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In this work, two methods for fabrication of composite conductive films, consisting of single walled carbon nanotubes (SWCNTs) and PEDOT:PSS, in order to obtain films with high conductivity and transparency for their use in solar cell structures based on Si have been compared. The thickness and optical parameters of the films were determined using the spectro-ellipsometric measurements within the spectral range 0.6…5.0 eV. The electrophysical parameters were obtained from the four-point probe measurements. Our results showed that the method for deposition of SWCNTs and PEDOT:PSS in layers enables to obtain films with a much higher conductivity (220…306 S/cm) as compared to the method of applying a film from their mixture (6…209 S/cm).

Multiple repeated procedure of spin-coating, thermal annealing and midcycle washing of the non-conductive PSS component was developed to fabricate the multilayer PEDOT:PSS films. A 4–5 times enhanc...

Au-GaAs metal-semiconductor composite microstructures have been prepared by an anisotropic etching of n-GaAs (100) wafers doped with Te (1016 to 1017 cm-3) with subsequent photostimulated chemical deposition of noble metal (Au) on formed semiconductor quasigratings. The microrelief topology of GaAs surface is controlled by the anisotropic etching conditions. Au metal was deposited on the structured GaAs surface as randomly placed nanoparticles of various shape and size and/or nanowires on the top of the hills of formed semiconductor microstructure. As the number of Au nanoparticles increases, they tend to localize on the ledges of the GaAs microrelief forming a system of approximately parallel nanowires. Obtained periodic structures with submicron to microns periods without Au nanoparticles and with deposited nanoparticles have been studied by means of scanning electron microscopy, optical spectroscopy (photoluminescence spectroscopy at room temperature), and photoelectric measurements. The decrease of the relative intensity of main photoluminescence band for samples with Au nanostructures compared to ones without nanoparticles deposition and simultaniously changes of the shape of photocurrent spectra of Au-GaAs microstructures have been observed. Such correlation in behaviour of measured spectra make formed Au-GaA metal-semiconductor microstructures perspective for the application in plasmonic photovoltaics.

Molybdenum oxide thin films were synthesized by reactive ion beam sputtering technique. The effect of deposition temperature and annealing on surface morphology, electrical and optical parameters of molybdenum oxide thin films and heterojunctions based on them were determined. In particular, obtained thin films exhibit photosensitive properties (photo-sensitivity coefficient is about 200 μA/1mV), heterojunctions based on them are characterized by the rectifying properties (rectification coefficient is almost 300 at applied voltage of 0.5V) and photovoltaic properties (open-circuit voltage is 215 mV and short-circuit current with one point contact is up to 2.4 mA).

Surface plasmon resonance (SPR) is a proven technique in sensorics. Wide application of the method is still limited by a necessity of a complex optical equipment using special dispersion elements like a prism or diffraction grating (DG). We have implemented a novel and inexpensive way for fabrication of the DG on a silicon substrate using femtosecond laser ablation (highly regular laser-induced periodic surface structures - HR-LIPSS) technique. The potential of the method has been illustrated for the case of detection of uranium in water. For this purpose, fabricated gratings were coated with thermally evaporated nanofilms of gold and then used as substrates for deposition of nanoparticles of bioinspired polymer polydopamine (PDA) highly selective to uranium under neutral pH. Synergistic combination of the advanced nanofabrication and SPR sensing techniques with advanced PDA ligand allowed preparation of sensing elements with a sub-microgram sensitivity to uranium (∼1.0 x 10-7 g/cm2). Even though the results reported here are just a proof of concept, we believe the approach can be expanded to selective detection of various types of analytes (heavy metals, biomolecules, viruses etc.) under different environments (water, air, aerosols) in the future.

High transparent and conductive undoped ZnO thin films deposited by reactive ion-beam sputtering on Si and glass substrates were studied. Our films were found to be polycrystalline ones having a hexagonal wurtzite structure with c-axis preferred orientation. In the course of experiments employing X-ray diffraction, energy dispersive X-ray analysis, multi-angle spectral ellipsometry, atomic force microscopy, optical transmission/reflection and electrical measurements, the influences of substrate temperature and accelerating voltage on the structural, optical and electrical properties of ZnO thin films were revealed and discussed. It was shown that the beneficial conditions for the growth of high-quality film are as follows: substrate temperature ranging in 200–250 °C and acceleration voltage ranging in 5–6 keV. O-rich condition of deposition helped to obtain p-type conductivity, which, however, was not stable over time. The best films with thickness nearly 100 nm demonstrated resistivities of ∼2 mOhm∙cm, being 86% transparent in visible light. Also, free electron concentration of ∼2 × 1020 cm−3 and mobility of ∼17 cm2 V−1s−1 were achieved. All this implies that the as-grown undoped ZnO films are promising for the application as high conductive transparent electrodes.

