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In this study, we report the epitaxial growth of a series of {\alpha}-Sn films on InSb substrate by molecular beam epitaxy (MBE) with thickness varying from 10 nm to 400 nm. High qualities of the {\alpha}-Sn films are confirmed. An enhanced large magnetoresistance (MR) over 450,000% has been observed compared to that of the bare InSb substrate. Thickness, angle and temperature dependent MR are used to demonstrate the effects of {\alpha}-Sn films on the electrical transport properties., Comment: 24 pages, 5 figures

Gray tin, also known as {\alpha}-Sn, has been attracting research interest recent years due to its topological nontrivial properties predicted theoretically. The Dirac linear band dispersion has been proved experimentally by angle resolved photoemission spectroscopy. We have grown a series of {\alpha}-Sn thin film samples in two types with different substrates and thicknesses by molecular beam epitaxy. To explore the possible exotic physical properties related to the topological band structures, we have measured the electrical transport properties of our {\alpha}-Sn thin film samples and observed multiple superconducting transitions. We have identified the transitions above 4.5 K, besides the transition maybe related to the \b{eta} phase around 3.7 K. The changes of the superconducting properties over time reflect the aging effects in our samples. We have also confirmed the strain effects on the superconducting transitions through altering the relative thickness of our samples., Comment: 12 pages, 5 figures

Exploring new topological materials with large topological nontrivial bandgaps and simple composition is attractive for both theoretical investigation and experimental realization. Recently alpha tin ({\alpha}-Sn) has been predicted to be such a candidate and it can be tuned to be either a topological insulator or a Dirac semimetal by applying appropriate strain. However, free-standing {\alpha}-Sn is only stable below 13.2 {\deg}C. In this study, a series of high-quality {\alpha}-Sn films with different thicknesses have been successfully grown on InSb substrates by molecular beam epitaxy (MBE). Confirmed by both X-ray diffraction (XRD) and reciprocal space mapping (RSM), all the films remained fully strained up to 4000 {\AA}, proving the strain effect from the substrate. Remarkably, the single-crystalline {\alpha} phase can persist up to 170 {\deg}C for the 200 {\AA} thick sample. The critical temperature where the {\alpha} phase disappears decreases as the film thickness increases, showing the thermal stabilization can be engineered by varying the {\alpha}-Sn thickness. A plastic flow model taking the work hardening into account is introduced to explain this dependence, assuming the strain relaxation and the phase transition occur successively. This enhanced thermal stability is prerequisite for above room-temperature characterization and application of this material system., Comment: 21 pages, 4 figures, 1 table