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Hf0.5Zr0.5O2 (HZO) is a promising candidate for next generation ferroelectric memories and transistors. However, its ferroelectricity origin is still under debate due to the complex of its phase and microstructure in practical samples. In this study, we investigate the atomic structure of substrate-free HZO freestanding film with multislice electron ptychography, for which the ultra-high space resolution (up to ~25 pm) and capability to simultaneously image the cation and oxygen allow us to precisely determine the intrinsic atomic structures of different phases and reveal subtle changes among them. We clarify that the orthorhombic phase is ferroelectric with spontaneous polarization ~34{\pm}4 {\mu}C/cm2 (corresponding to 56{\pm}6 pm in displacement) that is accurately measured through statistical analysis. Significant polarization suppression is observed near the grain boundary, while no distinguishable structural changes are detected near the 180{\deg} ferroelectric domain walls. Through the direct oxygen imaging of orthorhombic phase from the [111] zone axis, we quantify a substantial number of oxygen vacancies with a preferential distribution, which influences the polarization direction and strength. These findings provide fundamentals for HZO research, and thus lay a foundation for the design of high-performance ferroelectric devices.

Phonon resistance from dislocation scattering is often divided into short-range core interactions and long-range strain field interactions. Using electron energy-loss spectroscopy on a GaN dislocation, we report observations of vibrational modes localized at specific core atoms (short-range) and strain-driven phonon energy shifts around the dislocation (long-range). Ab initio calculations support these findings and draw out additional details. This study reveals atomically resolved vibrational spectra of dislocations, thus offering insights for engineering improved material functionalities.

In this study, we explore the heterointerface of MgB$_2$ film on SiC substrate at atomic scale using electron microscopy and spectroscopy. We detect ~1 nm MgO between MgB$_2$ and SiC. Atomic-level electron energy loss spectra (EELS) show MgB$_2$-E2g mode splitting and softening near the MgB$_2$/MgO interface. Orbital-resolved core-level EELS link the phonon softening to in-plane boron-atom electron states' changes. Ab initio calculations confirm this softening enhances electron-phonon coupling at the interface. Our findings highlight interface engineering's potential for superconductivity enhancement.

Phonons are the primary heat carriers in non-metallic solids. In compositionally heterogeneous materials, the thermal properties are believed to be mainly governed by the disrupted phonon transport due to mass disorder and strain fluctuations, while the effects of compositional fluctuation induced local phonon states are usually ignored. Here, by scanning transmission electron microscopy electron energy loss spectroscopy and sophisticated calculations, we identify the vibrational properties of ingredient-dependent interface phonon modes in AlxGa1-xN and quantify their various contributions to the local interface thermal conductance. We demonstrate that atomic-scale compositional fluctuation has significant influence on the vibrational thermodynamic properties, highly affecting the mode ratio and vibrational amplitude of interface phonon modes and subsequently redistributing their modal contribution to the ITC. Our work provides fundamental insights into understanding of local phonon-boundary interactions in nanoscale inhomogeneities, which reveal new opportunities for optimization of thermal properties via engineering ingredient distribution.

Natural materials usually consist of isotopic mixtures, for which different isotopic ratios can lead to distinct material properties such as thermal conductivity and nucleation process. However, the knowledge of isotopic interface remains largely unexplored mainly due to the challenges in isotopic identification and property measurement at an atomic scale. Here, by using monochromated electron energy-loss spectroscopy in a scanning transmission electron microscope, we reveal momentum-transfer-dependent lattice vibration behavior at an artificial h-10BN/h-11BN heterostructure with sub-unit-cell resolution. We find the vibrational energy changes across the isotopic interface gradually, featuring a wide transition regime, which suggests strong delocalization of the out-of-plane optical phonons at the interface. In addition, we identify phonons near the Brillouin zone center have a transition regime ~3.34 nm (10 atomic layers), whereas phonons at the Brillouin zone boundary transition in ~1.66 nm (5 atomic layers). We propose that the isotope-induced charge effect at the interface accounts for the distinct delocalization behavior. Moreover, intra-atomic layer variation of vibration energy is also sensitive to the momentum transfer, thus at the interface it depends on both of momentum transfer and mass change. The revealed lattice vibration behavior at an isotopic interface provides new insights to understand the isotopic effects on properties in natural materials.

