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We report the thermoelectric characterization of Ru2Si3 thin films. Ruthenium (VI)-silicide was formed via silicidation by rapid thermal processing of ruthenium on amorphous, undoped silicon of different thicknesses (sub-50 nm). 300 mm wafer level processes were applied, utilizing physical and chemical vapor deposition methods. High-temperature-XRD, energy dispersive x-ray spectroscopy, transmission electron microscopy, and time-of-flight secondary ion mass spectrometry confirm the formation of single-phase Ru2Si3 thin films. Thermoelectric measurements reveal exceptionally high Seebeck coefficients of up to 1.5 mV/K close to room temperature in dependence of adjustable oxide nanoskins. Due to the thermal stability of the nanoskins, fine-tuning of the thermoelectric properties by rapid thermal processing could be applied in a large temperature range. [ABSTRACT FROM AUTHOR]