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Silicon Drift Detectors (SDDs) are being developed for low energy (0.12 keV to 12 keV) X-ray spectroscopy and position sensing applications using silicon bipolar technology available with Bharat Electronics Ltd (BEL), Bangalore. As a part of this development, the first batch of proto-type SDDs have been realized through a pilot stage fabrication run at the Micro-fabrication facility at Indian Institute of Technology - Bombay (IIT-B). This paper presents a detailed view on the design; fabrication and characterization of the first prototypes of SDDs. SDDs fabricated at IIT-Bombay were characterized to extract critical dc (I-V and C-V) performance parameters like total leakage current at anode, full depletion anode capacitance and full depletion voltage. Device simulations in Technology Computer Aided Design (TCAD) were employed to extract analytical values of these performance parameters. Based on the results from characterization of proto-type SDDs developed at IIT-B, the mask layout consisting of various designs of SDDs and JFETs to be fabricated at BEL was designed. [ABSTRACT FROM AUTHOR]