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Abstract: We report a method for inkjet-printing an organic semiconductor layer on top of the electrolyte insulator layer in polyelectrolyte-gated OFETs by using a surface modification treatment to overcome the underlying wettability problem at this interface. The method includes depositing an amphiphilic diblock copolymer (P3HT-b-PDMAEMA). This material is designed to have one set of blocks that mimics the hydrophobic properties of the semiconductor (poly(3-hexylthiophene) or P3HT), while the other set of blocks include polar components that improve adhesion to the polyelectrolyte insulator. Contact angle measurements, atomic force microscopy, and X-ray photoelectron spectroscopy confirm formation of the desired surface modification film. Successful inkjet printing of a smooth semiconductor layer allows us to manufacture complete transistor structures that exhibit low-voltage operation in the range of 1V. [Copyright &y& Elsevier]

Polyelectrolytes are promising electronicallyinsulating layers for low-voltage organic field effect transistors.However, the polyelectrolyte–semiconductor interface is difficultto manufacture due to challenges in wettability. We introduce an amphiphilicsemiconducting copolymer which, when spread as a thin film, can changeits surface from hydrophobic to hydrophilic upon exposure to water.This peculiar wettability is exploited in the fabrication of polyelectrolyte-gatedfield-effect transistors operating below 0.5 V. The prepared amphiphilicsemiconducting copolymer is based on a hydrophobic regioregular poly(3-hexylthiophene)(P3HT) covalently linked to a hydrophilic poly(sulfonated)-based randomblock. Such a copolymer is obtained in a three-step strategy combiningGrignard metathesis (GRIM), atom transfer radical polymerization (ATRP)processes, and a postmodification method. The structure of the diblockcopolymer was characterized using FT-IR, 1H NMR spectroscopy,and gel permeation chromatography (GPC). [ABSTRACT FROM AUTHOR]