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171 results on '"Shang, Zhongxia"'

2. A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Author

Lin, Zehao, Si, Mengwei, Askarpour, Vahid, Niu, Chang, Charnas, Adam, Shang, Zhongxia, Zhang, Yizhi, Hu, Yaoqiao, Zhang, Zhuocheng, Liao, Pai-Ying, Cho, Kyeongjae, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, and Ye, Peide D.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Physics - Applied Physics
Abstract

High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio frequency (RF) analog applications. In this work, we demonstrate an In2O3 transistor grown by atomic layer deposition (ALD) at back-end-of-line (BEOL) compatible temperatures with a record high drain current exceeding 10 A/mm, the performance of which is 2-3 times better than all known transistors with semiconductor channels. A record high transconductance of 4 S/mm is also achieved among all transistors with a planar structure. It is found that a high carrier density and high electron velocity both contribute to this remarkably high on-state performance in ALD In2O3 transistors, which is made possible by the high-quality oxide/oxide interface, the metal-like charge-neutrality-level (CNL) alignment, and the high band velocities induced by the low density-of-state (DOS). Experimental Hall, I-V and split C-V measurements at room temperature confirm a high carrier density up to 6-7*10^13 /cm2 and a high velocity of about 10^7 cm/s. Ultra-thin oxide semiconductors, with a CNL located deep inside the conduction band, represent a promising new direction for the search of alternative channel materials for high-performance semiconductor devices.

Published
2022
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3. A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/{\mu}m Drain Current

Author

Zhang, Zhuocheng, Lin, Zehao, Liao, Pai-Ying, Askarpour, Vahid, Dou, Hongyi, Shang, Zhongxia, Charnas, Adam, Si, Mengwei, Alajlouni, Sami, Noh, Jinhyun, Shakouri, Ali, Wang, Haiyan, Lundstrom, Mark, Maassen, Jesse, and Ye, Peide D.

Subjects
Physics - Applied Physics, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process. A maximum on-state current (ION) of 19.3 mA/{\mu}m (near 20 mA/{\mu}m) is achieved in an In2O3 GAA nanoribbon FET with a channel thickness (TIO) of 3.1 nm, channel length (Lch) of 40 nm, channel width (Wch) of 30 nm and dielectric HfO2 of 5 nm. The record high drain current obtained from an In2O3 FET is about one order of magnitude higher than any conventional single-channel semiconductor FETs. This extraordinary drain current and its related on-state performance demonstrate ALD In2O3 is a promising oxide semiconductor channel with great opportunities in BEOL compatible monolithic 3D integration.

Published
2022
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18. Enhanced Corrosion Protection of Printed Circuit Board Electronics using Cold Atmospheric Plasma-Assisted SiOxCoatings

Author

Kasi, Venkat, Tien, Jia-Huei, Rahman, Md Mahabubur, Rana, Muhammad Masud, Heredia Rivera, Ulisses Alberto, Shang, Zhongxia, Vidhyadhiraja, Advika, Zhang, Jingxuan, Youngblood, Jeffrey P., Bahr, David F., and Rahimi, Rahim

Abstract

The miniaturization and widespread deployment of electronic devices across diverse environments have heightened their vulnerability to corrosion, particularly affecting copper traces within printed circuit boards (PCBs). Conventional protective methods, such as conformal coatings, face challenges including the necessity for a critical thickness to ensure effective barrier properties and the requirement for multiple steps of drying and curing to eliminate solvent entrapment within polymer coatings. This study investigates cold atmospheric plasma (CAP) as an innovative technique for directly depositing ultrathin silicon oxide (SiOx) coatings onto copper surfaces to enhance corrosion protection in PCBs. A systematic investigation was undertaken to examine how the scanning speed of the CAP deposition head impacts the film quality and corrosion resistance. The research aims to determine the optimal scanning speed of the CAP deposition head that achieves complete surface coverage while promoting effective cross-linking and minimizing unreacted precursor entrapment, resulting in superior electrical barrier and mechanical properties. The CAP coating process demonstrated the capability of depositing SiOxonto copper surfaces at various thicknesses ranging from 70 to 1110 nm through a single deposition process by simply adjusting the scanning speed of the plasma head (5–75 mm/s). Evaluation of material corrosion barrier characteristics revealed that scanning speeds of 45 mm/s of the plasma deposition head provided an effective coating thickness of 140 nm, exhibiting superior corrosion resistance (30-fold) compared to that of uncoated copper. As a proof of concept, the efficacy of CAP-deposited SiOxcoatings was demonstrated by protecting an LED circuit in saltwater and by coating printed circuits for potential agricultural sensor applications. These CAP-deposited coatings offer performance comparable to or superior to traditional conformal polymeric coatings. This research presents CAP-deposited SiOxcoatings as a promising approach for effective and scalable corrosion protection in miniaturized electronics.

