Search

Research was conducted to characterize the spatial distributions of damage and failure sites in test lines. The objective was to explore the usefulness of the type of study in elucidating damage and failure mechanisms. The distributions indicate that there is no temperature variation over the bulk of the length of the test lines. The concentration of damage and failure at the cathode end of test lines suggests the influence of the local temperature gradient.

The magnetic and structural characteristics of Co/Pd-Ag multilayered structures grown by sputtering on (111)Si substrates were investigated using transmission electron microscopy. The results showed that the addition of several atomic percentage of Ag to Pd induced a strain which increased the magnetic coercivity and improved the squareness of the hysteresis loop. The best rectangular characteristics and highest coercivity was observed in samples with 4.0 at.% Ag.

A techniquewhich combines laser ablation of Ba-Ca-Cu-O thin films and a thallium diffusionprocess to prepare Tl2Ba2CaCu2O8 thin films was presented. Single phase thin films were found to be produced with process configuration and sintering temperatures. The films have a highly preferred orientation with the c crystal axis perpendicular to the surface of the substrate and critical current densitygreater than 10 to the 5th power angstrom/ square centimeters at five degrees Kelvin in zero applied field.

Abstract: Metal-ferroelectric-insulator-semiconductor (MFIS) thin-film structures using PbZr0.53Ti0.47O3 (PZT) as the ferroelectric layer and zirconium oxide (ZrO2) as the insulator layer were fabricated in this work. The leakage current and the C-V memory window were measured for MFIS capacitors with the PZT layer annealed at temperatures of 400 °C, 500 °C, 600 °C, 700 °C. The dominant conduction mechanism of Al/PZT(290 nm)/ZrO2(15 nm)/Si structure is Poole-Frenkel emission in the temperature range of 300-425 K. Under a sweep voltage of 6 V, the largest memory window of 1.31 V was obtained for 500 °C-annealed samples. The memory window as a function of insulator thickness was also discussed. More serious charge injection is observed when the voltage was swept from negative to positive. [Copyright &y& Elsevier]