Search

38th European Photovoltaic Solar Energy Conference and Exhibition; 578-582, This paper proposes a grey box model for cell-level simulation of potential induced degradation of the shunting type (PID-s) by extending a physics-based energy yield simulation framework. The leakage current is first computed using a physics-based approach based on an equivalent frame-to-cell electric circuit composed of temperature and humidity dependent resistances. Then, the increase of PID-s degradation due to leakage current is retrieved from measurements of PID-s evolution performed on polycSi cells. Finally, IV-curves of cells affected by PID-s are approximated by modifying the IV-curve of a PID-free cell using measurements of short circuit current and open-circuit voltage decrease with PID-s. A first comparison of simulated versus measured final PID-s levels is reported for a PV string after nine years of operation. The advantage of our grey box model over an empirical model is the possibility to investigate changes in material properties without the need for new measurements and to provide quantitative energy yield loss estimates depending on climate and system design.

In this presentation, one-year-long measurements from a test setup installed on the roof of EnergyVille (Genk, Belgium) are analysed and compared with simulations performed using the energy yield simulation framework developed at imec. Such experimental setup allows understanding of real-world expected performance of both monofacial and bifacial PV modules installed in a built environment, with an in-depth view onbothoptical, thermal and electrical behavior. It also allows to validate imec simulation framework performance and to understand what are the key features to take into account for accurate simulation, as well as to identifyeventual areas of improvement.