46 results on '"Sobolev, M. S."'
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2. Study of Active Regions Based on Multiperiod GaAsN/InAs Superlattice
3. Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption
4. Sources of Terahertz Radiation on AlGaAs/GaAs Superlattices
5. High-Precision Characterization of Super-Multiperiod AlGaAs/GaAs Superlattices Using X-Ray Reflectometry on a Synchrotron Source
6. Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy
7. Matched X-Ray Reflectometry and Diffractometry of Super-Multiperiod Heterostructures Grown by Molecular Beam Epitaxy
8. Photoluminescence and Transmission Electron Microscopy Methods for Characterization of Super-Multiperiod A3B5 Quantum Well Structures
9. Investigations of Nanoscale Columnar AlxGa1-xN/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface
10. On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
11. Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Substrates and SiC/Si(111) Epitaxial Layers
12. Heteroepitaxy of GaP Nucleation Layers on Si by Molecular Beam Epitaxy
13. Features of the Initial Stage of GaN Growth on Si(111) Substrates by Nitrogen-Plasma-Assisted Molecular-Beam Epitaxy
14. Investigations of Nanoscale Columnar Al x Ga 1-x N/AlN Heterostructures Grown on Silicon Substrates with Different Modifications of the Surface.
15. Growth of GaN Layers on Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy
16. Molecular beam epitaxy of metamorphic buffer for InGaAs/InP photodetectors with high photosensitivity in the range of 2.2-2.6 um
17. Study of semi-polar gallium nitride grown on m-sapphire by chloride vapor-phase epitaxy
18. GaAs/InGaAsN heterostructures for multi-junction solar cells
19. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy
20. MBE growth of GaP on a Si substrate
21. Photoluminescence of heterostructures with GaP1 − x N x and GaP1 − x − y N x As y layers grown on GaP and Si substrates by molecular-beam epitaxy
22. Creation of effective sources of white radiation based on GaP(As,N) on silicon substrates
23. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics
24. The influence of an In0.52Al0.48As transition layer design on the transport characteristics of a metamorphic high-electron-mobility transistor
25. Ultra-wide electroluminescence spectrum of LED heterostructures based on GaPAsN semiconductor alloys
26. Molecular beam epitaxy of GaPN, GaPAsN, and InGaPN nitride solid solutions
27. Electroluminescence of GaP x N y As1 − x − y nanoheterostructures through a transparent electrode made of CVD graphene
28. Optical properties of quantum-confined heterostructures based on GaP x N y As1 − x − y alloys
29. Dependence of the hybridization parameter on nitrogen molar fraction in nitrogen-containing GaPN solid solutions
30. Study of active regions based on multiperiod GaAsN/InAs superlattice
31. Changes in the electronic properties of the GaN/Si(111) surface under Li adsorption
32. Influence of rapid thermal annealing on the distribution of nitrogen atoms in GaAsN/GaAs
33. Preparation of Si substrates for monolithic integration of III−V quantum dots by selective MBE growth
34. Optical properties of GaN x As y P1−x−y semiconductor quaternary solid solutions
35. Monolith GaAsP/Si dual-junction solar cells grown by MBE
36. Pharmacological correction of experimental osteoporosis and fractures related to it by means of rosuvastatin, L-norvaline and their combination
37. Doping of GaP layers grown by molecular-beam epitaxy on silicon substrates
38. Study of Endothelio- and Osteoprotective Effects of Combination of Rosuvastatin with L-Norvaline in Experiment
39. Deep X-Ray Reflectometry of Supermultiperiod A3B5 Structures with Quantum Wells Grown by Molecular-Beam Epitaxy.
40. Preparation of a silicon surface for subsequent growth of dilute nitride alloys by molecular-beam epitaxy
41. Epitaxial growth and investigation of GaP/GaP(As)N heterostructures on Si (100) 40 substrates
42. The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
43. STUDY OF ENDOTHELIAL PROTECTIVE AND OSTEOPROTECTIVE PROPERTIES OF ROSUVASTATIN, L-NORVALINE AND THEIR COMBINATIONS IN EXPERIMENTAL OSTEOPOROSIS
44. On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates.
45. Pharmacological correction of experimental osteoporosis and fractures related to it by means of rosuvastatin, L-norvaline and their combination
46. Study of endothelio- and osteoprotective effects of combination of rosuvastatin with L-norvaline in experiment
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