Published
2024
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30. Gradient nanostructured steel with superior tensile plasticity

Author

Shang, Zhongxia, primary, Sun, Tianyi, additional, Ding, Jie, additional, Richter, Nicholas A., additional, Heckman, Nathan M., additional, White, Benjamin C., additional, Boyce, Brad L., additional, Hattar, Khalid, additional, Wang, Haiyan, additional, and Zhang, Xinghang, additional

Published
2023
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31. Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In2O3 Thin-Film Transistors

Author

Niu, Chang, Lin, Zehao, Askarpour, Vahid, Zhang, Zhuocheng, Tan, Pukun, Si, Mengwei, Shang, Zhongxia, Zhang, Yizhi, Wang, Haiyan, Lundstrom, Mark S., Maassen, Jesse, and Ye, Peide D.

Abstract

As transistor dimensions reach the 3-nm node, interface and surface engineering emerges as critical considerations. Challenges introduced by reduced conductivity and mobility due to surface depletion significantly impact thickness scaling and contact performance. In this work, we report the surface accumulation in atomic layer deposition (ALD) grown In2O3 thin-film transistors (TFTs). The negative Schottky barrier enables an ultralow metal-to-semiconductor contact resistance of ${R}_{c} ={23.4} \Omega \, \mu \text { m}$ at electron charge density ${n}_{\text {2D}}={5.0} \times {{10}}^{{13}} \text { cm}^{-{2}}$ in a nanometer ultrathin In2O3 channel. The effect of film thickness and annealing on contact resistance is investigated. Ultralow contact resistivity $\rho _{c}\approx {1.3} \times {10}^{-{9}} \Omega \, \text {cm}^{{2}}$ and current transfer length ${L}_{T} \approx {2} \text { nm}$ are achieved in a 1-nm-thick film. The superior ohmic contact is made possible by the charge neutrality level (CNL) deeply aligned inside the conduction band for In2O3. Together with theoretical calculations, the Landauer quantum resistance limit of In2O3 is discussed. Furthermore, the ALD-grown In2O3 transistor is back-end-of-line (BEOL) compatible with a low thermal budget of 400 °C (even considering the optional O2 annealing). Our work demonstrates that In2O3 is also an up-and-coming candidate for ultra-scaled, high-performance BEOL transistors from even the contact engineering point of view.

Published
2024
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37. Exfoliation and Spray Deposition of Graphene Nanoplatelets in Ethyl Acetate and Acetone: Implications for Additive Manufacturing of Low-Cost Electrodes and Heat Sinks.

Author

Oduncu, Muhammed Ramazan, Ke, Zhifan, Zhao, Bingyuan, Shang, Zhongxia, Simpson, Robin, Wang, Haiyan, and Wei, Alexander

Abstract

Nonaqueous dispersions of graphene nanoplatelets (GrNPs) can be used to prepare thin films and coatings free of surfactants, but typically involve polar organic solvents with high boiling points and low exposure limits. Here, we describe the mechanochemical exfoliation and dispersion of GrNPs in volatile aprotic solvents such as ethyl acetate (EtOAc) and acetone, which rank favorably in green solvent selection guides. GrNPs in powder form were exfoliated with a solvent on a horizontal ball mill for 48 h and then sonicated at moderate power to produce suspensions in excess of 300 μg/mL with minimum loss of dispersion stability over 7 weeks at room temperature. Atomic force microscopy of individual particles indicates a median thickness and lateral width of 8–10 layers and 180 nm, respectively. GrNP films can be deposited by conventional airbrush equipment with a dry time of seconds and applied as layers and coatings that enhance the reproducibility and performance of electronic devices. We demonstrate the utility of spray-coated GrNPs as contact layers for low-cost electrochemical sensing with improvements in intrabatch reproducibility and as conformal coatings on metal heat sinks with enhanced rates of heat dissipation. [ABSTRACT FROM AUTHOR]

Published
2023
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39. In situ study on heavy ion irradiation induced microstructure evolution in single crystal Cu with nanovoids at elevated temperature

Author

Niu, Tongjun, primary, Rayaprolu, Sreekar, additional, Shang, Zhongxia, additional, Sun, Tianyi, additional, Fan, Cuncai, additional, Zhang, Yifan, additional, Shen, Chao, additional, Nasim, Md, additional, Chen, Wei-ying, additional, Li, Meimei, additional, Xue, Yexiang, additional, Wang, Haiyan, additional, El-Azab, Anter, additional, and Zhang, Xinghang, additional

Published
2022
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40. Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Author

