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Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device variations, can be leveraged to design novel techniques and algorithms. This thesis proposes a technique for utilizing RRAM devices in three major directions: i) digital logic implementation, ii) multi-valued computing, and iii) hardware security primitive design. We proposed new algorithms and architectures and conducted \textit{experimental studies} on each implementation. Moreover, we developed the electronic design automation framework and hardware platforms to facilitate these experiments., Comment: Accepted as PhD Forum at VLSI-SoC 2024

In-memory computing (IMC) has gained significant attention recently as it attempts to reduce the impact of memory bottlenecks. Numerous schemes for digital IMC are presented in the literature, focusing on logic operations. Often, an application's description has data dependencies that must be resolved. Contemporary IMC architectures perform read followed by write operations for this purpose, which results in performance and energy penalties. To solve this fundamental problem, this paper presents in-memory mirroring (IMM). IMM eliminates the need for read and write-back steps, thus avoiding energy and performance penalties. Instead, we perform data movement within memory, involving row-wise and column-wise data transfers. Additionally, the IMM scheme enables parallel cloning of entire row (word) with a complexity of $\mathcal{O}(1)$. Moreover, our analysis of the energy consumption of the proposed technique using resistive random-access memory crossbar and experimentally validated JART VCM v1b model. The IMM increases energy efficiency and shows 2$\times$ performance improvement compared to conventional data movement methods., Comment: Accepted in IFIP/IEEE VLSI-SoC 2024

Electrical readout of magnetic states is a key to realize novel spintronics devices for efficient computing and data storage. Unidirectional magnetoresistance (UMR) in bilayer systems, consisting of a spin source material and a magnetic layer, refers to a change in the longitudinal resistance upon the reversal of magnetization, which typically originates from the interaction of spin-current and magnetization at the interface. Because of UMR s linear dependence on applied charge current and magnetization, it can be used to electrically read the magnetization state. However, in conventional spin source materials, the spin polarization of an electric field induced spin current is restricted to be in the film plane and hence the ensuing UMR can only respond to the in plane component of the magnetization. On the other hand, magnets with perpendicular magnetic anisotropy (PMA) are highly desired for magnetic memory and spin-logic devices, while the electrical read out of PMA magnets through UMR is critically missing. Here, we report the discovery of an unconventional UMR in bilayer heterostructures of a topological semimetal (WTe2) and a PMA ferromagnetic insulator (Cr2Ge2Te6, CGT), which allows to electrically read the up and down magnetic states of the CGT layer by measuring the longitudinal resistance. Our theoretical calculations based on a tight binding model show that the unconventional UMR originates from the interplay of crystal symmetry breaking in WTe2 and magnetic exchange interaction across the WTe2 and CGT interface. Combining with the ability of WTe2 to obtain magnetic field free switching of the PMA magnets, our discoveries open an exciting pathway to achieve two terminal magnetic memory devices that operate solely on the spin orbit torque and UMR, which is critical for developing next-generation non volatile and low power consumption data storage technologies.

In-Memory Computing (IMC) introduces a new paradigm of computation that offers high efficiency in terms of latency and power consumption for AI accelerators. However, the non-idealities and defects of emerging technologies used in advanced IMC can severely degrade the accuracy of inferred Neural Networks (NN) and lead to malfunctions in safety-critical applications. In this paper, we investigate an architectural-level mitigation technique based on the coordinated action of multiple checksum codes, to detect and correct errors at run-time. This implementation demonstrates higher efficiency in recovering accuracy across different AI algorithms and technologies compared to more traditional methods such as Triple Modular Redundancy (TMR). The results show that several configurations of our implementation recover more than 91% of the original accuracy with less than half of the area required by TMR and less than 40% of latency overhead., Comment: This paper will be presented at 29th IEEE European Test Symposium 2024 (ETS) 2024