The surface plasmon resonance properties of highly regular laser-induced periodic surface structures (HR-LIPSSs) on Si, functionalized with Au nanoparticles (NPs), were investigated. In particular, the spectral dependencies of polarized light reflectance at various angles of incidence were measured and discussed. It is found that the deposition of Au NPs on such periodically textured substrates leads to significant enhancement of the plasmon resonance properties, compared to that measured on planar ones. This effect can be used to improve the efficiency of localized-plasmon-resonance-based sensors.

Triangular gold microprisms and spherical silica nanoparticles with attached gold nano-islands were examined as an active nanostructures for the surface enhanced Raman and infrared spectroscopy. These particles were probed for the detection of pyridostigmine bromide as a safe analog of military compound sarin. Raman and infrared spectral bands of the pyridostigmine bromide were measured. Detailed correlation of obtained spectral bands with specific vibrations in pyridostigmine bromide was done. Silica nanoparticles with attached gold nano-islands showed more essential enhancement of the Raman signal than gold microcrystals. The reasons of such behaviour are discussed.

The possibility of increasing the photosensitivity of organic heterostructures by using the bilayer transparent ITO electrodes with organic conducting polymer polyaniline, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) complex (PEDOT:PSS) and CuI has been verified experimentally. Photosensitive n-type organic semiconductor N,N′-dimethyl-3,4,9,10-perylenetetracarboxylic acid diimide (МРР) and p-type pentacene were chosen as components of these heterostructures. Usage of ITO/PEDOT:PSS bilayer electrodes leads to increasing the photovoltaic sensitivity of these heterostructures by 2–3 orders and by 1–2 orders when using CuI due to decreasing the recombination of excitons and increasing the potential barrier heights on the interface between the organic semiconductor and layers of PEDOT:PSS and CuI.

The effect of single-wall carbon nanotube (SWCNT) nanolayers deposited on Si substrate on optical, photoelectric and electric properties of Au/n-Si structures has been investigated. Highly purified SWСNTs were prepared by the arc-discharge method. Significant enhancement of the photocurrent (especially in the long-wave range) and the photoelectric conversion efficiency was found for structures with SWСNT and its mechanism was analyzed taking into account optical and electric characteristics of structures.

This study reports on the employment of the interference lithography (IL) technique, using photoresist based on the chalcogenide glass (ChG) films, for fabrication of one-dimensional (gratings) and two-dimensional (arrays) periodic plasmonic structures on the surface of glass plates. The IL technique was optimized for patterning of the Au and Al layers and formation of gratings and arrays with a spatial frequency of 2000 mm(-1). Optical properties of obtained structures were studied using measurements of spectral and angular dependence of transmission and reflection of polarized light. It was shown that the spectral and angular position of the surface plasmon polariton and local surface plasmon resonance, which are observed in these samples, can be adjusted over a wide range by selecting the geometric parameters of structures and technological modes of their manufacturing.

A novel electrochemical procedure for preparation of the very stable, thin modifying layer onto the n-type Si surface was elaborated. The modification consisted of platinum or/and ruthenium ultrafine particles etched into the porous Si film. A unique sequence of modifications was applied: at first the metal particles were evenly electrodeposited onto a flat silicon surface, and in the next electrochemical step the porous structure was produced. The platinum coverage and mean particle diameter were well controlled by the electrochemical programs. All the attempts and progress in modifications were monitored by scanning electron microscope (SEM) observations. Furthermore, the materials obtained were compared with the non-porous, Pt or/and Ru modified electrodes by testing them as anodes in the photoelectrochemical (PEC) cell with organic Br2/2Br− solution. In general, the porous photo-anodes gave higher output powers and the light-to-electricity conversion efficiencies. The best performance was observed for the PEC cell employing the porous anode with sequentially electrodeposited Ru and Pt particles, respectively (PS-Si/Ru/Pt). 1 This cell maintained good electrical parameter values during the 2-week tests, having a maximum output power equal to 0.23 mW/cm2 and a cell conversion efficiency of 8.5%. The PS-Si/Pt photo-anode gained 0.21 mW/cm2 and 7.8%, respectively.

