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Halide perovskites possess ultra-low thermal conductivity and show high potential for thermoelectric devices. The chemical properties and molecular structure of halide perovskite materials are not completely stable under ambient conditions, which hinders their use in thermoelectric generators. Changes in the properties of bulk halide perovskite thermoelectrics are accompanied by partial phase transitions and surface oxidation processes. In this paper, we conducted a comprehensive study of the transport and structural properties of CsSnI3, which were pristine by vacuum melting followed by spark plasma sintering. The research results on the electrical transport of these materials revealed that exposure to an inert atmosphere does not deteriorate stability and the properties of the materials remain unchanged. However, prolonged exposure to air leads to a significant degradation of the electrical transport properties. Contrary to thin-film samples, the shift to the double perovskite structure from the perovskite one is limited to a specific surface layer. This change significantly influences the electrical transport of the material while maintaining the essential properties of both perovskite types.This study investigates methods to improve the stability of halide perovskites for thermoelectric devices. Researchers compare the effects on CsSnI3samples from exposure to inert atmosphere or air. Prolonged exposure to air leads to a significant degradation of the electrical transport properties.Graphical Abstract