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5. High dose gamma irradiation effects on properties of active layers in ZnO thin film transistors

7. On the anomaly in the electrical characteristics of thin film transistors with multi-layered sol-gel processed ZnO

14. Time-Resolved Photocurrent Spectroscopic Diagnostics of Electrically Active Defects in AlGaN/GaN High Electron Mobility Transistor (HEMT) Structure Grown on Si Wafers

16. Erratum: “Depth-resolved ultra-violet spectroscopic photo current-voltage measurements for the analysis of AlGaN/GaN high electron mobility transistor epilayer deposited on Si” [Appl. Phys. Lett. 105, 172105 (2014)]

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