aramo C., Ambrosio A., and Valentini A.

Subjects
Physics, QC1-999
Abstract

Recent progress on the development of a new solid state detector allowed the use of finely pixelled photocathodes obtained from silicon semiconductors. SiPM detectors seem to be an ideal tool for the detection of Cherenkov and fluorescence light in spite of their not yet resolved criticism for operating temperature and intrinsic noise. The main disadvantage of SiPM in this case is the poor sensitivity in the wavelength range 300-400 nm, where the Cherenkov light and fluorescence radiation are generated. We report on the possibility to realize a new kind of pixelled photodetector based on the use of silicon substrate with carbon nanotube compounds, more sensitive to the near UV radiation. Also if at the very beginning, the development of such detector appears very promising and useful for astroparticle physics, both in the ground based arrays and in the space experiments. The detectors are ready to be operated in conditions of measurements without signal amplification.

Published
2013
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39. Progress in quantitative single-molecule localization microscopy

Author

Deschout, H., Shivanandan, A., Annibale, P., Scarselli, M., Radenovic, A., Deschout, H., Shivanandan, A., Annibale, P., Scarselli, M., and Radenovic, A.

Abstract

With the advent of single-molecule localization microscopy (SMLM) techniques, intracellular proteins can be imaged at unprecedented resolution with high specificity and contrast. These techniques can lead to a better understanding of cell functioning, as they allow, among other applications, counting the number of molecules of a protein specie in a single cell, studying the heterogeneity in protein spatial organization, and probing the spatial interactions between different protein species. However, the use of these techniques for accurate quantitative measurements requires corrections for multiple inherent sources of error, including: overcounting due to multiple localizations of a single fluorophore (i.e., photoblinking), undercounting caused by incomplete photoconversion, uncertainty in the localization of single molecules, sample drift during the long imaging time, and inaccurate image registration in the case of dual-color imaging. In this paper, we review recent efforts that address some of these sources of error in quantitative SMLM and give examples in the context of photoactivated localization microscopy(PALM).

Published
2019

41. 3D Multifunctional Carbon Nanotube Networks

Author

Scarselli, M

Subjects
carbon nanotubes, carbon nanotubes, water purification, superhydrophobicity, water purification, superhydrophobicity, Settore FIS/03 - Fisica della Materia
Published
2018

45. Controlling the thickness of carbon nanotube random network films by the estimation of the absorption coefficient

Author

De Nicola, F, Pintossi, C, Nanni, F, Cacciotti, I, Scarselli, M, Drera, G, Pagliara, S, Sangaletti, L, De Crescenzi, M, Castrucci, P, De Nicola F, Pintossi C, Nanni F, Cacciotti I, Scarselli M, Drera G, Pagliara S, Sangaletti L, De Crescenzi M, Castrucci P., De Nicola, F, Pintossi, C, Nanni, F, Cacciotti, I, Scarselli, M, Drera, G, Pagliara, S, Sangaletti, L, De Crescenzi, M, Castrucci, P, De Nicola F, Pintossi C, Nanni F, Cacciotti I, Scarselli M, Drera G, Pagliara S, Sangaletti L, De Crescenzi M, and Castrucci P.

Abstract

Here, we investigate the thickness of single-walled (SWCNT) and multi-walled carbon nanotube (MWCNT) random network films by angle-resolved X-ray photoemission spectroscopy. Furthermore, we estimate the absorption coefficient of carbon nanotube (CNT) films through the Lambert-Beer law, by measuring film optical spectra. Moreover, the knowledge of the absorption coefficient provides an easier, reliable, and faster method of investigation for generic CNT film thickness. In addition, the absorption coefficient leads to the information of the absorption length for SWCNT and MWCNT films, which is a physical quantity of fundamental interest for optoelectronic applications, such as light emitting diodes, photovoltaics, and in general light absorbers.

