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225 results on '"Sokolov, N. S."'

4. Deep Earth Anchor ERT

Author

Sokolov, N. S., Fedorov, P. Yu., di Prisco, Marco, Series Editor, Chen, Sheng-Hong, Series Editor, Vayas, Ioannis, Series Editor, Kumar Shukla, Sanjay, Series Editor, Sharma, Anuj, Series Editor, Kumar, Nagesh, Series Editor, Wang, Chien Ming, Series Editor, Vatin, Nikolai I., editor, Tamrazyan, Ashot G., editor, Plotnikov, Alexey N., editor, Leonovich, Sergei N., editor, Pakrastins, Leonids, editor, and Rakhmonzoda, Ahmadjon, editor

Published
2022
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5. Optimum Type of Depth Constructions in Insulated Soils

Author

Sokolov, N. S., di Prisco, Marco, Series Editor, Chen, Sheng-Hong, Series Editor, Vayas, Ioannis, Series Editor, Kumar Shukla, Sanjay, Series Editor, Sharma, Anuj, Series Editor, Kumar, Nagesh, Series Editor, Wang, Chien Ming, Series Editor, Vatin, Nikolai I., editor, Tamrazyan, Ashot G., editor, Plotnikov, Alexey N., editor, Leonovich, Sergei N., editor, Pakrastins, Leonids, editor, and Rakhmonzoda, Ahmadjon, editor

Published
2022
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6. More About the Possibilities of the ERT Injection Piles

Author

Sokolov, N. S., di Prisco, Marco, Series Editor, Chen, Sheng-Hong, Series Editor, Vayas, Ioannis, Series Editor, Kumar Shukla, Sanjay, Series Editor, Sharma, Anuj, Series Editor, Kumar, Nagesh, Series Editor, Wang, Chien Ming, Series Editor, Vatin, Nikolai I., editor, Tamrazyan, Ashot G., editor, Plotnikov, Alexey N., editor, Leonovich, Sergei N., editor, Pakrastins, Leonids, editor, and Rakhmonzoda, Ahmadjon, editor

Published
2022
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10. Substrate induced magnetic anisotropies and magneto-optical response in YIG nanosized epitaxial films on NdGG(111)

Author

Krichevtsov, B. B., Bursian, V. E., Gastev, S. V., Korovin, A. M., Lutsev, L. V., Suturin, S. M., Mashkov, K. V., Volkov, M. P., and Sokolov, N. S.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science
Abstract

Nanosized Y3Fe5O12 epitaxial films have been grown on Nd3Ga5O12 substrates using laser molecular beam epitaxy method. Magneto-optical polar Kerr effect, ferromagnetic resonance and spin wave propagation measurements show that the stress-related anisotropy field has an opposite sign, compared to that in the YIG/GGG systems. This leads to a considerable decrease of the effective magnetization that opens a perspective to get YIG films with perpendicular magnetization for utilizing forward volume spin waves. Longitudinal magnetooptical Kerr effect magnetometry reveals a large contribution of quadratic in magnetization terms into dielectric permittivity tensor at optical frequencies. This effect strongly increases with temperature decrease and is explained by magnetization of the interface Nd3+ ions that are exchange coupled to the Fe3+ ions., Comment: 10 pages, 4 figures

Published
2018

11. Role of gallium diffusion in the formation of a magnetically dead layer at Y3Fe5O12 / Gd3Ga5O12 epitaxial interface

Author

Suturin, S. M., Korovin, A. M., Bursian, V. E., Lutsev, L. V., Bourobina, V., Yakovlev, N. L., Montecchi, M., Pasquali, L., Ukleev, V., Vorobiev, A., Devishvili, A., and Sokolov, N. S.

Subjects
Condensed Matter - Materials Science
Abstract

We have clarified the origin of magnetically dead interface layer formed in yttrium iron garnet (YIG) films grown at above 700{\deg}C onto gadolinium gallium garnet (GGG) substrate by means of laser molecular beam epitaxy. The diffusion-assisted formation of a Ga-rich region at the YIG / GGG interface is demonstrated by means of composition depth profiling performed by X-ray photoelectron spectroscopy, secondary ion mass spectroscopy and X-ray and neutron reflectometry. Our finding is in sharp contrast to the earlier expressed assumption that Gd acts as a migrant element in the YIG/GGG system. We further correlate the presence of Ga-rich transition layer with considerable quenching of ferromagnetic resonance and spin wave propagation in thin YIG films. Finally, we clarify the origin of the enigmatic low-density overlayer that is often observed in neutron and X-ray reflectometry studies of the YIG / GGG epitaxial system., Comment: 19 pages, 8 figures

Published
2018
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12. Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3

Author

Kaveev, A. K., Sokolov, N. S., Suturin, S. M., Zhiltsov, N. S., Golyashov, V. A., Tereshchenko, O. E., Prosvirin, I. P., Kokh, K. A., and Sawada, M.

