1. Extrinsic base effect on the Horizontal Current Bipolar Transistor (HCBT) electrical characteristics
- Author
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Koričić, Marko, Suligoj, Tomislav, Mochizuki, H., Morita, S., Shinomura, K., Imai, H., Đonlagić, D., Šorli, I., and Šorli, P.
- Subjects
Horizontal Current Bipolar Transistor (HCBT) ,0.18 µm BiCMOS ,extrinsic base - Abstract
Design issues associated with the HCBT extrinsic base fabrication in 0.18 µm BiCMOS process are addressed. Due to small transistor height of 350 nm, shallow extrinsic base is desired. The lower limit for junction depth is set by the excessive leakage current and soft breakdown behavior of the reverse base-collector I-V characteristics, which is characteristic for shallow silicided junctions. Reverse and forward characteristics are analyzed for two extrinsic base implantation parameters, with and without silicide formed over the perimeter part of the active area. It is shown that perimeter part of the extrinsic base junction is susceptible to junction leakage and should be protected from silicidation. Influence of the extrinsic base concentration on transistors’ current gain β is analyzed by device simulation. Current gain β is improved by higher extrinsic base concentration.
- Published
- 2010