Memristor-aided logic (MAGIC) design style holds a high promise for realizing digital logic-in-memory functionality. The ability to implement a specific gate in a MAGIC design style hinges on the SET-to-RESET threshold ratio. The TaOx memristive devices exhibit distinct SET-to-RESET ratios, enabling the implementation of OR and NOT operations. As the adoption of the MAGIC design style gains momentum, it becomes crucial to understand the breakdown of energy consumption in the various phases of its operation. This paper presents experimental demonstrations of the OR and NOT gates on a 1T1R crossbar array. Additionally, it provides insights into the energy distribution for performing these operations at different stages. Through our experiments across different gates, we found that the energy consumption is dominated by initialization in the MAGIC design style. The energy split-up is 14.8%, 85%, and 0.2% for execution, initialization, and read operations respectively., Comment: Accepted in VLSID 2024

Existing logic-in-memory (LiM) research is limited to generating mappings and micro-operations. In this paper, we present~\emph{MemSPICE}, a novel framework that addresses this gap by automatically generating both the netlist and testbench needed to evaluate the LiM on a memristive crossbar. MemSPICE goes beyond conventional approaches by providing energy estimation scripts to calculate the precise energy consumption of the testbench at the SPICE level. We propose an automated framework that utilizes the mapping obtained from the SIMPLER tool to perform accurate energy estimation through SPICE simulations. To the best of our knowledge, no existing framework is capable of generating a SPICE netlist from a hardware description language. By offering a comprehensive solution for SPICE-based netlist generation, testbench creation, and accurate energy estimation, MemSPICE empowers researchers and engineers working on memristor-based LiM to enhance their understanding and optimization of energy usage in these systems. Finally, we tested the circuits from the ISCAS'85 benchmark on MemSPICE and conducted a detailed energy analysis., Comment: Accepted in ASP-DAC 2024

Harnessing electronic excitations involving coherent coupling to bosonic modes is essential for the design and control of emergent phenomena in quantum materials [1]. In situations where charge carriers induce a lattice distortion due to the electron-phonon interaction, the conducting states get "dressed". This leads to the formation of polaronic quasiparticles that dramatically impact charge transport, surface reactivity, thermoelectric and optical properties, as observed in a variety of crystals and interfaces composed of polar materials [2-6]. Similarly, when oscillations of the charge density couple to conduction electrons the more elusive plasmon polaron emerges [7], which has been detected in electron-doped semiconductors [8-10]. However, the exploration of polaronic effects on low energy excitations is still in its infancy in two-dimensional (2D) materials. Here, we present the discovery of an interlayer plasmon polaron in heterostructures composed of graphene on top of SL WS$_2$. By using micro-focused angle-resolved photoemission spectroscopy (microARPES) during in situ doping of the top graphene layer, we observe a strong quasiparticle peak accompanied by several carrier density-dependent shake-off replicas around the SL WS$_2$ conduction band minimum (CBM). Our results are explained by an effective many-body model in terms of a coupling between SL WS$_2$ conduction electrons and graphene plasmon modes. It is important to take into account the presence of such interlayer collective modes, as they have profound consequences for the electronic and optical properties of heterostructures that are routinely explored in many device architectures involving 2D transition metal dichalcogenides (TMDs) [11-15]., Comment: 25 pages, 9 figures including Supporting Information

Memristor-based logic-in-memory (LiM) has become popular as a means to overcome the von Neumann bottleneck in traditional data-intensive computing. Recently, the memristor-aided logic (MAGIC) design style has gained immense traction for LiM due to its simplicity. However, understanding the energy distribution during the design of logic operations within the memristive memory is crucial in assessing such an implementation's significance. The current energy estimation methods rely on coarse-grained techniques, which underestimate the energy consumption of MAGIC-styled operations performed on a memristor crossbar. To address this issue, we analyze the energy breakdown in MAGIC operations and propose a solution that utilizes mapping from the SIMPLER MAGIC tool to achieve accurate energy estimation through SPICE simulations. In contrast to existing research that primarily focuses on optimizing execution energy, our findings reveal that the memristor's initialization energy in the MAGIC design style is, on average, 68x higher. We demonstrate that this initialization energy significantly dominates the overall energy consumption. By highlighting this aspect, we aim to redirect the attention of designers towards developing algorithms and strategies that prioritize optimizations in initializations rather than execution for more effective energy savings., Comment: Accepted to published in IEEE EMBEDDED SYSTEMS LETTER