Optical and photoelectrical studies were performed on octane-1,8-dithiol cross-linked fullerene films, with supported gold nanoparticles (C 60 –DT–Au). According to high-resolution transmission electron microscopy observations, the average size of obtained gold nanoparticles was about 5 nm, and the shape was spherical. The comparative investigation of optical properties of pristine and cross-linked with octane-1,8-dithiol C 60 films, decorated with gold nanoparticles, found the difference in the extinction coefficient spectra, which was observed also in the photocurrent spectra of barrier heterostructure Au/C 60 /Si. The analysis of dark current–voltage characteristics for Au/C 60 /Si heterostructures showed that the model for them includes the barrier at the C 60 /Si interface and internal barriers in the C 60 layer, caused by the trapping centers. The hopping mechanism of the current transport in the C 60 layer was supplemented with the Poole–Frenkel emission process on these centers, with the barrier height greater for the fullerene C 60 film cross-linked with octane-1,8-dithiol.

Optical properties of a one-dimensional periodic array of subwavelength metal nanowires in the regime of local plasmon excitation are investigated experimentally and theoretically. Both gas and liquid sensing by one-dimensional gold nanowires on a glass substrate produced by holographic lithography are demonstrated experimentally. The obtained spectral sensitivity of a local plasmon sensor to the refractive index of the environment is found comparable to that of a surface plasmon polariton sensor based on the grating coupler effect. The influence of nanowire shape on spectral sensitivity is studied theoretically in a differential formalism framework using a curvilinear coordinate transformation for triangular, trapezoidal, and rectangular cross sections of the nanowires. For nanowires with trapezoidal cross section, theoretical calculations for the spectral sensitivity to variation of the refractive index of the environment agree well with experimental data.

Reactive deposition epitaxy was used to prepare β-FeSi2 nanodots on a Si(001) surface. The influence of annealing on optical properties has been studied. Annealing increases the particle size and decreases absorption. The indirect optical transition at 0.84–0.89 eV dominates the absorption spectra below 1.3–1.5 eV. The film with smaller nanoparticles exhibits higher absorption with direct optical transition energies in the 1.3–1.5 eV range. It suggests that direct transition is dominant only in small (around 3 nm diameter) β-FeSi2 nanodots. Larger particles are dominated by the indirect optical transition.

The effect of texturing interfaces on the optical and photoelectric properties of anisotype and isotype organic (OS)/inorganic (IS) semiconductor heterojunctions has been investigated. p-(Pentacene) and n-(methyl perylene pigment, MPP) type organic semiconductor layers were evaporated on n-GaAs and p-InP substrates, respectively, with flat substrates and the substrates textured by chemical anisotropicetching (with a microrelief of the quasigrating type). The spectra of the light reflectance and the short-circuit photocurrent for the Au/OS/IS heterostructure were measured and analyzed to distinguish the contribution of the photocurrent generated in the OS layer. A considerable enhancement of the photocurrent generated in both inorganic and organic semiconductors was found for structures with textured interface.

The fluctuation model with Gaussian-type of barrier heights distribution that was recently applied successfully to explain the dark current–voltage characteristics of Au/GaAs barrier structure with microrelief interface, in this paper is extended to photoelectric characteristics. In addition to the change of the Richardson constant and the apparent temperature coefficient of barrier height we predict the decrease of the open-circuit voltage of photodetectors or solar cells. The theoretical predictions have been verified experimentally on the Au/GaAs Schottky barriers with dendrite-like or quasigrating interface prepared by wet anisotropic etching.

The effect of 60Co gamma irradiation at doses of 103-2×105 Gy on the photoconversion and dark I-V characteristics of Au/GaAs surface-barrier solar cells (SCs) is studied. The morphology of the interface microrelief is varied to reach the highest photoconversion efficiency. Of the two types of microrelief morphology (dendritic and quasi-grating) obtained by the chemical anisotropic etching of n-(100)GaAs, the latter is more promising, particularly for SCs designed for space application, since the associated SCs offer higher efficiency and radiation resistance.

The effect of the morphology of Au/GaAs interface microrelief, prepared by chemical anisotropic etching, on current flow mechanism, electronic and recombination properties of interface has been investigated. Simulation of I – V curves and optical transmittance of light into semiconductor was made on the basis of the developed theories taking into account the barrier height distribution and the effect of scattering of light by low microrelief.

