1. Epitaxy-distorted spin-orbit Mott insulator in Sr2IrO4 thin films
- Author
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Serrao, C. Rayan, Liu, Jian, Heron, J. T., Singh-Bhalla, G., Yadav, A., Suresha, S. J., Paull, R. J., Yi, D., Chu, J. -H., Trassin, M., Vishwanath, A., Arenholz, E., Frontera, C., Železný, J., Jungwirth, T., Marti, X., and Ramesh, R.
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Condensed Matter - Materials Science - Abstract
High quality epitaxial thin films of Jeff=1/2 Mott insulator Sr2IrO4 with increasing in-plane tensile strain have been grown on top of SrTiO3(001) substrates. Increasing the in-plane tensile strain up to ~0.3% was observed to drop the c/a tetragonality by 1.2 %. X-ray absorption spectroscopy detected a strong reduction of the linear dichroism upon increasing in-plane tensile strain towards a reduced anisotropy in the local electronic structure. While the most relaxed thin film shows a consistent dependence with previously reported single crystal bulk measurements, electrical transport reveals a charge gap reduction from 200 meV down to 50 meV for the thinnest and most epitaxy-distorted film. We argue that the reduced tetragonality plays a major role in the change of the electronic structure, which is reflected in the change of the transport properties. Our work opens the possibility for exploiting epitaxial strain as a tool for both structural and functional manipulation of spin-orbit Mott systems.
- Published
- 2012
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