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Your search keyword '"Scheglov, M.P."' showing total 17 results
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17 results on '"Scheglov, M.P."'

9. Charge carrier self-organization in ferroelectromagnetic semiconductors Eu₀.₈Ce₀.₂Mn₂O₅

Author

Golovenchits, E.I., Sanina, V.A., Zalesskii, V.G., and Scheglov, M.P.

Subjects
Condensed Matter::Materials Science, Магнитоэлектрические эффекты в сегнетомагнетиках, Condensed Matter::Strongly Correlated Electrons
Abstract

The state with a giant permittivity (ε~10⁴) and ferromagnetism has been observed above 185 K (including room temperature) in single crystals of diluted semiconductor manganite–ferroelectromagnetic Eu₀.₈Ce₀.₂Mn₂O₅ in the investigations of x-ray diffraction, dielectric and magnetic properties, conductivity. X-ray diffraction study has revealed a layered superstructure along the c axis at room temperature. A model of the state with a giant ε including as-grown 2D layers with doping impurities, charge carriers, and double-exchange coupled Mn³⁺–Mn⁴⁺ ion pairs is suggested. At low temperatures these layers form isolated electrically neutral small-size 1D superlattices, in which de Haas van Alphen oscillations were observed. As temperature grows and hopping conductivity increases, the charge carrier self-organization in the crystal cause formation of a layered superstructure consisting of charged layers (with an excess Mn³⁺ concentration) alternating with dielectric layers of the initial crystal — the ferroelectricity state due to charge ordering. Ferromagnetism results from double exchange between Mn³⁺ and Mn⁴⁺ ions through of charge carriers in the charged layers.

Published
2010

12. Growth of SiC and GaN on Porous Buffer Layers

Author

Mynbaeva, Marina G., primary, Savkina, N.S., additional, Tregubova, Alla S., additional, Scheglov, M.P., additional, Lebedev, Alexander A., additional, Zubrilov, A.S., additional, Titkov, A., additional, Kryganovski, A., additional, Mynbaev, K., additional, Seredova, Natasha V., additional, Tsvetkov, D., additional, Stepanov, S., additional, Cherenkov, A.E., additional, Kotousova, I., additional, and Dmitriev, Vladimir, additional

Published
2000
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17. 6H(n+)/3C(n)/6H(p+) - SiC Structures Grown by Sublimation Epitaxy

Author

Strel'chuk, Anatoly M., Lebedev, A.A., Cherenkov, A.E., Kuznetsov, Alexey N., Tregubova, A.S., Scheglov, M.P., Sorokin, L.M., Yoneda, S., and Nishino, Shigehiro

Abstract

Investigation of the multilayer 6H(n+)/3C(n)/6H(p+)-SiC heterostructure grown by sublimation epitaxy show that the injection electroluminescence (IEL) in the green region (hνmax≈2.30-2.35eV) of spectrum is dominant. This band is close to the electroluminescence peak due to defects in 6H-SiC but also can be due to free exciton annihilation in a quantum well in 3C-SiC at the 6H/3C-SiC heterointerface. At high current the IEL peak at hνmax≈2.9 eV is found. This peak (and also two another peaks in blue part of spectra: hνmax≈2.6 eV and hνmax≈2.72 eV) can be attributed to recombination in 6H-SiC. The forward current-voltage characteristics for best structures are close to those for ideal 6H-SiC pn homostructure and characterized by abrupt breakdown. A lot of structures are characterized by barrier type excess current. Structure in the region of evident 3C-SiC inclusion is characterized by high forward and reverse excess currents.

Published
2005
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