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The capability of digital pulse shape technique to acquire data from CHIMERA detection cells (Si-CsI(TI) telescopes) has been evidenced in our previous works. We have now applied this technique to the charge discrimination of the products stopped in the silicon detectors. Large area totally depleted CHIMERA planar silicon detectors (5 cm x 5 cm area, 300/[micro]m thick) in both rear and front side injection have been used. In preliminary tests full charge identification for the reaction products up to Z = 11 have been obtained for products both crossing ([DELTA]E-E technique) and stopping in the silicon detector, using a 21 MeV/u [sup.20]Ne beam at the LNS Superconducting Cyclotron in Catania. The quality of the obtained results clearly indicates that the digital signal processing approach is able to give excellent results in this application, too. Index Terms--Charged particle identification, digital pulse shape processing, multidetector arrays technique, pulse shape analysis.

A comprehensive study of different fundamental aspects of light emission from defects in Si semiconductor devices is described. With the help of a new highly sensitive spectroscopic photon emission microscope for continuous wavelength analysis, a unique assignment of the spectrum of the emitted light and the corresponding failure mechanism is established.

Deep-level transient spectrometer facilitates the identification of recombination centers prevalent in very small concentrations in Czochralski-grown p-si. This analysis provides useful information for achieving control of a material's lifetime. The ionization energy and concentrations of the defect, localized in the vicinity of the gap in the P-type Cz material, is measured. The rates of hole and electron trapping and the barrier energy for hole capture are also evaluated. The analysis of the lifetime of the material as a function of these parameters indicates the dependence of lifetime on the defect.

Characterization of Si-SiO2 interface states of submicrometer metal-oxide-semiconductor field-effect transistors (MOSFET) and metal-oxide-semiconductor capacitors facilitates a comparative evaluation of charge pumping (CP) methodologies and capacitance determination. The efficacy of CP techniques in characterizing Si-SiO2 interface sites is attributed to its potential for accomplishing a greater energy resolution in comparison to capacitance techniques. In addition, CP techniques possess greater sensitivity than capacitance techniques. The energy-distribution of Si-SiO2 interface states is evaluated by an application of three-level and spectroscopic CP techniques to submicrometer MOSFETs.