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Copyright of Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials is the property of MIDEM Society and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

A study investigated the properties of three-terminal, three-color a-SiC:H/a-Si:H-based TCO/PINIP/TCO/PIN/metal detector assemblies with a focus on the optical and transient behavior organization. Different TCO/PINIP/TCO/PIN/metal detector assemblies featuring different TCO surface properties were compared in terms of steady-state properties, advantages and disadvantages. Experimental methodology, results and conclusions are discussed.

A study was conducted to analyze the role of a thin microcrystalline p(mu-c-Si:H) layer in a p-i-n hydrogenated amorphous silicon based solar cell. The band gap was examined using internal photoemission measurements. The effects of the double window layer on solar cell performance was also investigated in the study. Results indicated that the i(a-SiC:H) buffer layer significantly enhanced the performance of solar cells. Findings also showed that the buffer layer influences the cell's fill factor.

Photocurrent measurements of the transient phenomena in amorphous silicon devices are obtained using the program TRansient Amorphous DEvice Simulator. This program evaluates variables such as light intensity and temperature dependence of the secondary photocurrent. Numerical analysis shows that higher illumination levels and higher temperatures result to faster transients.

Copyright of Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials is the property of MIDEM Society and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

In amorphous/crystalline silicon heterojunction solar cells, optical losses can be mitigated by replacing the amorphous silicon films by wider bandgap amorphous silicon oxide layers. In this article, we use stacks of intrinsic amorphous silicon and amorphous silicon oxide as front intrinsic buffer layers and show that this increases the short-circuit current density by up to 0.43 mA/cm² due to less reflection and a higher transparency at short wavelengths. Additionally, high open-circuit voltages can be maintained, thanks to good interface passivation. However, we find that the gain in current is more than offset by losses in fill factor. Aided by device simulations, we link these losses to impeded carrier collection fundamentally caused by the increased valence band offset at the amorphous/crystalline interface. Despite this, carrier extraction can be improved by raising the temperature; we find that cells with amorphous silicon oxide window layers show an even lower temperature coefficient than reference heterojunction solar cells (-0.1%/°C relative drop in efficiency, compared to -0.3%/°C). Hence, even though cells with oxide layers do not outperform cells with the standard design at room temperature, at higher temperatures--which are closer to the real working conditions encountered in the field--they show superior performance in both experiment and simulation. [ABSTRACT FROM AUTHOR]

Copyright of Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials is the property of MIDEM Society and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

Examines the band-gap engineering in CdS/Cu(In,Ga)Se[sub2] (CIGS) solar cells using a numerical device simulation program. Simulation model description; Discussion on band-gap engineering in CIGS base structure; Analysis of two grading concepts.