The photocurrent enhancement effect caused by Au and Ag nanoparticles for GaAs-based photovoltaic structures of surface barrier or p-n junction type with microtextured interfaces has been investigated in dependence on the conditions of nanoparticles deposition and, respectively, on the shape and local dielectric environment of obtained nanoparticle arrays. Three nanoparticle deposition methods have been checked: 1) photoinduced chemical deposition of Au from aqueous AuCl3 solution forming nanowires on the ridges of quasigrating-type surface microrelief, 2) deposition of Ag nanoparticles from colloidal suspension on the GaAs substrate covered with poly(vinylpyridine), and 3) drop and dry deposition of Au/SiO2 core-shell nanoparticles from aqueous colloid solution. The comprehensive investigation of optical reflectance, photoelectric, and electrical characteristics of the fabricated barrier structures has shown the highest photovoltaic parameters for surface microrelief of quasigrating-type and electroless Au nanoparticle deposition. The analysis of characteristics obtained allowed us also to define the mechanisms of the total photocurrent enhancement.

(a)InstituteforPhysicsofSemiconductors,NationalAcademyofSciences,ProspektNauki45,03028Kiev-28,Ukraine(b)IlmenauTechnicalUniversity,Ilmenau,Germany(c)InstituteofPhysics,PolishAcademyofSciences,Al.Lotnikov32,PL-02-668Warsaw,Poland(Received July 21, 2000; in revised form December 18, 2000; accepted January 3, 2001)Subject classification: 68.65.Ac; 73.40.Ns; 78.66.Bz; 78.68.+m; S4; S7.12This article is devoted to the investigation of multilayer diffraction grating of Al/GaAs using spec-troscopic ellipsometry. The ellipsometric parameters y and D were measured under conditions ofsurface polariton excitation, as well. Various representations of the dielectric function for the ana-lysis of optical data of Al films were examined. The representation using the Lorentzian oscillatorapproximation appears to be well-suited for this aim. The optical constants of thin Al films, ob-tained by the two methods, usual ellipsometry and polariton reflection spectroscopy, are compared.The measured optical constants were used to optimize the photodetector performance in the spec-tral range of interest.Stat#posv§enaissledovaniˇmnogoslojnyhdiffrakcionnyhrexetokmetodomspek-tral#noj+llipsometrii.*llipsometriqeskieparametryy iD takweizmerlis#vus-lovih vozbuwdeni poverhnostnyh +lektromagnitnyh voln. Byli ispol#zovany ne-skol#kosposobovopisanidi+lektriqeskojfunkciidlanalizaoptiqeskihsvojstv Alplenok. Pokazano, qto metod Lorentcovskih oscilltorov vlets naibolee pod-hod§im.Sopostavlˇtsoptiqeskiekonstanty plenok Al,poluqennyedvummeto-dami,obyqnojellipsometriiipolritonnojspektroskopiiotraweni.Izmerennyeoptiqeskiekonstantybyliispol#zovanydloptimizaciiparametrovfotodetektorovvissleduemojoblastispektra.

Application of the evanescent wave phenomena (e.g. surface plasmon resonance) in the chemical and biochemical sensors provides both optimal conditions for registration of specific interactions and high sensitivity. At the same time, the stability and reproducibility of parameters of a thin gold film (where the plasmon oscillations occur) are key problems for both (i) optimal transformation of biochemical information into the signal that is convenient for further treatment and (ii) the formation of artificial interfacial architectures. The paper presents results concerning the study of the deposition process temperature regimes influence on optical properties and structure of thin gold films. Morphological and topographic features of the thin film structures were analyzed using X-ray diffraction and atomic force microscopy, respectively. It is shown that the simple procedure of the low temperature annealing (at ~ 120°C) provides optimum parameters of thin gold films in view of their application as physical transducers in optical biosensors. Finally, the SPR transducer was fabricated with high sensitive elements used in the device «PLASMON-4M» elaborated in the Institute of Semiconductor Physics (NAS of Ukraine).

