28 results on '"Shih, W.C."'
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2. Characteristics of transparent conductive Al-doped ZnO and Ag–Ti tri-layer thin films prepared by multi-target magnetron sputtering
3. The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr 0.53Ti 0.47O 3)-insulator (ZrO 2)-semiconductor (MFIS) thin-film capacitors
4. Electromigration damage and failure distributions in Al-4 wt % Cu interconnects
5. Magnetic properties and structure of sputtered Co/Pd-Ag multilayers
6. Preparation and characterization of (Tl2Ba2CaCu2)8 thin films by laser ablation and thallium diffusion
7. Study of AlGaN/GaN Tri-Gate HEMTs for Device Performance Improvement
8. Enhancement Mode AlGaN/GaN MIS-HEMTs Using Multilayer HfO2/La2O3 Gate Insulator for High Power Application
9. Improved Linearity and Reliability in GaN MOS-HEMTs Using Nanolaminate La2O3/SiO2 Gate Dielectric
10. The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors
11. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
12. Room-temperature fabrication of highly transparent conductive aluminum-doped zinc oxide films.
13. Ce K-edge EXAFS study of nanocrystalline CeO2
14. Evolution of microstructure and magnetoresistance in Co/Cu multilayers during annealing
15. Transmission electron microscopy of AlCu interconnects during in-situ electromigration testing
16. Crystallization behaviour of AlSm amorphous alloys
17. Correlation of Roughness, Impurity, Infra-Red Emissivity and Sputter Conditions for Aluminium Films
18. Studies of giant magnetoresistive Co—Cu multilayers
19. Microstructure, Damage and Resistance during Electromigration Life-Testing of Al-Cu Interconnects
20. Sputter deposition of giant magnetoresistive Co-Cu multilayers
21. Microstructure-property relations in CoPd multilayers
22. The use of the Fresnel method for the characterisation of a short-period strained Ge/Si multilayer: I. Measurement of the average Ge/Si volume ratio
23. The use of the Fresnel method for the characterisation of a short-period strained Ge/Si multilayer: II. Measurement of a layer-thickness irregularity
24. The measurement of the roughness of W/Si multilayers using the Fresnel method
25. The sputter deposition of precision metal multilayers
26. Microstructure, Damage and Resistance during Electromigration Life-Testing of Al-Cu Interconnects.
27. Transmission electron microscopy of Al [sbnd]Cu interconnects during in-situ electromigration testing
28. The effect of annealing temperature on the electrical properties of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (ZrO2)-semiconductor (MFIS) thin-film capacitors
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