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6. Erratum

Author

Gupta, Ashawant, Cook, Carmen, Toyoshiba, Len, Qiao, Jianmin, Yang, Cary Y., Shoji, Ken-Ichi, Fukami, Akira, Nagano, Takahiro, and Tokuyama, Takashi

Published
1993
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13. An Indoor Thermal Climate Optimization Technique Taking Account of a Multi-Phase Design Process.

Author

Shoji, Ken, Oguro, Masayuki, Ohno, Shigeru, Morikawa, Yasushige, and Kato, Shinsuke

Subjects
*CLIMATOLOGY, *TEMPERATURE, *ENERGY conservation, *CHROMOSOMES, *POWER resources, *ENERGY management, *DETECTORS, *ENERGY consumption, *ALGORITHMS
Abstract

A new method for optimizing the indoor thermal climate under nonuniform temperature distribution by accounting for energy conservation and indoor thermal comfort has been developed. Temperature settings and arrangements of thermal sensors of an HVAC system are optimized using a genetic algorithm-based method (e.g., Cantu-Paz 2000). In a genetic algorithm, design variables are coded into a ‘chromosome’ that is subject to a series of genetic operations in search of an optimized solution. An optimal sensor arrangement requires (1) the air temperature at the sensor location to correlate well with the thermal comfort of occupants regardless of seasonal and load variations and (2) low energy consumption to be maintained while preserving thermal comfort with an adequate temperature setting. Using an index called the contribution ratio of indoor climate (CRI), the results obtained for an optimized sensor arrangement and temperature settings are presented and compared with the results of alternative arrangements. [ABSTRACT FROM AUTHOR]

Published
2006

24. Improved crystalline quality of Si[sub 1-x]Ge[sub x] formed by low-temperature germanium ion....

Author

Shoji, Ken-ichi and Fukami, Akira

Subjects
*ION implantation, *GERMANIUM, *TRANSMISSION electron microscopy
Abstract

Examines the crystalline quality of Si[sub 1-x]Ge[sub x] formed by germanium ion implantation. Characterization of p-n junction diodes in SiGe layer; Reduction of end-of-range defects; Use of transmission electron microscopy for electrical characterization of the diodes.

Published
1992
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25. Characterization of SiGe/Si heterostructures formed by Ge+ and C+ implantation.

Author

Fukami, Akira, Shoji, Ken-ichi, Nagano, Takahiro, and Yang, Cary Y.

Subjects
*HETEROSTRUCTURES, *GERMANIUM, *ION bombardment, *ANNEALING of metals
Abstract

Formation of SiGe/Si heterostructures by germanium ion implantation was investigated. A germanium-implanted layer was grown epitaxially in the solid phase by thermal annealing. Two kinds of crystalline defects were observed. One is a misfit dislocation, and the other is a residual dislocation caused by ion bombardment. The p-n junction formed in the SiGe layer has a leakage current three orders of magnitude larger than that of a pure Si p-n junction fabricated with an identical process except for the Ge+ implantation. Carbon doping in the SiGe layer improves its crystalline quality and the junction characteristics. [ABSTRACT FROM AUTHOR]

Published
1990
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