This paper is devoted to the surface characterization of phase diffraction gratings which are the key optical components of optochemical sensors. Surface plasmon resonance (SPR) in a Schottky junction with the diffraction grating at the interface is used as a basic principle underlying the device operation. With the aim of optimization of its technical parameters, the optical characterization of thin metal films is necessary. The adequate characterization tools were demonstrated: variable angle spectroscopic ellipsometry (VASE); atomic force microscopy (AFM); reflectance/transmittance spectroscopy; spectral and angular characteristics of Schottky junction photoresponse. Along with investigation technique, the most physically correct theoretical model (Bruggeman-EMA) for describing the optical and structural features of multilayer systems was employed. Potentialities of the optochemical sensor have been demonstrated as well.

This report is devoted to investigation of Au–GaAs microrelief interfaces, prepared by anisotropic chemical etching, in comparison with flat ones. The microstructure of microrelief was revealed by SEM and AFM techniques. The comprehensive investigations of electric and photoelectric characteristics of Schottky barriers allow us to determine the electronic structure of the Au–GaAs interface (the recombination rate, the rate of charge exchange, the energy spectrum of surface electronic states, etc.). It is confirmed the better structure perfection of the anisotropic etched interface in comparison with flat one.

Simulation of the photocurrent of surface-barrier structures (SBS) with texturized interface has been performed on the basis of obtained theoretical expression for internal quantum efficiency of homogeneous SBS and the model of parallelly connected diodes. The role of various sources of recombination losses (in the semiconductor, at the interface and due to the emission of majority carriers into the metal) in solar energy convertors has been analyzed. The complex method of characterization of SBS with texturized interface is proposed that includes an analysis of optical, electric and photoelectric characteristics. The possibility to increase the photosensitivity of the Au/GaAs SBS due to texturization and sulfur passivation of the interface for two types of microrelief (dendritic and quasigrating) obtained by wet anisotropic etching has been investigated. The morphology and statistical geometric characteristics of the interface were investigated by atomic force microscopy (AFM). The obtained results allowed to determine the change of optical and electronic (recombination) parameters of the interface caused by the used processing (texturization, passivation).

The characteristic features of the field dependence of the short-circuit photocurrent of real Schottky barriers based on strongly doped semiconductors under conditions of an oscillatory dependence of the light absorption coefficient a on the field intensity in the space-charge region and the photon energy (hν>E g ) are analyzed. An analytical expression is obtained for the dependence of the photocurrent on the thickness W of the space-charge region when the condition αW≪1 is satisfied. An improved method is proposed for determining the diffusion length of minority charge carriers by analyzing the dependence I p (W) in the spectral region satisfying the conditions of applicability of the expressions obtained. Some improvements are also made in the method for distinguishing the capacitance of the space-charge region from the high-frequency capacitance of a real Schottky barrier. The method is tested on structures Au-GaAs with N d =4.5×1016–1×1018 cm−3. The method of determining L is checked independently on the basis of a theoretical descripion of the spectral dependence of the quantum efficiency of the structure.

The array of Au nanowires have been checked as front electrode for solar cell application with transparency about 80.5 % and low resistivity 10−4 Ohm·cm.

In this work new method for diffraction grating formation are suggested. This method allows to produce periodically corrugated thin metal films with transmittance strongly depends on the mutual correlation of two metal film interfaces with air and semiconductor. This could be the final stage of manufacturing of this type photodetector when all elements and circuits on the chip (like CCD matrix) are already formed.

The performance of ID-array of metallic nanowires for chemical sensing application is studied theoretically and experimentally. The calculations of the interaction of the incident light with the periodic system of nanowires are based on the differential formalism using curvilinear coordinate transformation. The influence of ensemble geometrical characteristic on system sensitivity was predicted. The shift of resonance curve due to change of system environment was observed experimentally.

The photocurrent of Schottky diodes (Au/GaAs) with different type of interface (diffraction gratings, quasigratings, with Au/SiO2 core-shell nanoparticles) has been studied. Significant contribution of surface plasmon-polaritons and local electromagnetic modes has been shown in all cases by analysis of experimental spectral dependencies of photocurrent and theoretical calculations of light transmittance into semiconductor.

We have investigated 1D nanosized metallic wires with subwavelength dimensions in which localized surface plasmon (LSP) and surface plasmon polariton (SPP) can exist. Elaboration of the localized surface plasmon resonance (LSPR) based device for scaling down to nanometric dimensions, which provide significant flexible design is the aim of this paper. Modeling of the interaction of the incident light with the periodic system of nanowires (differential formalism) and measurements of the optical (transmittance, extinction) properties of the structures under consideration were performed to reveal the general trends in the design of the gold nanostructure geometry to optimize sensitivity of sensor system.

