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Magnetoelectric (ME) magnetic field sensors commonly rely on one of the two modulation principles: the nonlinear dependence of magnetostrictive strain on the applied field or the stress-induced change in magnetization susceptibility. While both effects coexist in any ME device, different readout schemes can be chosen to utilize one or the other effect for magnetic field sensing. This work demonstrates that both principles can be simultaneously implemented in a single electrically modulated ME sensor with inductive readout (a converse ME sensor). This mixed modulation approach significantly enhances low-frequency sensitivity while not affecting the sensitivity at higher frequencies. This leads to a nontrivial dependency of the sensor sensitivity on the frequency of the magnetic field to be measured and can effectively decrease the sensor bandwidth by up to an order of magnitude. We show that the contribution of the modulation from the nonlinearity of the magnetostrictive strain to the sensor sensitivity can be changed by applying a magnetic bias field, offering an additional dimension to the design of ME sensors, especially for potential applications in the unshielded environment., Comment: 14 pages, 3 figures

The development of magnetic field sensors with high sensitivity is crucial for accurate detection of magnetic fields. In this context, we present a theoretical model of a highly sensitive surface acoustic wave (SAW) magnetic field sensor that utilizes phononic crystal (PnC) structures composed of Au pillars embedded within a SiO2 guiding layer. We study rectangular and triangular PnCs and assess their potential for application in thin-film magnetic field sensors. In our design, the PnC is integrated into the SiO2 guiding layer, preserving the continuous magnetostrictive layer and maximizing its interaction with the SAW. The sensor achieves nearly two orders of magnitude higher sensitivity compared to a continuous delay line of similar dimensions and an eight-fold improvement over the previous sensor design with PnCs composed of FeCoSiB pillars. The enhanced sensitivity is attributed to resonance effects within the PnC leading to an increased interaction between the SAW and the continuous FeCoSiB layer covering the PnC. Our results highlight the significant potential of incorporating PnCs into the guiding layer of SAWs for future high performance magnetic field sensors., Comment: 27 pages, 15 figures, 3 tables

Magnetoelastic composites are integral elements of sensors and actuators utilizing magnetostriction for their functionality. Their sensitivity typically scales with the saturation magnetostriction and inversely with magnetic anisotropy. However, this makes the devices prone to minuscule residual anisotropic stress from the fabrication process, impairing their performance and reproducibility, hence limiting their suitability for arrays. This study presents a shadow mask deposition technology combined with a free-free magnetoelectric microresonator design intended to minimize residual stress and inhomogeneity in the magnetoelastic layer. Resonators are experimentally and theoretically analyzed regarding local stress anisotropy, magnetic anisotropy, and the {\Delta}E effect in several resonance modes. Further, the sensitivity is analyzed in the example of {\Delta}E-effect sensors. The results demonstrate a device-to-device variation of the resonance frequency < 0.2 % with sensitivities comparable with macroscopic {\Delta}E-effect sensors. The reproducibility is drastically improved over previous magnetoelastic device arrays. This development marks a step forward in the reproducibility and homogeneity of magnetoelastic resonators and contributes to the feasibility of large-scale, integrated sensor arrays., Comment: 26 pages, 13 figures

In this work, we propose and evaluate an inexpensive and CMOS-compatible method to locally apply strain on a Si/SiOx substrate. Due to high growth temperatures and different thermal expansion coefficients, a SiN passivation layer exerts a compressive stress when deposited on a commercial silicon wafer. Removing selected areas of the passivation layer alters the strain on the micrometer range, leading to changes in the local magnetic anisotropy of a magnetic material through magnetoelastic interactions. Using Kerr microscopy, we experimentally demonstrate how the magnetoelastic energy landscape, created by a pair of openings, in a magnetic nanowire enables the creation of pinning sites for in-plane vortex walls that propagate in a magnetic racetrack. We report substantial pinning fields up to 15 mT for device-relevant ferromagnetic materials with positive magnetostriction. We support our experimental results with finite element simulations for the induced strain, micromagnetic simulations and 1D model calculations using the realistic strain profile to identify the depinning mechanism. All the observations above are due to the magnetoelastic energy contribution in the system, which creates local energy minima for the domain wall at the desired location. By controlling domain walls with strain, we realize the prototype of a true power-on magnetic sensor that can measure discrete magnetic fields or Oersted currents. This utilizes a technology that does not require piezoelectric substrates or high-resolution lithography, thus enabling wafer-level production.