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485 results on '"Shen, Huaibin"'

16. Over 800% Efficiency Enhancement of Solution-Processed All-Inorganic Quantum-Dot Light Emitting Diodes with an Ultrathin Alumina Passivating Layer

Author

Ji, Wenyu, Shen, Huaibin, Zhang, Han, Kang, Zhihui, and Zhang, Hanzhuang

Subjects
Physics - Applied Physics
Abstract

The use of robust, inorganic charge-transport materials is always desired in quantum-dot light emitting diodes (QLEDs) because they are expected to allow higher stability and less cost than that of organic counterparts. Here we report an all-inorganic QLED with excellent efficiency by modifying the solution-processed NiO (s-NiO) surface with an ultrathin Al2O3 passivating layer. The localized electric field induced by nickel oxyhydroxide (NiOOH) is estimated to be ~ 70 MV/cm at a distance of 6 nm from the surface of s-NiO layer. Both transient resolution photoluminescence (TRPL) and X-Ray photoelectron spectroscopy (XPS) measurements demonstrate that the Al2O3 passivating layer can effectively passivate the NiOOH on the s-NiO surface, hence suppressing the exciton quenching. As a result, over 800% efficiency enhancement up to 34.1 cd/A (8.1%) for the current efficiency (external quantum efficiency, EQE) of the QLEDs is achieved. To the best of our knowledge, this is the best-performing all-inorganic QLED so far., Comment: There are some errors in the manuscript

Published
2018

27. Strong high-energy exciton electroluminescence from the light holes of polytypic quantum dots.

Author

Wang, Xingzhi, Gao, Yan, Liu, Xiaonan, Xu, Huaiyu, Liu, Ruixiang, Song, Jiaojiao, Li, Bo, Shen, Huaibin, and Fan, Fengjia

Subjects
QUANTUM dots, ELECTROLUMINESCENCE, ELECTRON emission, EXCITON theory, LIGHT sources, PHOTON emission, ELECTRIC fields
Abstract

High-energy exciton emission could allow single-component multi-colour display or white light-emitting diodes. However, the thermal relaxation of high-energy excitons is much faster than the photon emission of them, making them non-emissive. Here, we report quantum dots with light hole-heavy hole splitting exhibiting strong high-energy exciton electroluminescence from high-lying light holes, opening a gate for high-performance multi-colour light sources. The high-energy electroluminescence can reach 44.5% of the band-edge heavy-hole exciton emission at an electron flux density Φe of 0.71 × 1019 s−1 cm−2 − 600 times lower than the photon flux density Φp (4.3 × 1021 s−1 cm−2) required for the similar ratio. Our simulation and experimental results suggest that the oscillator strength of heavy holes reduces more than that of light holes under electric fields. We attribute this as the main reason for strong light-hole electroluminescence. We observe this phenomenon in both CdxZn1-xSe-ZnS and CdSe-CdS core-shell quantum dots exhibiting large light hole-heavy hole splittings. Previous observations of high-energy exciton electroluminescence rely on filling the ground state with excessive charges, Wang et al. report such observation from quantum dots at low charge concentration by increasing the relative oscillator strength of higher-lying light holes comparing to that of ground-state heavy holes. [ABSTRACT FROM AUTHOR]

Published
2024
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33. Stable Blue Quantum Dot LED with 23% external quantum efficiency

Author

Zhang, Wenjing, primary, Li, Bo, additional, Chang, Chun, additional, Chen, Fei, additional, Zhang, Qin, additional, Lin, Qingli, additional, Wang, Lei, additional, Yan, Jinhang, additional, Wang, Fangfang, additional, Chong, Yihua, additional, Du, Zuliang, additional, Fan, Fengjia, additional, and Shen, Huaibin, additional

Published
2023
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40. Heavy-metal-free blue-emitting ZnSe(Te) quantum dots: synthesis and light-emitting applications.

Author

Deng, Xiangzhen, Zhang, Fengjuan, Zhang, Ying, and Shen, Huaibin

Abstract

Colloidal quantum dots (QDs) possess superb optoelectronic properties, making them suitable as light emitters. However, the toxicity of classical Cd/Pb QDs with high luminescence efficiency restricts their further industrial light-emitting applications. Heavy-metal-free ZnSe(Te) QDs are regarded as the most promising alternative to Cd/Pb-based QD blue emitters, which are expected to solve the problems through which InP QDs struggle to achieve efficient blue emission. However, the realization of ZnSe(Te) QDs and light-emitting devices with high efficiency, high stability, and narrow emission faces huge challenges. In this review, the synthesis of ZnSe(Te) QDs is reviewed, and their improvement strategies including bandgap engineering and surface passivation are introduced and discussed. The progress regarding blue ZnSe(Te)-based light-emitting applications is summarized. Finally, a brief outlook is provided, highlighting the current challenges being faced, their possible solutions, and future development directions. [ABSTRACT FROM AUTHOR]

Published
2023
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42. Deep‐Red InP Core‐Multishell Quantum Dots for Highly Bright and Efficient Light‐Emitting Diodes.

Author

Huang, Pan, Liu, Xiaonan, Jin, Geyu, Liu, Fangze, Shen, Huaibin, and Li, Hongbo

Subjects
QUANTUM dots, LIGHT emitting diodes, LED displays, QUANTUM efficiency, CHARGE carriers, BAND gaps, QUANTUM dot LEDs
Abstract

InP‐based quantum dots (QDs) are one of the most promising heavy‐metal‐free materials for light‐emitting applications to substitute cadmium‐analogous QDs. With a bulk band gap of 1.35 eV, InP QDs can be made to emit light in the deep red and even near‐infrared region by adjusting the size. Deep‐red light‐emitting diodes (LEDs) are of great interest for promoting the growth of plants and accurate red LED displays. However, the synthesis and the fabrication of InP‐based quantum‐dot LEDs (QLEDs) emitting in the deep red region are still under development. Here, the study reports deep‐red InP/ZnSe/ZnSeS/ZnS core‐shell QDs with a photoluminescence (PL) emission peak at 680 nm and a PL quantum yield up to 95%, which is the highest among reported deep‐red QDs. Multi‐shell with a transition layer of ZnSeS is realized to decrease the lattice mismatch in the shell and increase the shell thickness, which efficiently confines charge carriers and reduces non‐radiative recombinations. In addition, the core‐shell InP QLED achieves a high luminescence of 2263 cd m−2 and an external quantum efficiency up to 6.5%. This report provides a new strategy for promoting the development of deep‐red QLEDs for next‐generation lighting and display devices. [ABSTRACT FROM AUTHOR]

Published
2023
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