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Artificial nociceptors, mimicking human-like stimuli perception, are of significance for intelligent robotics to work in hazardous and dynamic scenarios. One of the most essential characteristics of the human nociceptor is its self-adjustable attribute, which indicates that the threshold of determination of a potentially hazardous stimulus relies on environmental knowledge. This critical attribute has been currently omitted, but it is highly desired for artificial nociceptors. Inspired by these shortcomings, this article presents, for the first time, a Self-Directed Channel (SDC) memristor-based self-reconfigurable nociceptor, capable of perceiving hazardous pressure stimuli under different temperatures and demonstrates key features of tactile nociceptors, including 'threshold,' 'no-adaptation,' and 'sensitization.' The maximum amplification of hazardous external stimuli is 1000%, and its response characteristics dynamically adapt to current temperature conditions by automatically altering the generated modulation schemes for the memristor. The maximum difference ratio of the response of memristors at different temperatures is 500%, and this adaptability closely mimics the functions of biological tactile nociceptors, resulting in accurate danger perception in various conditions. Beyond temperature adaptation, this memristor-based nociceptor has the potential to integrate different sensory modalities by applying various sensors, thereby achieving human-like perception capabilities in real-world environments., Comment: 14 pages, 4 figures

True random numbers are essential for scientific research and various engineering problems. Their generation, however, depends on a reliable entropy source. Here, we present true random number generation using the conductance noise probed from structurally metastable 1T' MoTe2 prepared via electrochemical exfoliation. The noise, fitting a Poisson process, is a robust entropy source capable of remaining stable even at 15 K. Noise spectral density and statistical time-lag suggest the noise originates from the random polarization of the ferroelectric dipoles in 1T' MoTe2. Using a simple circuit, the noise allows true random number generation, enabling their use as the seed for high-throughput secure random number generation over 1 Mbit/s, appealing for applications such as cryptography where secure data protection has now become severe. Particularly, we demonstrate safeguarding key biometric information in neural networks using the random numbers, proving a critical data privacy measure in big data and artificial intelligence.

Reservoir computing is a recurrent neural network that has been applied across various domains in machine learning. The implementation of reservoir computing, however, often demands heavy computations for activating the reservoir. Configuring physical reservoir networks and harnessing the nonlinearity from the underlying devices for activation is an emergent solution to address the computational challenge. Herein, we analyze the feasibility of employing the nonlinearity from solution-processed molybdenum disulfide (MoS2) devices for reservoir activation. The devices, fabricated using liquid-phase exfoliated MoS2, exhibit a high-order nonlinearity achieved by Stark modulation of the MoS2 material. We demonstrate that this nonlinearity can be fitted and employed as the activation function to facilitate reservoir computing implementation. Notably, owing to the high-order nonlinearity, the network exhibits long-term synchronization and robust generalization abilities for approximating complex dynamical systems. Given the remarkable reservoir activation capability, coupled with the scalability of the device fabrication, our findings open the possibility for the physical realization of lightweight, efficient reservoir computing for, for instance, signal classification, motion tracking, and pattern recognition of complex time series as well as secure cryptography. As an example, we show the network can be appointed to generate chaotic random numbers for secure data encryption.

The demand for efficient edge vision has spurred the interest in developing stochastic computing approaches for performing image processing tasks. Memristors with inherent stochasticity readily introduce probability into the computations and thus enable stochastic image processing computations. Here, we present a stochastic computing approach for edge detection, a fundamental image processing technique, facilitated with memristor-enabled stochastic logics. Specifically, we integrate the memristors with logic circuits and harness the stochasticity from the memristors to realize compact stochastic logics for stochastic number encoding and processing. The stochastic numbers, exhibiting well-regulated probabilities and correlations, can be processed to perform logic operations with statistical probabilities. This can facilitate lightweight stochastic edge detection for edge visual scenarios characterized with high-level noise errors. As a practical demonstration, we implement a hardware stochastic Roberts cross operator using the stochastic logics, and prove its exceptional edge detection performance, remarkably, with 95% less computational cost while withstanding 50% bit-flip errors. The results underscore the great potential of our stochastic edge detection approach in developing lightweight, error-tolerant edge vision hardware and systems for autonomous driving, virtual/augmented reality, medical imaging diagnosis, industrial automation, and beyond.

Solution-processed two-dimensional (2D) materials hold promise for their scalable applications. However, the random, fragmented nature of the solution-processed nanoflakes and the poor percolative conduction through their discrete networks limit the performance of the enabled devices. To overcome the problem, we report conduction modulation of the solution-processed 2D materials via the Stark effect. Using liquid-phase exfoliated molybdenum disulfide (MoS2) as an example, we demonstrate nonlinear conduction modulation with a switching ratio of >105 by the local fields from the interfacial ferroelectric P(VDF-TrFE). Through density-functional theory calculations and in situ Raman scattering and photoluminescence spectroscopic analysis, we understand the modulation arises from a charge redistribution in the solution-processed MoS2. Beyond MoS2, we show the modulation may be viable for the other solution-processed 2D materials and low-dimensional materials. The effective modulation can open their electronic device applications.