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The charge transport and noise properties of three terminal, gated devices containing multiple single-wall metallic and semiconducting carbon nanotubes were measured at room temperature. Applying a high voltage pulsed bias at the drain terminal the metallic tubes were ablated sequentially, enabling the separation of measured conductance and 1/f noise into metallic and semiconducting nanotube contributions. The relative low frequency excess noise of the metallic tubes was observed to be two orders of magnitude lower than that of the semiconductor tubes. [ABSTRACT FROM AUTHOR]

The low frequency noise of single-walled carbon nanotubes is studied over the 77–300 K temperature range. Lorentzian shaped spectra along with 1/f noise spectra have been observed. From the Lorentzian noise components, a range of thermal activation energies from 0.08 to 0.51 eV for the associated fluctuation mechanisms is obtained. From the 1/f noise spectra, a distribution of activation energies of fluctuation processes ranging from 0.2 to 0.7 eV is derived. These findings indicate that the observed noise spectra are caused by number fluctuations. [ABSTRACT FROM AUTHOR]

The charge transport and noise properties of three terminal, gated devices containing multiple single-wall metallic and semiconducting carbon nanotubes are measured at room temperature. The calculation of conductance and relative excess noise factors of semiconductor and metallic tubes shows that both produce 1/f like excess noise.