In twisted h-BN/graphene heterostructures, the complex electronic properties of the fast-traveling electron gas in graphene are usually considered to be fully revealed. However, the randomly twisted heterostructures may also have unexpected transition behaviors, which may influence the device performance. Here, we study the twist angle-dependent coupling effects of h-BN/graphene heterostructures using monochromatic electron energy loss spectroscopy. We find that the moir\'e potentials alter the band structure of graphene, resulting in a redshift of the intralayer transition at the M-point, which becomes more pronounced up to 0.25 eV with increasing twist angle. Furthermore, the twisting of the Brillouin zone of h-BN relative to the graphene M-point leads to tunable vertical transition energies in the range of 5.1-5.6 eV. Our findings indicate that twist-coupling effects of van der Waals heterostructures should be carefully considered in device fabrications, and the continuously tunable interband transitions through the twist angle can serve as a new degree of freedom to design optoelectrical devices.

The nanoscale lattice imperfections, such as dislocations, have a significant impact on the thermal transport properties in non-metallic materials. Understanding such effects requires the knowledge of defect phonon modes, which however is largely unexplored in experiments due to the challenge in characterization of phonons for the atomic-sized defects. Here, at the atomic scale we directly measure the localized phonon modes of dislocations at a Si/Ge interface using scanning transmission electron microscopy electron energy loss spectroscopy. We find that the dislocation induces new phonon modes localized within ~2-unit cells of the core, which experience a redshift of several milli-electron-volts compared to the dislocation-free case. The observed spectral features agree well with simulations. These localized modes are expected to reduce the phonon transmission channels across the defect and thus the local thermal conductivity. The revealed phonon modes localized at dislocations may help us to improve the thermal properties in thermoelectric generators and thermal management systems with proper defect engineering.

Nanoscale materials usually can trap light and strongly interact with it leading to many photonic device applications. The light-matter interactions are commonly probed by optical spectroscopy, which, however, have some limitations such as diffraction-limited spatial resolution, tiny momentum transfer and non-continuous excitation/detection. In this work, using scanning transmission electron microscopy-electron energy loss spectroscopy (STEM-EELS) with ultra-wide energy and momentum match and sub-nanometer spatial resolution, we study the optical microcavity resonant spectroscopy in a single SiC nanowire. The longitudinal Fabry-Perot (FP) resonating modes and the transverse whispering-gallery modes (WGMs) are simultaneously excited and detected, which span from near-infrared (~ 1.2 {\mu}m) to ultraviolet (~ 0.2 {\mu}m) spectral regime and the momentum transfer can be ranging up to 108 cm{^{-1}}. The size effects on the resonant spectra of nanowires are also revealed. Moreover, the nanoscale decay length of resonant EELS is revealed, which is contributed by the strongly localized electron-photon interactions in the SiC nanowire. This work provides a new alternative technique to investigate the optical resonating spectroscopy of a single nanowire structure and to explore the light-matter interactions in dielectric nanostructures, which is also promising for modulating free electrons via photonic structures.

Defects in oxides usually exhibit exotic properties that may be associated with the local lattice dynamics. Here, at atomic spatial resolution, we directly measure phonon modes of an antiphase boundary (APB) in SrTiO3 freestanding membrane and correlate them with the picometer-level structural distortion. We find that the SrTiO3 APB introduces new defect phonon modes that are absent in bulk SrTiO3. These modes are highly sensitive to the subtle structure distortion, i.e., the SrTiO3 APB generates the local electric dipoles forming an antiferroelectric configuration, which significantly softens the transverse optical (TO) and longitudinal optical (LO) modes at {\Gamma} point. Correlating the local phonons with the subtle structural distortion, our findings provide valuable insights into understanding the defect properties in complex oxides and essential information for their applications such as thermoelectric devices.

Enhanced light-matter interaction at the nanoscale is pivotal in the foundation of nonlinear optics, quantum optics, and nanophotonics, which are essential for a vast range of applications including single-photon sources, nanolasers, and nanosensors. In this context, the combination of strongly confined polaritons and low-loss nanocavities provides a promising way to enhance light-matter interaction, thus giving rise to a high density of optical states, as quantified by the so-called Purcell factor - the ratio of the decay rate of an optical quantum emitter to its value in free space. Here, we exploit whispering-gallery hyperbolic-phonon-polariton (WG-HPhP) modes in hBN nanotubes (BNNTs) to demonstrate record-high Purcell factors (~10^12) driven by the deep-subwavelength confinement of phonon polaritons and the low intrinsic losses in these atomically smooth nanocavities. Furthermore, the measured Purcell factor increases with decreasing BNNT radius down to 5 nm, a result that extrapolates to ~10^14 in a single-walled BNNT. Our study supports WG-HPhP modes in one-dimensional nanotubes as a powerful platform for investigating ultrastrong light-matter interactions, which open exciting perspectives for applications in single-molecular sensors and nanolasers., Comment: 21 pages, 4 figures

