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122 results on '"Singh, Sanjai"'

5. GPU Accelerated Parallel Implementation of Linear Programming Algorithms

Author

Saha, Ratul Kishore, Pradhan, Ashutosh, Ghosh, Tiash, Jenamani, Mamata, Singh, Sanjai Kumar, Routray, Aurobinda, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Pardede, Eric, editor, Delir Haghighi, Pari, editor, Khalil, Ismail, editor, and Kotsis, Gabriele, editor

Published
2022
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6. Fault Detection in Seismic Data Using Graph Attention Network

Author

Palo, Patitapaban, Routray, Aurobinda, Singh, Sanjai Kumar, Goos, Gerhard, Founding Editor, Hartmanis, Juris, Founding Editor, Bertino, Elisa, Editorial Board Member, Gao, Wen, Editorial Board Member, Steffen, Bernhard, Editorial Board Member, Yung, Moti, Editorial Board Member, Strauss, Christine, editor, Cuzzocrea, Alfredo, editor, Kotsis, Gabriele, editor, Tjoa, A Min, editor, and Khalil, Ismail, editor

Published
2022
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7. Circularly Polarized Wideband Ring CDRA for Wireless Applications

Author

Rai, Chandravilash, Singh, Sanjai, Singh, Ashutosh Kumar, Angrisani, Leopoldo, Series Editor, Arteaga, Marco, Series Editor, Panigrahi, Bijaya Ketan, Series Editor, Chakraborty, Samarjit, Series Editor, Chen, Jiming, Series Editor, Chen, Shanben, Series Editor, Chen, Tan Kay, Series Editor, Dillmann, Rüdiger, Series Editor, Duan, Haibin, Series Editor, Ferrari, Gianluigi, Series Editor, Ferre, Manuel, Series Editor, Hirche, Sandra, Series Editor, Jabbari, Faryar, Series Editor, Jia, Limin, Series Editor, Kacprzyk, Janusz, Series Editor, Khamis, Alaa, Series Editor, Kroeger, Torsten, Series Editor, Li, Yong, Series Editor, Liang, Qilian, Series Editor, Martín, Ferran, Series Editor, Ming, Tan Cher, Series Editor, Minker, Wolfgang, Series Editor, Misra, Pradeep, Series Editor, Möller, Sebastian, Series Editor, Mukhopadhyay, Subhas, Series Editor, Ning, Cun-Zheng, Series Editor, Nishida, Toyoaki, Series Editor, Pascucci, Federica, Series Editor, Qin, Yong, Series Editor, Seng, Gan Woon, Series Editor, Speidel, Joachim, Series Editor, Veiga, Germano, Series Editor, Wu, Haitao, Series Editor, Zhang, Junjie James, Series Editor, Dhawan, Amit, editor, Tripathi, Vijay Shanker, editor, Arya, Karm Veer, editor, and Naik, Kshirasagar, editor

Published
2022
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18. Multi-band Hybrid Aperture-Cylindrical Dielectric Resonator Antenna for Wireless Applications

Author

Rai, Chandravilash, Singh, Amit, Singh, Sanjai, Singh, Ashutosh Kumar, Kacprzyk, Janusz, Series Editor, Gomide, Fernando, Advisory Editor, Kaynak, Okyay, Advisory Editor, Liu, Derong, Advisory Editor, Pedrycz, Witold, Advisory Editor, Polycarpou, Marios M., Advisory Editor, Rudas, Imre J., Advisory Editor, Wang, Jun, Advisory Editor, Saini, H. S., editor, Singh, R. K., editor, Tariq Beg, Mirza, editor, and Sahambi, J. S., editor

Published
2020
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28. Design and Analysis of Double CDRA with Extended Wideband Characteristics for C- and X-Band Applications.

Author

Rai, Chandravilash, Singh, Amit, Bhukya, Santhosh, Singh, Sanjai, Singh, Ashutosh Kumar, and Verma, Ramesh Kumar

Subjects
DIELECTRIC resonator antennas, MICROSTRIP transmission lines, CIRCULAR polarization
Abstract

In this article, the design and analysis of a double cylindrical dielectric resonator antenna (CDRA) of compact size 40 × 40 mm2 with extended wideband characteristics for C- and X-band applications is presented. A couple of CDRA is placed over the two adjoin rectangular slots which are excited by a modified microstrip feed line of 50 Ω. The proposed double CDRA resonates between frequency band 4.75 and14.43 GHz with 100.93% (9.68 GHz) impedance bandwidth. Two adjoin rectangularslots with a modified microstrip feed line generate two orthogonal degenerated hybrid modes (HEMx11δ and HEMy11δ), which are liable for the creation of circular polarization characteristics between the frequency band 6.62 and 8.5 GHz with 24.86% (1.88 GHz) 3-dB axial ratio bandwidth. The stable peak gain of 6.27 dB at frequency 12.62 GHz, whereas the gain of 3.31–6.27 dB and radiation efficiency of more than 86% in the entire operating band is obtained. [ABSTRACT FROM AUTHOR]