Subjects
Condensed Matter - Materials Science
Abstract

Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on Bi2Se3(001) at RT using high-temperature seeding layer. Therefore, structurally ordered ferromagnetic thin films were obtained on the topological insulator surface for the first time. Using high energy electron diffraction (RHEED) 3D reciprocal space mapping, epitaxial relations of main crystallographic axes for the CoFeB/ Bi2Te3 heterostructure were revealed. MOKE and AFM measurements showed the isotropic azimuthal in-plane behavior of magnetization vector in CoFeB/ Bi2Te3, in contrast to 2nd order magnetic anisotropy seen in CoFeB/Bi2Se3. XPS measurements showed more stable behavior of CoFeB grown on Bi2Te3 to the oxidation, in compare to CoFeB grown on Bi2Se3. XAS and XMCD measurements of both concerned nanostructures allowed calculation of spin and orbital magnetic moments for Co and Fe. Additionally, crystalline structure and XMCD response of the CoFeB/BiTeI and Co55Fe45/BiTeI systems were studied, epitaxial relations of main crystallographic axes were found, and spin and orbital magnetic moments were calculated., Comment: 9 pages, 12 figures, 1 table

Published
2018

13. Use of Weak Foundations in the Construction of Highways

Author

Sokolov, N. S., Fedorov, P. Yu., di Prisco, Marco, Series Editor, Chen, Sheng-Hong, Series Editor, Vayas, Ioannis, Series Editor, Kumar Shukla, Sanjay, Series Editor, Sharma, Anuj, Series Editor, Kumar, Nagesh, Series Editor, Wang, Chien Ming, Series Editor, Klyuev, Sergey Vasil'yevich, editor, and Klyuev, Alexander Vasil'yevich, editor

Published
2021
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22. Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators.

Author

Illarionov, Yu. Yu., Knobloch, T., Uzlu, B., Banshchikov, A. G., Ivanov, I. A., Sverdlov, V., Otto, M., Stoll, S. L., Vexler, M. I., Waltl, M., Wang, Z., Manna, B., Neumaier, D., Lemme, M. C., Sokolov, N. S., and Grasser, T.

Subjects
FIELD-effect transistors, GRAPHENE, HIGH temperatures, SURFACE roughness, ELECTRIC fields
Abstract

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stability. Previously used amorphous oxides, such as SiO2 and Al2O3, however, typically suffer from oxide dangling bonds at the interface, high surface roughness and numerous border oxide traps. In order to address these challenges, here we use 2 nm thick epitaxial CaF2 as a gate insulator in GFETs. By analyzing device-to-device variability for about 200 devices fabricated in two batches, we find that tens of them show similar gate transfer characteristics. Our statistical analysis of the hysteresis up to 175oC has revealed that while an ambient-sensitive counterclockwise hysteresis can be present in some devices, the dominant mechanism is thermally activated charge trapping by border defects in CaF2 which results in the conventional clockwise hysteresis. We demonstrate that both the hysteresis and bias-temperature instabilities in our GFETs with CaF2 are comparable to similar devices with SiO2 and Al2O3. In particular, we achieve a small hysteresis below 0.01 V for equivalent oxide thickness (EOT) of about 1 nm at the electric fields up to 15 MV cm−1 and sweep times in the kilosecond range. Thus, our results demonstrate that crystalline CaF2 is a promising insulator for highly-stable GFETs. [ABSTRACT FROM AUTHOR]

Published
2024
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39. Calcium fluoride films with 2-10 nm thickness on Silicon-(111): growth, diagnostics, study of the through current transport

Author

null Suturin S. M., null Sokolov N. S., null Illarionov Yu. Yu., null Ivanov I.A., null Vexler M. I., and null Banshchikov A. G.

Abstract

Epitaxial calcium fluoride (CaF2) layers with a nominal thickness up to 10 nm on the (111)-oriented Silicon (Si) are obtained. Surface topographies of the fluoride films are recorded and the current-voltage characteristics of the Au/CaF2/Si structures are studied. On a qualitative level, these structures exhibited all the features usual for metal-insulator-semiconductor systems. The current-voltage curves of the samples were reproduced by modeling considering a finite (0.1-1 nm) value of the standard thickness deviation of the dielectric CaF2 film. Keywords: calcium fluoride, thin films, MIS structure, leakage current.

Published
2022
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