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Investigates the low-voltage power capabilities of a low-cost high-performance silicon bipolar amplifier. Optimization of the emitter finger layout; Effect of the emitter distributed resistance on the current capability of long-emitter bipolar transistors; Derivation of an analytical model for a proper device design.

A high-performance bipolar-CMOS-DMOS (BCD) monolithic envelope amplifier for micro-base-station power amplifiers (PAs) is presented. Measurement of the BCD high-voltage (V DD=15\ {\V}) envelope amplifier shows an efficiency of 72% using 7.7-dB peak-to-average ratio WCDMA input signals at an average envelope amplifier output power above 3 W. A WCDMA envelope-tracking RF PA at 2.14 GHz, including a GaN field-effect transistor RF stage, has an overall drain efficiency above 51%, with a normalized power root-mean-square error below 1.2% and an adjacent channel leakage ratio of -49 dBc at 5-MHz offset using memory-effect mitigation digital pre-distortion, at an average output power above 2 W and a gain of 10 dB. [ABSTRACT FROM PUBLISHER]

A single-stage stacked field-effect transistor (FET) linear power amplifier (PA) is demonstrated using 0.28-μm 2.5-V standard 110 FETs in a 0.13-μm silicon-on-insulator (SOI) CMOS technology. To overcome the low breakdown voltage limit of MOSFETs, a stacked-FET structure is employed, where four transistors are connected in series so that their output voltage swings are added in phase. With a 6.5-V supply, the measured PA achieves a small-signal gain of 14.6 dB, a saturated output power of 32.4 dBm, and a maximum power-added efficiency (PAE) of 47% at 1.9 GHz. Using a reverse-link IS-95 code division multiple access modulated signal, the PA shows an average output power of up to 28.7 dBm with a PAE of 41.2% while meeting the adjacent channel power ratio requirement. Using an uplink wideband code division multiple access modulated signal, the PA shows an average output power of up to 29.4 dBm with a PAE of 41.4% while meeting the adjacent channel leakage ratio requirement. The stacked-FET PA is designed to withstand up to 9 V of supply voltage before reaching its breakdown limit. This is the first reported stacked-FET linear PA in submicrometer SOI CMOS technology that delivers watt-level output power in the gigahertz frequency range with efficiency and linearity performance comparable to those of GaAs-based PAs. [ABSTRACT FROM AUTHOR]

We report the molecular findings in a child presenting with sideroblastic anemia and proximal tubulopathy. Analysis of mitochondrial DNA (mtDNA) from fibroblasts showed the presence of a 3.3-kb single deletion in 50% of the genomes. This mutation is, unlike other previously reported deletions in tubulopathy patients, not flanked by direct repeat sequences but by palindrome sequences at the deletion breakpoints, suggesting an unusual mechanism for production of deletion. These findings further expand our knowledge of the syndrome of anemia and tubulopathy due to single deletions of mtDNA. [ABSTRACT FROM AUTHOR]