438 results on '"Sobolev, M."'
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2. Defects with Deep Levels in High-Voltage Gradual p–i–n Heterojunctions AlGaAsSb/GaAs
3. Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs
4. Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice
5. Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption
6. Comparative Analysis of Interchannel Relationships on Electroencephalograms in Healthy People and Patients with Depression Using the Method of Correlation Ratios
7. Sources of Terahertz Radiation on AlGaAs/GaAs Superlattices
8. Effect of Neutron Irradiation on the Spectrum of Deep-Level Defects in GaAs Grown by Liquid-Phase Epitaxy in a Hydrogen and Argon Atmosphere
9. Influence of the Initial Roughness of the Antifriction Carbon Plastic Surface on Tribotechnical Characteristics and Efficiency of the Running-in Coating
10. High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source
11. Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy
12. Capacitance Spectroscopy of Heteroepitaxial AlGaAs/GaAs p–i–n Structures
13. Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy
14. Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
15. Impact of the Percolation Effect on the Temperature Dependences of the Capacitance–Voltage Characteristics of Heterostructures Based on Composite Layers of Silicon and Gold Nanoparticles
16. On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
17. Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
18. Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers
19. Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
20. Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
21. Tribolical Study of Cermet Coatings Al–Sn–Zn–Al2O3 for Friction Couples
22. Identification of the Dynamics of a Moving Object with the Use of Neural Networks
23. Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
24. Spatial and Quantum Confinement of Si Nanoparticles Deposited by Laser Electrodispersion onto Crystalline Si
25. Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers
26. Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2-2.6 um
27. Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
28. Deep-level defects in high-voltage AlGaAs p–i–n diodes and the effect of these defects on the temperature dependence of the minority carrier lifetime.
29. Strategy for Handling Spent BN-350 Cesium Traps in the Republic of Kazakhstan
30. Investigations of Nanoscale Columnar Al x Ga 1-x N/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface.
31. Decentralized control of quadrotors in a leader–follower formation
32. Dynamic Error of Piezoelectric Impact Accelerometers Attached to Elastic Gaskets
33. Study of deep levels in GaAs p–i–n structures
34. GaAs/InGaAsN heterostructures for multi-junction solar cells
35. P2.17B.03 Improving Lung Cancer Screening Utilization and Efficiency Through a Patient-Centered Pathway with Virtual Visits
36. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
37. Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice
38. Protection of the Piezoelectric Element of a Shock Acceleration Sensor Against Foreign Actions
39. Robust leader–follower formation control of mobile robots by the structural synthesis method
40. MBE growth of GaP on a Si substrate
41. Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy
42. Exposure to Lead and Its Effect on Childrens’ Health in Belovo (Metallurgical Plant)
43. Mercury Values in Urine from Inhabitants of St. Petersburg
44. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
45. Influence of GaAs spacer-layer thickness on quantum coupling and optical polarization in a ten-layer system of vertically correlated InAs/GaAs quantum dots
46. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
47. The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
48. Deep level defects in GaAs gradual p-i-n junctions after neutron irradiation
49. Creation of effective sources of white radiation based on GaP(As,N) on silicon substrates
50. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
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