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Abstract The unique semiconducting characteristics of 2D materials, such as transition metal dichalcogenides (TMDs), have drawn significant interest in the field of electronic devices. However, the dependence of the device performance on the electrical properties of electrochemically exfoliated TMD nanoflakes remains unclear. In this study, the intrinsic electrical properties of diverse electrochemically exfoliated TMD nanoflakes are investigated and their applications in fully solution‐processed 2D electronics are explored. The study reveals that MoSe2 and WS2 nanoflakes are suitable candidates with moderate electron concentrations of 5.7 × 1012 and 2.5 × 1012 cm−2, respectively. These moderate electron concentrations enable a low off‐state current and high on‐state current, leading to a large on–off ratio (> 106) for the fabricated transistors. Furthermore, moderate annealing can increase the mobility by one order of magnitude by reducing the contact resistance and improving charge transport. Additionally, the trap density is significantly reduced, leading to an improved stability. Finally, fully solution‐processed 2D complementary inverters with a high voltage gain of 60 are demonstrated. This study contributes to a growing understanding of the properties of 2D materials in terms of transistor performances and promotes the development of solution‐processed devices applicable in next‐generation electronics.

Here, we report the fabrication of high-performance printable WSe2 transistors via the doping of p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based printable electronics.

Abstract Tin (Sn2+)‐based halide perovskites have been developed as the most promising alternatives to their toxic Pb‐based counterparts in optoelectronic devices. However, the facile tin vacancy formation and easy oxidization characteristics make Sn2+‐based perovskites highly p‐doped with excessive hole concentrations, which significantly hinder their applications. Herein, we demonstrate a potent hole inhibitor of antimony fluoride (SbF3), which possesses a higher hole‐suppression capability than conventional tin fluoride (SnF2). A small amount of SbF3 allows a wide range of hole‐density modulation with no or less SnF2 addition, thus mitigating the negative effects of using only SnF2. A SnF2/SbF3 co‐additive approach was further developed to achieve high‐performance Sn2+ perovskite thin‐film transistors operated in the enhancement mode with a five‐fold enhancement of the field‐effect mobility and improved operational stability compared to using only SnF2. We expect that the SbF3 hole suppressor and co‐additive approach can provide opportunities for the development of high‐efficiency Sn2+‐perovskite optoelectronic devices.