In-memory computing for Machine Learning (ML) applications remedies the von Neumann bottlenecks by organizing computation to exploit parallelism and locality. Non-volatile memory devices such as Resistive RAM (ReRAM) offer integrated switching and storage capabilities showing promising performance for ML applications. However, ReRAM devices have design challenges, such as non-linear digital-analog conversion and circuit overheads. This paper proposes an In-Memory Boolean-to-Current Inference Architecture (IMBUE) that uses ReRAM-transistor cells to eliminate the need for such conversions. IMBUE processes Boolean feature inputs expressed as digital voltages and generates parallel current paths based on resistive memory states. The proportional column current is then translated back to the Boolean domain for further digital processing. The IMBUE architecture is inspired by the Tsetlin Machine (TM), an emerging ML algorithm based on intrinsically Boolean logic. The IMBUE architecture demonstrates significant performance improvements over binarized convolutional neural networks and digital TM in-memory implementations, achieving up to a 12.99x and 5.28x increase, respectively., Comment: Accepted at ACM/IEEE International Symposium on Low Power Electronics and Design 2023 (ISLPED 2023)

Data movement costs constitute a significant bottleneck in modern machine learning (ML) systems. When combined with the computational complexity of algorithms, such as neural networks, designing hardware accelerators with low energy footprint remains challenging. Finite state automata (FSA) constitute a type of computation model used as a low-complexity learning unit in ML systems. The implementation of FSA consists of a number of memory states. However, FSA can be in one of the states at a given time. It switches to another state based on the present state and input to the FSA. Due to its natural synergy with memory, it is a promising candidate for in-memory computing for reduced data movement costs. This work focuses on a novel FSA implementation using resistive RAM (ReRAM) for state storage in series with a CMOS transistor for biasing controls. We propose using multi-level ReRAM technology capable of transitioning between states depending on bias pulse amplitude and duration. We use an asynchronous control circuit for writing each ReRAM-transistor cell for the on-demand switching of the FSA. We investigate the impact of the device-to-device and cycle-to-cycle variations on the cell and show that FSA transitions can be seamlessly achieved without degradation of performance. Through extensive experimental evaluation, we demonstrate the implementation of FSA on 1T1R ReRAM crossbar., Comment: Accepted by 21st IEEE Interregional NEWCAS Conference 2023 (NEWCAS 2023)

This paper proposes an architecture that integrates neural networks (NNs) and hardware security modules using a single resistive random access memory (RRAM) crossbar. The proposed architecture enables using a single crossbar to implement NN, true random number generator (TRNG), and physical unclonable function (PUF) applications while exploiting the multi-state storage characteristic of the RRAM crossbar for the vector-matrix multiplication operation required for the implementation of NN. The TRNG is implemented by utilizing the crossbar's variation in device switching thresholds to generate random bits. The PUF is implemented using the same crossbar initialized as an entropy source for the TRNG. Additionally, the weights locking concept is introduced to enhance the security of NNs by preventing unauthorized access to the NN weights. The proposed architecture provides flexibility to configure the RRAM device in multiple modes to suit different applications. It shows promise in achieving a more efficient and compact design for the hardware implementation of NNs and security primitives.

With rapid advancements in electronic gadgets, the security and privacy aspects of these devices are significant. For the design of secure systems, physical unclonable function (PUF) and true random number generator (TRNG) are critical hardware security primitives for security applications. This paper proposes novel implementations of PUF and TRNGs on the RRAM crossbar structure. Firstly, two techniques to implement the TRNG in the RRAM crossbar are presented based on write-back and 50% switching probability pulse. The randomness of the proposed TRNGs is evaluated using the NIST test suite. Next, an architecture to implement the PUF in the RRAM crossbar is presented. The initial entropy source for the PUF is used from TRNGs, and challenge-response pairs (CRPs) are collected. The proposed PUF exploits the device variations and sneak-path current to produce unique CRPs. We demonstrate, through extensive experiments, reliability of 100%, uniqueness of 47.78%, uniformity of 49.79%, and bit-aliasing of 48.57% without any post-processing techniques. Finally, the design is compared with the literature to evaluate its implementation efficiency, which is clearly found to be superior to the state-of-the-art., Comment: To appear at ASP-DAC 2023

