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Abstract Micro-light-emitting diodes (Micro-LEDs) are a new type of display device based on the third-generation semiconductor gallium nitride (GaN) material which stands out for its high luminous efficiency, elevated brightness, short response times, and high reliability. The contact between anode layers and P-GaN is one of the keys to improving the performance of the devices. This study investigates the impact of electrode structure design and optimized annealing conditions on the anode contact performance of devices. The Micro-LED device with the size of 9.1 μm whose electrode structure is ITO/Ti/Al/Ni/Cr/Pt/Au (100/50/350/100/500/500/5000 Å) exhibits a significant improvement in contact performance after annealing under the Ar gas atmosphere at 500 °C for 5 min. The optimized device exhibited a current of 10.9 mA and a brightness of 298,628 cd/m2 under 5 V. The EQE peak value of Device A is 10.06% at 400 mA.

In recent years, micro-light-emitting diode (micro-LED) displays have attracted much attention due to their high brightness, low power consumption, long lifetime, and fast response. It is considered to have the potential to revolutionize the development direction of next-generation visual display technology. However, the development of micro-LED displays faces numerous issues, primarily due to etching processes for pixel array manufacturing, which cause sidewall damage and decreased photoelectric efficiency. Specifically, these issues are particularly serious when preparing small-sized high-resolution displays. In this work, we effectively overcame the above-mentioned problems by only etching the electron barrier during the preparation process of pixel arrays. The prepared micro-LED display exhibits excellent optoelectronic properties, with the highest brightness and current efficiency reaching 1.66 × 106 nits and 104 cd/A, respectively. The method provides a feasible idea for preparing high-performance micro-LED displays.