Recently various topological polar structures have been discovered in oxide thin films. Despite the increasing evidence of their switchability under electrical and/or mechanical fields, the dynamic property of isolated ones, which is usually required for applications such as data storage, is still absent. Here, we show the controlled nucleation and motion of isolated three-fold vertices under an applied electric field. At the PbTiO3/SrRuO3 interface, a two-unit-cell thick SrTiO3 layer provides electrical boundary conditions for the formation of three-fold vertices. Utilizing the SrTiO3 layer and in situ electrical testing system, we find that isolated three-fold vertices can move in a controllable and reversible manner with a velocity up to ~629 nm s-1. Microstructural evolution of the nucleation and propagation of isolated three-fold vertices is further revealed by phase-field simulations. This work demonstrates the ability to electrically manipulate isolated three-fold vertices, shedding light on the dynamic property of isolated topological polar structures.

The breakdown of translational symmetry at heterointerfaces leads to the emergence of new phonon modes localized near the interface. These interface phonons play an essential role in thermal/electrical transport properties in devices especially in miniature ones wherein the interface may dominate the entire response of the device. Knowledge of phonon dispersion at interfaces is therefore highly desirable for device design and optimization. Although theoretical work has begun decades ago, experimental research is totally absent due to challenges in achieving combined spatial, momentum and spectral resolutions required to probe localized phonon modes. Here we use electron energy loss spectroscopy in an electron microscope to directly measure both the local phonon density of states and the interface phonon dispersion relation for an epitaxial cBN-diamond heterointerface. In addition to bulk phonon modes, we observe acoustic and optical phonon modes localized at the interface, and modes isolated away from the interface. These features only appear within ~ 1 nm around the interface. The experimental results can be nicely reproduced by ab initio calculations. Our findings provide insights into lattice dynamics at heterointerfaces and should be practically useful in thermal/electrical engineering.

Direct measurement of local phonon dispersion in individual nanostructures can greatly advance our understanding of their electrical, thermal, and mechanical properties. However, such experimental measurements require extremely high detection sensitivity and combined spatial, energy and momentum resolutions, thus has been elusive. Here, we develop a four-dimensional electron energy loss spectroscopy (4D-EELS) technique based a monochromated scanning transmission electron microscope (STEM), and present the position-dependent phonon dispersion measurement in individual boron nitride nanotubes (BNNTs). Our measurement shows that the unfolded phonon dispersion of multi-walled BNNTs is close to hexagonal-boron nitride (h-BN) crystals, suggesting that interlayer coupling and curved geometry have no substantial impacts on phonon dispersion. We also find that the acoustic phonons are extremely sensitive to momentum-dependent defect scattering, while optical phonons are much less susceptible. This work not only provides useful insights into vibrational properties of BNNTs, but also demonstrates huge prospects of the developed 4D-EELS technique in nanoscale phonon dispersion measurements.

Contact interface properties are important in determining the performances of devices based on atomically thin two-dimensional (2D) materials, especially those with short channels. Understanding the contact interface is therefore quite important to design better devices. Herein, we use scanning transmission electron microscopy, electron energy loss spectroscopy, and first-principles calculations to reveal the electronic structures within the metallic (1T')-semiconducting (2H) MoTe2 coplanar phase boundary across a wide spectral range and correlate its properties and atomic structure. We find that the 2H-MoTe2 excitonic peaks cross the phase boundary into the 1T' phase within a range of approximately 150 nm. The 1T'-MoTe2 crystal field can penetrate the boundary and extend into the 2H phase by approximately two unit cells. The plasmonic oscillations exhibit strong angle dependence, i.e., a red-shift (approximately 0.3 eV-1.2 eV) occurs within 4 nm at 1T'/2H-MoTe2 boundaries with large tilt angles, but there is no shift at zero-tilted boundaries. These atomic-scale measurements reveal the structure-property relationships of 1T'/2H-MoTe2 boundary, providing useful information for phase boundary engineering and device development based on 2D materials., Comment: 14 pages and 4 figures. National Science Review 2020

Surface phonon polaritons hold much potential for subwavelength control and manipulation of light at the infrared to terahertz wavelengths. Here, aided by monochromatic scanning transmission electron microscopy - electron energy loss spectroscopy technique, we study the excitation of optical phonon modes in SiC nanorods. Surface phonon polaritons are modulated by the geometry and size of SiC nanorods. In particular, we study the dispersion relation, spatial dependence and geometry and size effects of surface phonon polaritons. These experimental results are in agreement with dielectric response theory and numerical simulation. Providing critical information for manipulating light in polar dielectrics, these findings should be useful for design of novel nanoscale phonon-photonic devices.