166 results on '"Shim, Tae-Hun"'
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2. Design of Ag–Ga–S2-xSex-based eco-friendly core/shell quantum dots for narrow full-width at half-maximum using noble ZnGa2S4 shell material
3. Hardware Implementation of a Fully Functional Stochastic p‐STT Neuron for Probabilistic Computing
4. Relationship of Free Surface Area with Oxygen Concentration in Silicon Ingot Grown by Czochralski Method for High Efficiency Solar Cells
5. Fumed Silica-Based Ultra-High-Purity Synthetic Quartz Powder via Sol–Gel Process for Advanced Semiconductor Process beyond Design Rule of 3 nm
6. Double Pinned Perpendicular-Magnetic-Tunnel-Junction Spin-Valve Providing Multi-level Resistance States
7. (Digital Presentation) Electrochemical Metallization Cell Based Memristive Neuron Chip Fabricated with 28nm CMOS Process for Real-Time Unsupervised Learning and Pattern Recognition
8. (Digital Presentation) Ultraviolet CMOS Image-Sensor Embedded with Blue-Light Emitting Quantum-Dots for Analysing Air Environment Analysis
9. Tunneling-Magnetoresistance Ratio Comparison of MgO-Based Perpendicular-Magnetic-Tunneling-Junction Spin Valve Between Top and Bottom Co2Fe6B2 Free Layer Structure
10. Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge 3 Se 7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array
11. Layer‐Dependent Effects of Interfacial Phase‐Change Memory for an Artificial Synapse
12. Real‐Time Correlation Detection via Online Learning of a Spiking Neural Network with a Conductive‐Bridge Neuron
13. Bi‐Stable Resistance Generation Mechanism for Oxygenated Amorphous Carbon‐Based Resistive Random‐Access Memory
14. Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability
15. Bidirectional Electric-Induced Conductance Based on GeTe/Sb2Te3 Interfacial Phase Change Memory for Neuro-Inspired Computing
16. Two Terminal Perpendicular Spin Transfer Torque Magnetic Random Access Memory Based Stochastic Nature Spin Neuron Device for Spiking Neural Network
17. Electrical Performance Enhanced Doping Less Tunnel Field Effect Transistor by Metal Electrode Work Function Engineering
18. Sputter‐grown GeTe/Sb 2 Te 3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation
19. Design of Ag–Ga–S2-xSex-based eco-friendly core/shell quantum dots for narrow full-width at half-maximum using noble ZnGa2S4 shell material.
20. Super‐Linear‐Threshold‐Switching Selector with Multiple Jar‐Shaped Cu‐Filaments in the Amorphous Ge3Se7 Resistive Switching Layer in a Cross‐Point Synaptic Memristor Array.
21. Effect of interface chemical properties on nonvolatile memory characteristics for small-molecule memory cells embedded with Ni nano-crystals surrounded by NiO
22. Impact of donor, acceptor, and blocking layer thickness on power conversion efficiency for small-molecular organic solar cells
23. Doping-less tunnel field-effect transistors by compact Si drain frame/Si0.6Ge0.4-channel/Ge source
24. Effect of interface thickness on power conversion efficiency of polymer photovoltaic cells
25. Design of Ag–Ga–S2-xSex-based eco-friendly core/shell quantum dots for narrow full-width at half-maximum using noble ZnGa2S4shell material
26. Design of n+-base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector
27. MgO-Tunneling-Barrier Crystallinity Influence on Resistance Sensing Margin for Spiking Neuron Having Perpendicular-Spin-Transfer-Torque Integrate Characteristic
28. Doping-Less Tunnel Field Effect Transistor Using Compact-Si-Drain, SiGe-Channel, and Ge-Source
29. Charge-Plasma-Based Doping-Less Vertical Thyristor for Highly Integrated Volatile Memory-Cell
30. Perpendicular Spin-Torque-Transfer Mechanism of Neuron: Integrate Vs. Stochastic Nature
31. Multi-level resistance uniformity of double pinned perpendicular magnetic-tunnel-junction spin-valve depending on top MgO barrier thickness
32. Dislocation sink annihilating threading dislocations in strain-relaxed Si1−xGexlayer
33. Dependence of SOI Properties on Memory Characteristics in a Cap-Less Memory Cell
34. Plasma Etching of SiO2 with CF3I Gas in Plasma-Enhanced Chemical Vapor Deposition Chamber for In-Situ Cleaning
35. Dependency of Multi-Level-Cell Behavior on Thickness of Top MgO Tunneling Barrier in Double Pinned Structure Perpendicular Spin-Torque-Transfer Magnetic Random Access Memory
36. Design of n+-base width of two-terminal-electrode vertical thyristor for cross-point memory cell without selector.
37. Condensation Mechanism for the Formation of Relaxed SiGe Layer Grown-on-Insulator
38. Effect of Hydrogen-Ion-Implantation on Self-Separation of Free-Standing Gallium Nitride Wafers Grown By Hvpe
39. Performance of thyristor memory device formed by a wet etching process
40. A two-terminal perpendicular spin-transfer torque based artificial neuron
41. Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation.
42. Ultraviolet CMOS Image-Sensor Via Energy Down Shift Mechanism of Blue-Light Emitting Quantum-Dots for Environment Analysis.
43. 3-Terminal Igzo FET Based 2T0C DRAM Combined Bit-Line Structure.
44. Multi-Bit Self-Rectifying Synaptic Memristor Having Tri-Layer Structure for Quantization Aware Training of Quantized Neural Network.
45. Skyrmion Based Synaptic Device Having Perpendicular Magnetic-Tunnel-Junction Spin-Valve Sensor.
46. Influence of pulsed bias frequency on the etching of magnetic tunneling junction materials
47. Design of two-terminal-electrode vertical thyristor as cross-point memory cell without selector
48. Design of Double Pinned Perpendicular Magnetic-Tunnel-Junction Spin-Valve Exhibiting Multiple Resistance States
49. Dependence of temperature and self-heating on electron mobility in ultrathin body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors.
50. Impact of the top silicon thickness on phonon-limited electron mobility in (110)-oriented ultrathin-body silicon-on-insulator n-metal-oxide-semiconductor field-effect transistors.
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