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282 results on '"Shi, Jingyuan"'

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1. The Modular Protection and Design Method of Traditional Residential Buildings in Bayu Ancient Town

7. Measurements of decay branching fractions of $H\to b\bar{b}/c\bar{c}/gg$ in associated $(e^{+}e^{-}/\mu^{+}\mu^{-})H$ production at the CEPC

8. Precision Higgs Physics at CEPC

15. Improved Dujiangyan Irrigation System Optimization (IDISO): A Novel Metaheuristic Algorithm for Hydrochar Characteristics.

22. Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices

24. Can Press Freedom Enhance the Effect of News Exposure on COVID-19 Health Beliefs? A Health Belief Model Perspective.

25. Impact of SiO2 hardmask on the DC and RF characteristics of InP HEMTs.

28. Suppression of Bulk Traps in Al2o3 Gate Dielectric and its Effect on Threshold Voltage Instability in Al2o3/Algan/Gan Metal-Oxide-Semiconductor High Electron Mobility Transistors

29. sj-doc-1-scx-10.1177_10755470231151452 – Supplemental material for Individual and Collective Actions Against Climate Change Among Chinese Adults: The Effects of Risk, Efficacy, and Consideration of Future Consequences

32. Capture and emission mechanisms of defect states at interface between nitride semiconductor and gate oxides in GaN-based metal-oxide-semiconductor power transistors.

34. Who Sets the Agenda? the Dynamic Agenda Setting of the Wildlife Issue on Social Media.

41. Extending the Risk Perception Attitude Framework to Predict Individuals' Engagement in Collective Actions Against Cancer.

42. Identification of Semi-ON-State Current Collapse in AlGaN/GaN HEMTs by Drain Current Deep Level Transient Spectroscopy

46. A composite with a gradient distribution of graphene and its anisotropic electromagnetic reflection

47. Identification of bulk and interface state-induced threshold voltage instability in metal/SiNx(insulator)/AlGaN/GaN high-electron-mobility transistors using deep-level transient spectroscopy

48. Radiation-hardened property of single-walled carbon nanotube film-based field-effect transistors under low-energy proton irradiation

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