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The rapid advancement of nanocomposite materials for coupled triboelectric and piezoelectric nanogenerators (TENG-PENG) has attracted considerable attention due to efficient mechanical energy harvesting in portable and self-powered systems. However, challenges persist due to the nonuniform distribution of guest materials within nanocomposites, resulting in limited surface potential and polarization properties. Here, we demonstrated the incorporation of Nafion into poly-(vinylidene fluoride):lead zirconium titanate (PVDF:PZT) hybrid nanofibers, substantially enhancing the β phase. The surface potential of PVDF:PZT increased to 86 mV, representing a 21% increase over untreated PVDF, while stimulated PVDF:PZT-N hybrid nanofibers show a notable boost of ∼175 mV, increasing to 146% compared to PVDF. The hybrid PVDF:PZT-N exhibits a storage modulus of ∼306 Pa and electrospun hybrid nanofibers displays an elastic limit of ∼1.48 MPa. Furthermore, the efficacy of the PVDF:PZT-N nanofibers is validated through a comparative analysis between engineered single- and double-dielectric layered TENG-PENG devices, producing maximum output currents and voltages of ∼7 μA and ∼40 V, respectively. These TENG-PENG devices have demonstrated their potential to illuminate multiple light-emitting diodes and digital LED display boards. Overall, the incorporation of Nafion into PVDF:PZT nanofibers significantly enhances the output performance of synergistically integrated PENG and TENG systems, offering promising advancements in mechanical energy harvesting and self-powered electronic devices. [ABSTRACT FROM AUTHOR]

Gallium oxide (Ga2O3) based phototransistor can be used as a switch and an amplifier in typical digital and analog UV photonic applications, respectively. The light detection capability in Ga2O3 is very high, but these phototransistors suffer from poor drain current saturation with bias. Furthermore, the transistor switching action generally necessitates a gate terminal voltage, where a faulty gate power supply can lead to a high current flow in the transistor and subsequently damage the control driver circuit. An alternative is a two-terminal device with pure optical coupling at gate terminal, termed as a light effect transistor (LET). The LET has the field effect transistor (FET)-like current–voltage output characteristics, where the controlling mode is light instead of voltage, and being a two-terminal device, the fabrication processes are straightforward and cost-effective in contrast to the traditional FET. The fabricated LET device comprised an n-Ga2O3/p-GaN heterojunction with a planar metal–semiconductor–metal structure. This unique device can operate in two modes, linear (photodetector) within 1–2.5 V and saturation [depletion width modulated light effect transistor (DM-LET)] within 2.5–5 V. Under the DM-LET mode, the structure exhibits transistor-like action, the drain current saturates with the variation in drain voltage and is only controlled by the change in optical intensity. The transistor-like action has been attributed to the pinch-off effect near the drain electrode due to modulation in the heterojunction depletion width and has been explained using detailed numerical simulation. Such devices have the potential to be used in UV photonic integrated circuits and UV-non-line-of-sight communication technologies. [ABSTRACT FROM AUTHOR]