Published
2015

47. Direct evidence of chemically inhomogeneous, nanostructured, Si-O buried interfaces and their effect on the efficiency of carbon nanotube/Si photovoltaic heterojunctions

Author

Pintossi, C, Salvinelli, G, Drera, G, Pagliara, S, Sangaletti, L, Del Gobbo, S, Morbidoni, M, Scarselli, M, De Crescenzi, M, Castrucci, P, Pintossi C, Salvinelli G, Drera G, Pagliara S, Sangaletti L, Del Gobbo S, Morbidoni M, Scarselli M, De Crescenzi M, Castrucci P, Pintossi, C, Salvinelli, G, Drera, G, Pagliara, S, Sangaletti, L, Del Gobbo, S, Morbidoni, M, Scarselli, M, De Crescenzi, M, Castrucci, P, Pintossi C, Salvinelli G, Drera G, Pagliara S, Sangaletti L, Del Gobbo S, Morbidoni M, Scarselli M, De Crescenzi M, and Castrucci P

Abstract

An angle resolved X-ray photoemission study of carbon nanotube/silicon hybrid photovoltaic (PV) cells is reported, providing a direct probe of a chemically inhomogeneous, Si-O buried interface between the carbon nanotube (CNT) networked layer and the n-type Si substrate. By changing the photoelectron takeoff angle of the analyzer, a nondestructive in-depth profiling of a CNT/SiOx/SiO2/Si complex interface is achieved. Data are interpreted on the basis of an extensive modeling of the photoemission process from layered structures, which fully accounts for the depth distribution function of the photoemitted electrons. As X-ray photoemission spectroscopy provides direct access to the buried interface, the aging and the effects of chemical etching on the buried interface have been highlighted. This allowed us to show how the thickness and the composition of the buried interface can be related to the efficiency of the PV cell. The results clearly indicate that while SiO2 is related to an increase of the efficiency, acting as a buffer layer, SiOx is detrimental to cell performances, though it can be selectively removed by etching in HF vapors.

Published
2013

49. Vaccination against Clostridium difficile using toxin fragments: Observations and analysis in animal models

Author

Spencer, J, Leuzzi, R, Buckley, A, Irvine, J, Candlish, D, Scarselli, M, and Douce, GR

Abstract

Clostridium difficile is a major cause of antibiotic associated diarrhea. Recently, we have shown that effective protection can be mediated in hamsters through the inclusion of specific recombinant fragments from toxin A and B in a systemically delivered vaccine. Interestingly while neutralizing antibodies to the binding domains of both toxin A and B are moderately protective, enhanced survival is observed when fragments from the glucosyltransferase region of toxin B replace those from the binding domain of this toxin. In this addendum, we discuss additional information that has been derived from such vaccination studies. This includes observations on efficacy and cross-protection against different ribotypes mediated by these vaccines and the challenges that remain for a vaccine which prevents clinical symptoms but not colonization. The use and value of vaccination both in the prevention of infection and for treatment of disease relapse will be discussed.

Published
2014

50. Morphological, chemical and electrical characterization of Pt-SnO2 thin film grown on rough and mechanically polished Al2O3 substrates

Author

Cricenti, A., Generosi, R., Scarselli, M. A., Perfetti, P., Siciliano, P., Serra, A., Tepore, A., Coluzza, C., Almeida, J., Margaritondo, G., Cricenti, A, Generosi, R, Scarselli M., A, Perfetti, P, Siciliano, Pietro, Serra, Antonio, Tepore, Antonio, Coluzza, C, Almeida, J, Margaritondo, G., Cricenti, A., Generosi, R., Scarselli, M. A., Perfetti, P., Siciliano, P., Tepore, A., Almeida, J., and Coluzza, G.

Subjects
ATOMIC-FORCE MICROSCOPE, METALS
Abstract

Surface chemical composition and topography of Pt-SnO2 thin films grown by radiofrequency (rf) reactive sputtering on two different Al2O3 substrates (rough and mechanically polished) were investigated by x-ray photoemission spectromicroscopy (XPSM) and atomic force microscopy (AFM). XPSM measurements showed, for both substrates, a homogeneous chemical composition of the Pt-SnO2 films. The only difference was the observation of different charging in different areas of the film grown on rough alumina substrates, due, presumably, to a non-continuous Pt-SnO2 film. AFM showed large topographical variations (several hundred nanometres) for the Pt-SnO2 film grown on a rough alumina substrate, due to structures already present on the substrate. The estimated roughness of the sensor was 20% larger for the Pt-SnO2 film grown on a rough alumina substrate. The response to carbon monoxide was 30% higher for the sensor grown on rough alumina than that on polished alumina, reflecting the larger exposed sensor area.

Published
1996

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