This paper proposes a 3-input arbiter-based novel physically unclonable function (PUF) design. Firstly, a 3-input priority arbiter is designed using a simple arbiter, two multiplexers (2:1), and an XOR logic gate. The priority arbiter has an equal probability of 0's and 1's at the output, which results in excellent uniformity (49.45%) while retrieving the PUF response. Secondly, a new PUF design based on priority arbiter PUF (PA-PUF) is presented. The PA-PUF design is evaluated for uniqueness, non-linearity, and uniformity against the standard tests. The proposed PA-PUF design is configurable in challenge-response pairs through an arbitrary number of feed-forward priority arbiters introduced to the design. We demonstrate, through extensive experiments, reliability of 100% after performing the error correction techniques and uniqueness of 49.63%. Finally, the design is compared with the literature to evaluate its implementation efficiency, where it is clearly found to be superior compared to the state-of-the-art.

We investigate the physical origin of nonlinear damping due to mode coupling between several auto-oscillatory modes driven by spin-orbit torque in constricted Py/Pt heterostructures by examining the dependence of auto-oscillation on temperature and applied field orientation. We observe a transition in the nonlinear damping of the auto-oscillation modes extracted from the total oscillation power as a function of drive current, which coincides with the onset of power redistribution amongst several modes and the crossover from linewidth narrowing to linewidth broadening in all individual modes. This indicates the activation of another relaxation process by nonlinear magnon-magnon scattering within the modes. We also find that both nonlinear damping and threshold current in the mode-interaction damping regime at high drive current after transition are temperature independent, suggesting that the mode coupling occurs dominantly through a non-thermal magnon scattering process via a dipole or exchange interaction rather than thermally excited magnon-mediated scattering. This finding presents a promising pathway to overcome the current limitations of efficiently controlling the interaction between two highly nonlinear magnetic oscillators to prevent mode crosstalk or inter-mode energy transfer and deepens understanding of complex nonlinear spin dynamics in multimode spin wave systems., Comment: 13 pages, 15 figures

A mismatch of atomic registries between single-layer transition metal dichalcogenides (TMDs) in a two dimensional van der Waals heterostructure produces a moir\'e superlattice with a periodic potential, which can be fine-tuned by introducing a twist angle between the materials. This approach is promising both for controlling the interactions between the TMDs and for engineering their electronic band structures, yet direct observation of the changes to the electronic structure introduced with varying twist angle has so far been missing. Here, we probe heterobilayers comprised of single-layer MoS$_2$ and WS$_2$ with twist angles of $(2.0 \pm 0.5)^{\circ}$, $(13.0 \pm 0.5)^{\circ}$, and $(20.0 \pm 0.5)^{\circ}$ and investigate the differences in their electronic band structure using micro-focused angle-resolved photoemission spectroscopy. We find strong interlayer hybridization between MoS$_2$ and WS$_2$ electronic states at the $\bar{\mathrm{\Gamma}}$-point of the Brillouin zone, leading to a transition from a direct bandgap in the single-layer to an indirect gap in the heterostructure. Replicas of the hybridized states are observed at the centre of twist angle-dependent moir\'e mini Brillouin zones. We confirm that these replica features arise from the inherent moir\'e potential by comparing our experimental observations with density functional theory calculations of the superlattice dispersion. Our direct visualization of these features underscores the potential of using twisted heterobilayer semiconductors to engineer hybrid electronic states and superlattices that alter the electronic and optical properties of 2D heterostructures., Comment: 31 pages, 6 figures in the main text and 5 figures in the supporting information

