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1. Temperature induced blue shift and broadening of intersubband absorption and photocurrent spectra in GaAs/Al0.3Ga0.7As multiple quantum wells

4. Performance Boosting of Peripheral Transistor for High Density 4Gb DRAM Technologies by SiGe Selective Epitaxial Growth Technique

13. Highly manufacturable process technology for reliable 256 Mbit and 1 Gbit DRAMs

21. Performance Boosting of Peripheral Transistor for High Density 4Gb DRAM Technologies by SiGe Selective Epitaxial Growth Technique

22. Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers

25. The effects of TaN thickness and strained substrate on the performance and PBTI characteristics of poly-Si/TaN/HfSiON MOSFETs

27. Performance Boosting of Peripheral Transistor for High Density 4Gb DRAM Technologies by SiGe Selective Epitaxial Growth Technique

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