1,664 results on '"Speck, James S"'
Search Results
2. Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence.
3. Probing local emission properties in InGaN/GaN quantum wells by scanning tunneling luminescence microscopy
4. Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds
5. Efficiency and Forward Voltage of Blue and Green Lateral LEDs with V-shape defects and Random Alloy Fluctuation in Quantum Wells
6. Three-dimensional modeling of minority-carrier lateral diffusion length including random alloy fluctuations in (In,Ga)N and (Al,Ga)N single quantum wells
7. Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes.
8. Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics
9. Index
10. All-solid-state VUV frequency comb at 160 nm using multi-harmonic generation in a non-linear femtosecond enhancement cavity
11. Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC
12. Erratum: “Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs” [Appl. Phys. Lett. 124, 172102 (2024)]
13. Dynamics of carrier injection through V-defects in long wavelength GaN LEDs
14. Donors and Deep Acceptors in $\beta$-Ga2O3
15. Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC
16. Effect of Mg doping on carrier recombination in GaN.
17. Localization landscape theory of disorder in semiconductors. III. Application to carrier transport and recombination in light emitting diodes
18. Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers
19. Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes.
20. Carrier diffusion in long wavelength InGaN quantum well LEDs after injection through V-defects.
21. Heated-H3PO4 etching of (001) β-Ga2O3.
22. Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes
23. First Demonstration of an N-Polar InAlGaN/GaN HEMT
24. Role of V-defect density on the performance of III-nitride green LEDs on sapphire substrates
25. Structure of V-defects in long wavelength GaN-based light emitting diodes.
26. Planarization of p-GaN surfaces on MOCVD grown V-defect engineered GaN-based LEDs.
27. Disorder effects in nitride semiconductors: impact on fundamental and device properties
28. High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films
29. Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication
30. Curvature and bow of bulk GaN substrates
31. Disorder effects in nitride semiconductors: impact on fundamental and device properties
32. Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy
33. 10.6% external quantum efficiency germicidal UV LEDs grown on thin highly conductive n-AlGaN
34. Experimental evidence of hole injection through V-defects in long wavelength GaN-based LEDs
35. Vertical PtOx/Pt/ β -Ga2O3 Schottky diodes with high permittivity dielectric field plate for low leakage and high breakdown voltage
36. Carrier localization in III-nitride versus conventional III-V semiconductors: A study on the effects of alloy disorder using landscape theory and the Schrödinger equation
37. Corrigendum: Importance of shallow hydrogenic dopants and material purity of ultra-wide bandgap semiconductors for vertical power electron devices (2020 Semicond. Sci. Technol. 35 125018)
38. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop
39. Investigation of oxygen and other impurities and their effect on the transparency of a Na flux grown GaN crystal
40. High germanium doping of GaN films by ammonia molecular beam epitaxy
41. Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis.
42. In vacancies in InN grown by plasma-assisted molecular beam epitaxy
43. An exploratory study of acidic ammonothermal growth in a TZM autoclave at high temperatures
44. Origins of the high-energy electroluminescence peaks in long-wavelength (∼495–685 nm) InGaN light-emitting diodes
45. Atomic layer etching (ALE) of III-nitrides
46. First‐Principles Study of Twin Boundaries and Stacking Faults in β‐Ga2O3
47. Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown
48. High-temperature corrosion of Inconel®Alloy 718, Haynes®282®Alloy and CoWAlloy1&2 in supercritical ammonia/ammonium chloride solution
49. Low threading dislocation density aluminum nitride on silicon carbide through the use of reduced temperature interlayers
50. Growth of N-polar GaN by ammonia molecular beam epitaxy
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.