An analysis is made of the influence of corrosion of a metal electrode (Ag) on the total photoresponse of a barrier structure with a corrugated interface and on the component associated with the excitation of a surface polariton. Current-voltage and ellipsometric measurements are used to determine the variation of the barrier parameters and the thickness of the upper electrode as a function of time.

We discuss the feasibility of controlling the photosensitivity of metal/thin intrinsic-oxide/semiconductor surface-barrier structures under conditions of excitation of surface polaritons. These structures may be used as polarization-sensitive photodetectors.

The paper is devoted to elaboration of an advanced polaritonic photodetector based on the metal (Au or Al)/semiconductor (GaAs or InP) surface barrier heterostructures (SBH). A basic principle underlying the device operation is surface plasmon resonance (SPR) in a SBH with the microrelief (quasigrating, grating and bigrating) at the interface. Influence of the microstructure of continuous metal films and of island films on the efficiency of photodetectors is also investigated.

A double metal layer system on the diffraction grating was used for increasing of efficiency of surface plasmon resonance (SPR) GaAs based photodetector. The design of it is based on commonly used thin metal films with optical constants that can be realized by using standard thermal evaporation techniques. The performance of detectors has been controlled over the wide range of visible spectrum by variation both geometric and structural parameters of diffraction grating. The sensitivity of the structures to changes in the angle of incidence, the wavelength, both the coating nature and index, etc. are presented.

The possibility to control photosensitivity of Au(ITO)/GaAs surface-barrier heterostructure by evaporated processing including texturation and passivation of interface on investigated. The complex method of their characteristic is proposed that included analysis of optical, electrical and photoelectric characteristics of structure. The obtained results allowed to determine the change of optical and recombination parameters of interface caused by investigated processing.

The new method of characterization of Schottky barrier surface polariton (SP waves based photodetectors is presented and its very promising ability of optimization of their parameters (diffusion length, Schottky barrier height electron and hole emission rates and surface recombination velocity, etc.) is shown.

This article is devoted to investigation of multilayer diffraction grating using spectroscopic ellipsometry. The present study demonstrates the capability of techniques used as a tool to obtain information about the possibilities to control of photon-surface plasmon coupling at a multilayer diffraction gratings and usefulness especially for optochemical sensors and photodetectors application.

A characterization program for multilayer gratings for sensors and photodetector applications have been designed and an examination of the multilayer gratings has been performed.

We investigated (i) morphology of the GaAs surface with a quasigrating-type microrelief and (ii) current flow mechanism in the Au/GaAs barrier structures formed on the above textured surface. Both Atomic Force Microscopy (AFM) and measurements of electrical (I-V and C-V) characteristics were used. We have found both semiconductor and interface parameters, as well as studied how they depend on /sup 60/Co /spl gamma/-irradiation in the 10/sup 3//spl divide/10/sup 7/ Gy dose range. The parameters measured were shown to be tolerant to such irradiation doses.

Schottky barrier structures based on nanoporous InP with inclusion of Au nanoparticles and evaporated semitransparent Au film have been made. The spectra of short-circuit photocurrent in the visible range and current-voltage characteristics have been measured. Prepared structures are characterized by increased photocurrent due to the microrelief interface and surface plasmon excitation in gold nanoparticles as well as increased surface recombination especially in the short wavelength region.

A new approach to the formation of a 1D planar periodicity on the front of a plasmonic photodetector based on Schottky barrier is proposed. It allows forming a 1D planar periodicity with corrugation at the “metal/environment” interface by laser interference lithography using embedded chalcogenide wires, whereas the “metal/semiconductor” interface is flat that leads to reducing of surface recombination losses at Shottky barrier in contrary to the conventional technology for forming corrugated metal films on the semiconductor surface requiring chemical etching of the semiconductor substrate. In this case, the metal film interfaces are quasi-anticorrelated as opposed to correlated ones in the conventional technology. It has been theoretically predicted that the polarization sensitivity (T p /T s ) strongly depends on the cross-sectional shape of chalcogenide wires and reaches a value of 8. Furthermore, it was theoretically found that the maximum sensitivity of the signal intensity on the environment refractive index is three times larger than for an equivalent structure obtained by conventional technology. Comparison of experimental data for the photocurrent in the case of two types of correlation between metal film interfaces demonstrates good agreement with numerical simulations.