Lin, Zehao, primary, Si, Mengwei, additional, Askarpour, Vahid, additional, Niu, Chang, additional, Charnas, Adam, additional, Shang, Zhongxia, additional, Zhang, Yizhi, additional, Hu, Yaoqiao, additional, Zhang, Zhuocheng, additional, Liao, Pai-Ying, additional, Cho, Kyeongjae, additional, Wang, Haiyan, additional, Lundstrom, Mark, additional, Maassen, Jesse, additional, and Ye, Peide D., additional

Published
2022
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41. A Gate-All-Around inO Nanoribbon FET With Near 20 mA/m Drain Current

Author

Zhang, Zhuocheng, primary, Lin, Zehao, additional, Liao, Pai-Ying, additional, Askarpour, Vahid, additional, Dou, Hongyi, additional, Shang, Zhongxia, additional, Charnas, Adam, additional, Si, Mengwei, additional, Alajlouni, Sami, additional, Shakouri, Ali, additional, Wang, Haiyan, additional, Lundstrom, Mark, additional, Maassen, Jesse, additional, and Ye, Peide D., additional

Published
2022
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45. Novel self-assembled two-dimensional layered oxide structure incorporated with Au nanoinclusions towards multifunctionalities

Author

Zhang, Di, primary, Gao, Xingyao, additional, Lu, Juanjuan, additional, Lu, Ping, additional, Deitz, Julia, additional, Shen, Jianan, additional, Dou, Hongyi, additional, He, Zihao, additional, Shang, Zhongxia, additional, Wade, C. Austin, additional, Zhang, Xinghang, additional, Chen, Aiping, additional, and Wang, Haiyan, additional

Published
2022
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48. MECHANICAL PROPERTIES AND RADIATION RESPONSE OF NANOSTRUCTURED FERRITIC-MARTENSITIC STEELS

Author

Shang, Zhongxia

Subjects
Metals and alloy materials, Materials engineering not elsewhere classified, Nanomaterials
Abstract

Structural metallic materials exposed to energetic particle bombardments often experience various types of irradiation-induced microstructural damage, thus degrading the mechanical properties of the materials in form of irradiation hardening and embrittlement. Nanostructured materials have shown better radiation resistance than their coarse-grained (CG) counterparts due to the existence of abundant defect sinks, such as grain boundaries, twin boundaries, and phase boundaries. However, recently developed nanocrystalline (NC) steels show limited room-temperature tensile ductility (< 1%), which may become a concern for their future application for nuclear reactors. The focus of this thesis is to explore the strength-ductility dilemma in modified 9Cr1Mo (T91) ferritic/martensitic (F/M) steel processed by thermomechanical treatment (TMT) and surface severe plastic deformation (SSPD) with an attempt to fabricate strong, ductile and radiation resistant F/M steels. Carbon partitioning between the quenched martensite and the other phases (bainitic ferrite or retained austenite) is critical for enhancing the strength and ductility of T91 steel. The tensile properties of partially tempered (PT) T91 steel can be tailored through introducing bainitic ferrite with high-density nanoscale transition carbides and refined lath martensite. In addition, retained austenite was introduced by increasing the carbon concentration of T91 steel to 0.6 wt.%. The carbon-modified steel processed by quenching partitioning (Q-P) treatment exhibits an ultrahigh strength, ~ 2 GPa, with a uniform strain of ~ 5% due to the existence of coherent carbides, ultrafine martensite and retained austenite. Meanwhile, surface mechanical grinding treatment (SMGT) on T91 steel reveals that introducing gradient structures on the sample surface contributes to a higher strength and an improved plasticity than its homogeneously structured counterpart. The deformation mechanism of the gradient structures was investigated with the assistance of quasi in situ crystal orientation analyses. Furthermore, ex situ He ion irradiation on the gradient T91 steel indicates that radiation-induced damage, such as bubble-induced swelling and irradiation hardening, were gradually mitigated by grain refinement from the sample surface to the center, resulting in superior radiation resistance. The results obtained from this thesis may facilitate the design and fabrication of strong, ductile and radiation-tolerant F/M steels.

Published
2022
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49. Integration of Highly Luminescent Lead Halide Perovskite Nanocrystals on Transparent Lead Halide Nanowire Waveguides through Morphological Transformation and Spontaneous Growth in Water

Author

Chen, Tao, primary, Wang, Chong, additional, Xing, Xinxin, additional, Qin, Zhaojun, additional, Qin, Fan, additional, Wang, Yanan, additional, Alam, Md Kamrul, additional, Hadjiev, Viktor G., additional, Yang, Guang, additional, Ye, Shuming, additional, Yang, Jie, additional, Wang, Rongfei, additional, Yue, Shuai, additional, Zhang, Di, additional, Shang, Zhongxia, additional, Robles‐Hernandez, Francisco C., additional, Calderon, Hector A., additional, Wang, Haiyan, additional, Wang, Zhiming, additional, and Bao, Jiming, additional

Published
2022
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