441 results on '"Simin, G."'
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2. Investigating the Association Between Telemedicine Use and Timely Follow-Up Care After Acute Cardiovascular Hospital Encounters
3. LOW-FREQUENCY NOISE IN AlGaN/GaN HETEROSTRUCTURE FIELD EFFECT TRANSISTORS AND METAL OXIDE SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTORS
4. Reducing ethnic and racial disparities by improving undertreatment, control, and engagement in blood pressure management with health information technology (REDUCE-BP) hybrid effectiveness-implementation pragmatic trial: Rationale and design
5. Novel AlInN/GaN integrated circuits operating up to 500 °C
6. Insulated Gate Nitride-Based Field Effect Transistors
7. Investigating the Association Between Telemedicine Use and Timely Follow-Up Care After Acute Cardiovascular Hospital Encounters
8. Factors Associated with Liberation From the Ventilator after Tracheostomy in Severely Injured Trauma Patients
9. Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
10. Quaternary AlInGaN MQWs for Ultraviolet LEDs
11. Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures
12. Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures
13. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors
14. Effect of gate leakage current on noise properties of AIGaN/GaN field effect transistors
15. Low-frequency noise in n-GaN with high electron mobility
16. The role of same-sex mentorship and organizational support in encouraging women to pursue surgery
17. INSULATED GATE III-N HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS
18. Electronic Devices based on Group III Nitrides
19. HIGH FREQUENCY CONFINEMENT FACTOR MODULATION OF DIODE LASERS
20. A study of temperature field in a GaN heterostructure field-effect transistor
21. Indium-incorporation-induced transformation of optical, photoluminescence and lasing properties of InGaN epilayers
22. Getting to Know Semiconductors
23. DC and microwave performance of a GaN/AlGaN MOSHFET under high temperature stress
24. Transient response of highly doped thin channel GaN metal–semiconductor and metal-oxide–semiconductor field effect transistors
25. GaN epilayers and AlGaN/GaN multiple quantum wells grown on freestanding [1100] oriented GaN substrates
26. UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells
27. Metalorganic chemical vapor deposition of quaternary AlInGaN multiple quantum well structures for deep ultraviolet emitters
28. Role of polarization in the photoluminescence of C- and M-plane oriented GaN/AlGaN multiple quantum wells
29. High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates
30. Towards resonant THz detector: Devices based on Schottky diodes to 2DEG GaN/AlGaN
31. Electrically controlled wire-channel GaN/AlGaN transistor for terahertz plasma applications
32. WBGS Epitaxial Materials Development and Scale Up for RF/Microwave-Millimeter Wave Devices
33. High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor
34. Simulation of hot electron and quantum effects in AlGaN/GaN heterostructure field effect transistors.
35. Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region.
36. Nonresonant detection of terahertz radiation in field effect transistors.
37. The role of same-sex mentorship and organizational support in encouraging women to pursue surgery
38. High detectivity visible-blind SiF4 grown epitaxial graphene/SiC Schottky contact bipolar phototransistor.
39. (Invited) Power Loss Reduction in Perforated-Channel HFET Switches
40. Electronic Devices based on Group III Nitrides
41. Novel AlInN/GaN integrated circuits operating up to 500 °C
42. New Approaches to Realizing High Power Nitride Based Field Effect Transistors
43. Maximum powers of low-loss series–shunt FET RF switches
44. III-nitride microwave control devices and ICs
45. NOVEL APPROACHES TO MICROWAVE SWITCHING DEVICES USING NITRIDE TECHNOLOGY
46. High-performance RF components using capacitively-coupled contacts over III-N heterostructures
47. 2- to 20-GHz Switch Using III-Nitride Capacitively Coupled Contact Varactors
48. WBGS Epitaxial Materials Development and Scale Up for RF/Microwave-Millimeter Wave Devices
49. RF power limiter using capacitively-coupled contacts III-nitride varactor
50. Spin and interaction effects in Shubnikov-de Haas oscillations and the quantum Hall effect in GaN/AlGaN heterostructures
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