Published
2023
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43. Liquid Phase Exfoliated 2-D MoS2-Based Broadband Heterojunction Low-Powered Photosensor

Author

Kumar, Surendra, Gautam, Vidushi, Singh, Abhishek Kumar, Maurya, Gyanendra Kumar, Singh, Sanjai, and Kumar, Pramod

Abstract

Researchers are facing a strong reverse thrust toward the exfoliation of 2-D materials at a large scale. These limitations restrict so many intensively needed applications. We have demonstrated chemically exfoliated MoS2 nanosheets-assisted photosensor examined for low-incident optical power ( $3.78 ~\mu \text{W}$ ) and bias voltage −0.5 to +0.5 V.X-ray diffraction (XRD) results show no secondary peaks that neglect the presence of any impurity in the synthesized MoS2. The high-resolution scanning electron microscopy (HR-SEM) shows synthesized flower-like MoS2 nanosheets. Exfoliation of MoS2 nanosheets was carried out in ${N}$ , ${N}$ -methyl di-pyridine (NMP), a suitable solvent to develop single to few-layer MoS2 nanoflakes. During probe sonication, a low-temperature outer atmosphere arrangement has been ensured by using an ice bath. Sonicated solution has been centrifuged at 12 000 rpm, and the supernatant was collected and drop cast over a p-type (1,0,0) rectangular silicon wafer. Ohmic aluminum (Al) contact has been established. Current and voltage characteristics were performed to study the electrical behavior of fabricated p-Si and synthesized MoS2 heterostructure. The rectification ratio was ≈5800 achieved at ±2 V and the ideality factor was obtained 2.06 in the best-fitted region. The maximum responsivity and detectivity of 14.7 A/W and 2.25 jones were obtained at 300-nm wavelengths corresponding at low bias voltage of −0.5 V.

Published
2023
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44. Investigations on BaMnxTi1-xO3 ferroelectric film based MFS structure for non-volatile memory application.

Author

Debnath, Ajit, Lalwani, Suraj, Singh, Sanjai, and Sunny

Subjects
DIELECTRIC films, COATING processes, STRAY currents, SILICON films, THIN films, SPIN coating, FERROELECTRIC thin films, TITANIUM powder
Abstract

BaMnxTi1-xO3 thin film on a silicon substrate has been prepared through the sol–gel spin coating process. The ferroelectric BaMnxTi1-xO3 film shows the predominant perovskite ABO3 structure for x = 0.2 and 0.3 for the annealing temperature of 650 °C under nitrogen ambient. The metal contact on top and silicon substrate at the bottom of the film forms a Metal-Ferroelectric-Semiconductor capacitor structure. In BaMnxTi1-xO3, the deposited film changes its structural and electrical properties as the concentration value of 'x' is changed. The crystal structure of the deposited film has been analysed by XRD. FESEM, EDS and XPS characterization of the film were carried out to discuss the change in the film structure with the change in the value of 'x'. The Capacitor vs. Voltage (C–V), Current vs. Voltage (I–V), Charge vs. Voltage (Q–V), Endurance, PUND (Positive Up Negative Down) and dielectric study of the films are discussed. Memory window of 8.6 V and leakage current of few nA are obtained. The deposited ferroelectric film shows an endurance of ~ 1011 iteration cycle for the PUND pulse. The optimized doping molar concentration 'x' in BaMnxTi1-xO3 shows favourable results for ferroelectric non-volatile memory application with a low cost fabrication method. [ABSTRACT FROM AUTHOR]

Published
2022
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45. Improved thermoelectric properties of layered Ti1−xNbxS2−ySey solid solutions

Author

Romanenko, Anatoly I., primary, Yakovleva, Galina E., additional, Fedorov, Vladimir E., additional, Artemkina, Sofya B., additional, Yu. Ledneva, Alexandra, additional, Zhdanov, Kamil R., additional, Kuchumov, Boris M., additional, Kuznetsov, Vitalii A., additional, Wang, Hongchao, additional, Singh, Sanjai, additional, Saini, Shivani, additional, Han, Mi‐Kyung, additional, and Kim, Sung‐Jin, additional

Published
2020
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