Spin-orbit torque (SOT) driven deterministic control of the magnetization state of a magnet with perpendicular magnetic anisotropy (PMA) is key to next generation spintronic applications including non-volatile, ultrafast, and energy efficient data storage devices. But, field-free deterministic switching of perpendicular magnetization remains a challenge because it requires an out-of-plane anti-damping torque, which is not allowed in conventional spin source materials such as heavy metals (HM) and topological insulators due to the system's symmetry. The exploitation of low-crystal symmetries in emergent quantum materials offers a unique approach to achieve SOTs with unconventional forms. Here, we report the first experimental realization of field-free deterministic magnetic switching of a perpendicularly polarized van der Waals (vdW) magnet employing an out-of-plane anti-damping SOT generated in layered WTe2 which is a low-crystal symmetry quantum material. The numerical simulations confirm that out-of-plane antidamping torque in WTe2 is responsible for the observed magnetization switching in the perpendicular direction.

There are many applications of Generative Adversarial Networks (GANs) in fields like computer vision, natural language processing, speech synthesis, and more. Undoubtedly the most notable results have been in the area of image synthesis and in particular in the generation of deepfake videos. While deepfakes have received much negative media coverage, they can be a useful technology in applications like entertainment, customer relations, or even assistive care. One problem with generating deepfakes is the requirement for a lot of image training data of the subject which is not an issue if the subject is a celebrity for whom many images already exist. If there are only a small number of training images then the quality of the deepfake will be poor. Some media reports have indicated that a good deepfake can be produced with as few as 500 images but in practice, quality deepfakes require many thousands of images, one of the reasons why deepfakes of celebrities and politicians have become so popular. In this study, we exploit the property of a GAN to produce images of an individual with variable facial expressions which we then use to generate a deepfake. We observe that with such variability in facial expressions of synthetic GAN-generated training images and a reduced quantity of them, we can produce a near-realistic deepfake videos., Comment: 13 pages, 6 figures, 2 tables, appears in Proceedings of 28th Irish Conference on Artificial Intelligence and Cognitive Science AICS2020, December 2020

The possibility of triggering correlated phenomena by placing a singularity of the density of states near the Fermi energy remains an intriguing avenue towards engineering the properties of quantum materials. Twisted bilayer graphene is a key material in this regard because the superlattice produced by the rotated graphene layers introduces a van Hove singularity and flat bands near the Fermi energy that cause the emergence of numerous correlated phases, including superconductivity. While the twist angle-dependence of these properties has been explored, direct demonstration of electrostatic control of the superlattice bands over a wide energy range has, so far, been critically missing. This work examines a functional twisted bilayer graphene device using in-operando angle-resolved photoemission with a nano-focused light spot. A twist angle of 12.2$^{\circ}$ is selected such that the superlattice Brillouin zone is sufficiently large to enable identification of van Hove singularities and flat band segments in momentum space. The doping dependence of these features is extracted over an energy range of 0.4 eV, expanding the combinations of twist angle and doping where they can be placed at the Fermi energy and thereby induce new correlated electronic phases in twisted bilayer graphene., Comment: 16 pages, 4 figures. A revised version of the manuscript has been accepted for publication in Advanced Materials

The presence of an electrical transport current in a material is one of the simplest and most important realisations of non-equilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves [1], insulator-to-metal transitions [2,3] or gap openings in topologically protected states [4]. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid's electronic, optical and chemical properties. Here we show that angle-resolved photoemission spectroscopy with a nano-scale light spot (nanoARPES) provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local non-equilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows non-invasive local measurements of the composition, structure, many-body effects and carrier mobility in the presence of high current densities., Comment: 9 pages, 8 figures

Integrating the carrier tunability of a functional two-dimensional material electronic device with a direct probe of energy- and momentum-resolved electronic excitations is essential to gain insights on how many-body interactions are influenced during device operation. Here, we use micro-focused angle-resolved photoemission in order to analyze many-body interactions in back-gated graphene supported on hexagonal boron nitride. By extracting the doping-dependent quasiparticle dispersion and self-energy, we observe how these interactions renormalize the Dirac cone and impact the electron mobility of our device. Our results are not only limited to a finite energy range around the Fermi level, as in electron transport measurements, but describe interactions on a much wider energy scale, extending beyond the regime of hot carrier excitations., Comment: 6 pages, 3 figures