33 results on '"Scheibler, H. E."'
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2. The measurement of photocathode transverse energy distribution curves (TEDCs) using the transverse energy spread spectrometer (TESS) experimental system
3. Optical phonon cascade emission by photoelectrons at a p-GaN (Cs,O)–vacuum interface
4. Light trapping and subbandgap maximum in photoemission quantum yield spectra of p-GaAs(Cs,O)
5. Nonlocal and local mechanisms of cesium-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface
6. Non–monotonic behaviour in the mean transverse energy of electrons emitted from a reflection–mode p-GaAs(Cs,O) photocathode during its QE degradation through oxygen exposure
7. Evolution of the transverse and longitudinal energy distributions of electrons emitted from a GaAsP photocathode as a function of its degradation state.
8. Refraction of thermalized electrons emitted ballistically into vacuum from p +-GaAs-(Cs,O)
9. The increase in band bending at the p-GaN(Cs) – vacuum interface due to the photoemission from surface states
10. Surface photovoltage in a p-GaN(Cs) photocathode
11. Photoelectron scattering in a p-GaN(Cs,O) photocathode
12. Long term operation of high quantum efficiency GaAs(Cs,O) photocathodes using multiple recleaning by atomic hydrogen.
13. Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films.
14. p-GaAs(Cs,O)-photocathodes: Demarcation of domains of validity for practical models of the activation layer
15. Kinetics of band bending and electron affinity at GaAs(001) surface with nonequilibrium cesium overlayers
16. Development of high brightness, high repetition rate photoelectron injectors at STFC Daresbury Laboratory
17. Spectroscopy of systems with time variable parameters: photoreflectance of GaAs(001) under cesium adsorption
18. Compact vacuum tubes with GaAs(Cs,O) photocathodes for studying spin-dependent phenomena
19. Cooled Transmission-Mode NEA-Photocathode with a Band-Graded Active Layer for High Brightness Electron Source
20. New Insight In The Metal-Semiconductor Interface Formation: Generation And Removal Of Donor-Like Surface States On Cs/p-GaAs(001)
21. Semiconductor surfaces with negative electron affinity
22. QUALITY CHARACTERIZATION OF NEA-PHOTOCATHODE FOR PES BY MEANS OF PHOTOEMISSION FROM DEFECT STATES
23. Atomic and electronic engineering of p-GaAs-(Cs, O)-vacuum interface.
24. Photocurrent saturation at GaAs(Cs,O)
25. Elucidation of activation layer model by means of measurements of photoelectron energy distribution curves
26. Fourier transform analysis of electromodulation spectra: Effects of the modulation amplitude
27. Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films
28. Fourier resolution of surface and interface contributions to photoreflectance spectra of multilayered structures
29. Evolution of electronic properties at the p‐GaAs(Cs,O) surface during negative electron affinity state formation
30. Elucidation of Photoreflectance Mechanisms by Phase Resolution Spectroscopy: Application to Delta‐Doped GaAs
31. Development of spin polarized electron photocathodes: GaAs-GaAsP superlattice and GaAs-AlGaAs superlattice with DBR.
32. Unpinned behavior of the Fermi level and photovoltage on p-(100)GaAs surface facilitated by deposition of cesium
33. Emission of spin-polarized electrons from strained InGaP and InGaAsP photocathodes
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